KR960012535A - 불휘발성 반도체 기억장치 및 그 제조방법 - Google Patents

불휘발성 반도체 기억장치 및 그 제조방법 Download PDF

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Publication number
KR960012535A
KR960012535A KR1019950029903A KR19950029903A KR960012535A KR 960012535 A KR960012535 A KR 960012535A KR 1019950029903 A KR1019950029903 A KR 1019950029903A KR 19950029903 A KR19950029903 A KR 19950029903A KR 960012535 A KR960012535 A KR 960012535A
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KR
South Korea
Prior art keywords
manufacturing
semiconductor memory
nonvolatile semiconductor
nonvolatile
memory
Prior art date
Application number
KR1019950029903A
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English (en)
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KR100197029B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of KR960012535A publication Critical patent/KR960012535A/ko
Application granted granted Critical
Publication of KR100197029B1 publication Critical patent/KR100197029B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7887—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5612—Multilevel memory cell with more than one floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019950029903A 1994-09-13 1995-09-13 불휘발성 반도체 기억장치 및 그 제조방법 KR100197029B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6219108A JPH0883855A (ja) 1994-09-13 1994-09-13 不揮発性半導体記憶装置およびその製造方法
JP94-219108 1994-09-13

Publications (2)

Publication Number Publication Date
KR960012535A true KR960012535A (ko) 1996-04-20
KR100197029B1 KR100197029B1 (ko) 1999-06-15

Family

ID=16730386

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950029903A KR100197029B1 (ko) 1994-09-13 1995-09-13 불휘발성 반도체 기억장치 및 그 제조방법

Country Status (5)

Country Link
US (1) US5708285A (ko)
JP (1) JPH0883855A (ko)
KR (1) KR100197029B1 (ko)
DE (1) DE19533709C2 (ko)
FR (1) FR2725309B1 (ko)

Cited By (1)

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KR100350622B1 (ko) * 2000-12-22 2002-08-30 엘지전자주식회사 컬러 음극선관

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US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US7071060B1 (en) 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5900661A (en) * 1996-09-18 1999-05-04 Nippon Steel Corporation EEPROM with bit lines below word lines
TW417256B (en) * 1997-01-31 2001-01-01 Seiko Epson Corp Semiconductor MOS device and its manufacturing method
US6469343B1 (en) 1998-04-02 2002-10-22 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
US6596590B1 (en) 1997-04-25 2003-07-22 Nippon Steel Corporation Method of making multi-level type non-volatile semiconductor memory device
JP3070531B2 (ja) * 1997-06-27 2000-07-31 日本電気株式会社 不揮発性半導体記憶装置
JPH11274327A (ja) * 1998-03-23 1999-10-08 Oki Electric Ind Co Ltd 不揮発性記憶装置及び不揮発性記憶装置の製造方法
US6043530A (en) * 1998-04-15 2000-03-28 Chang; Ming-Bing Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
US6876031B1 (en) * 1999-02-23 2005-04-05 Winbond Electronics Corporation Method and apparatus for split gate source side injection flash memory cell and array with dedicated erase gates
JP2000311956A (ja) 1999-04-27 2000-11-07 Toshiba Corp 不揮発性半導体記憶装置とその製造方法
KR20010005001A (ko) * 1999-06-30 2001-01-15 김영환 플래쉬 메모리 셀의 제조 방법
US6288419B1 (en) * 1999-07-09 2001-09-11 Micron Technology, Inc. Low resistance gate flash memory
US6914819B2 (en) * 2003-09-04 2005-07-05 Macronix International Co., Ltd. Non-volatile flash memory
JP4377676B2 (ja) * 2003-12-24 2009-12-02 株式会社東芝 半導体装置およびその製造方法
KR101079872B1 (ko) * 2004-03-05 2011-11-03 매그나칩 반도체 유한회사 이이피롬 셀 및 그 제조 방법
US7046552B2 (en) * 2004-03-17 2006-05-16 Actrans System Incorporation, Usa Flash memory with enhanced program and erase coupling and process of fabricating the same
JP5039116B2 (ja) * 2009-11-24 2012-10-03 株式会社東芝 半導体記憶装置
US10312248B2 (en) 2014-11-12 2019-06-04 Silicon Storage Technology, Inc. Virtual ground non-volatile memory array
CN107210203B (zh) 2015-01-22 2020-10-16 硅存储技术公司 高密度分裂栅存储器单元
DE102017109082A1 (de) * 2017-04-27 2018-10-31 Helmholtz-Zentrum Dresden - Rossendorf E.V. Schichtanordnung, elektronisches Bauteil mit einer Schichtanordnung und Verwendung einer Schichtanordnung
US10700077B2 (en) * 2018-01-02 2020-06-30 Microchip Technology Incorporated Memory cell with a flat-topped floating gate structure
US10998325B2 (en) * 2018-12-03 2021-05-04 Silicon Storage Technology, Inc. Memory cell with floating gate, coupling gate and erase gate, and method of making same
CN114335185A (zh) 2020-09-30 2022-04-12 硅存储技术股份有限公司 具有设置在字线栅上方的擦除栅的分裂栅双位非易失性存储器单元及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100350622B1 (ko) * 2000-12-22 2002-08-30 엘지전자주식회사 컬러 음극선관

Also Published As

Publication number Publication date
KR100197029B1 (ko) 1999-06-15
DE19533709C2 (de) 2001-07-12
FR2725309B1 (fr) 1998-05-22
DE19533709A1 (de) 1996-03-14
US5708285A (en) 1998-01-13
JPH0883855A (ja) 1996-03-26
FR2725309A1 (fr) 1996-04-05

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