KR960012535A - 불휘발성 반도체 기억장치 및 그 제조방법 - Google Patents
불휘발성 반도체 기억장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR960012535A KR960012535A KR1019950029903A KR19950029903A KR960012535A KR 960012535 A KR960012535 A KR 960012535A KR 1019950029903 A KR1019950029903 A KR 1019950029903A KR 19950029903 A KR19950029903 A KR 19950029903A KR 960012535 A KR960012535 A KR 960012535A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor memory
- nonvolatile semiconductor
- nonvolatile
- memory
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
- G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5612—Multilevel memory cell with more than one floating gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6219108A JPH0883855A (ja) | 1994-09-13 | 1994-09-13 | 不揮発性半導体記憶装置およびその製造方法 |
JP94-219108 | 1994-09-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960012535A true KR960012535A (ko) | 1996-04-20 |
KR100197029B1 KR100197029B1 (ko) | 1999-06-15 |
Family
ID=16730386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950029903A KR100197029B1 (ko) | 1994-09-13 | 1995-09-13 | 불휘발성 반도체 기억장치 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5708285A (ko) |
JP (1) | JPH0883855A (ko) |
KR (1) | KR100197029B1 (ko) |
DE (1) | DE19533709C2 (ko) |
FR (1) | FR2725309B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100350622B1 (ko) * | 2000-12-22 | 2002-08-30 | 엘지전자주식회사 | 컬러 음극선관 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313421A (en) * | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US7071060B1 (en) | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US5712180A (en) * | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5900661A (en) * | 1996-09-18 | 1999-05-04 | Nippon Steel Corporation | EEPROM with bit lines below word lines |
TW417256B (en) * | 1997-01-31 | 2001-01-01 | Seiko Epson Corp | Semiconductor MOS device and its manufacturing method |
US6469343B1 (en) | 1998-04-02 | 2002-10-22 | Nippon Steel Corporation | Multi-level type nonvolatile semiconductor memory device |
US6596590B1 (en) | 1997-04-25 | 2003-07-22 | Nippon Steel Corporation | Method of making multi-level type non-volatile semiconductor memory device |
JP3070531B2 (ja) * | 1997-06-27 | 2000-07-31 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
JPH11274327A (ja) * | 1998-03-23 | 1999-10-08 | Oki Electric Ind Co Ltd | 不揮発性記憶装置及び不揮発性記憶装置の製造方法 |
US6043530A (en) * | 1998-04-15 | 2000-03-28 | Chang; Ming-Bing | Flash EEPROM device employing polysilicon sidewall spacer as an erase gate |
US6876031B1 (en) * | 1999-02-23 | 2005-04-05 | Winbond Electronics Corporation | Method and apparatus for split gate source side injection flash memory cell and array with dedicated erase gates |
JP2000311956A (ja) | 1999-04-27 | 2000-11-07 | Toshiba Corp | 不揮発性半導体記憶装置とその製造方法 |
KR20010005001A (ko) * | 1999-06-30 | 2001-01-15 | 김영환 | 플래쉬 메모리 셀의 제조 방법 |
US6288419B1 (en) * | 1999-07-09 | 2001-09-11 | Micron Technology, Inc. | Low resistance gate flash memory |
US6914819B2 (en) * | 2003-09-04 | 2005-07-05 | Macronix International Co., Ltd. | Non-volatile flash memory |
JP4377676B2 (ja) * | 2003-12-24 | 2009-12-02 | 株式会社東芝 | 半導体装置およびその製造方法 |
KR101079872B1 (ko) * | 2004-03-05 | 2011-11-03 | 매그나칩 반도체 유한회사 | 이이피롬 셀 및 그 제조 방법 |
US7046552B2 (en) * | 2004-03-17 | 2006-05-16 | Actrans System Incorporation, Usa | Flash memory with enhanced program and erase coupling and process of fabricating the same |
JP5039116B2 (ja) * | 2009-11-24 | 2012-10-03 | 株式会社東芝 | 半導体記憶装置 |
US10312248B2 (en) | 2014-11-12 | 2019-06-04 | Silicon Storage Technology, Inc. | Virtual ground non-volatile memory array |
CN107210203B (zh) | 2015-01-22 | 2020-10-16 | 硅存储技术公司 | 高密度分裂栅存储器单元 |
DE102017109082A1 (de) * | 2017-04-27 | 2018-10-31 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Schichtanordnung, elektronisches Bauteil mit einer Schichtanordnung und Verwendung einer Schichtanordnung |
US10700077B2 (en) * | 2018-01-02 | 2020-06-30 | Microchip Technology Incorporated | Memory cell with a flat-topped floating gate structure |
US10998325B2 (en) * | 2018-12-03 | 2021-05-04 | Silicon Storage Technology, Inc. | Memory cell with floating gate, coupling gate and erase gate, and method of making same |
CN114335185A (zh) | 2020-09-30 | 2022-04-12 | 硅存储技术股份有限公司 | 具有设置在字线栅上方的擦除栅的分裂栅双位非易失性存储器单元及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57120297A (en) * | 1981-01-19 | 1982-07-27 | Toshiba Corp | Semiconductor storage device |
GB2104287B (en) * | 1981-08-21 | 1985-02-20 | Gen Electric Co Plc | Data storage devices |
JPS6065576A (ja) * | 1983-09-21 | 1985-04-15 | Fujitsu Ltd | 半導体記憶装置 |
US4667217A (en) * | 1985-04-19 | 1987-05-19 | Ncr Corporation | Two bit vertically/horizontally integrated memory cell |
JPH07120720B2 (ja) * | 1987-12-17 | 1995-12-20 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
US5143860A (en) * | 1987-12-23 | 1992-09-01 | Texas Instruments Incorporated | High density EPROM fabricaiton method having sidewall floating gates |
US5168465A (en) * | 1988-06-08 | 1992-12-01 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
JP2500871B2 (ja) * | 1991-03-30 | 1996-05-29 | 株式会社東芝 | 半導体不揮発性ram |
DE69232814T2 (de) * | 1991-08-19 | 2003-08-07 | Energy Conversion Devices, Inc. | Elektronisch löschbare, direkt überschreibbare multibit-einzelzellen-speicherelemente und aus diesen hergestellte anordnungen |
US5291439A (en) * | 1991-09-12 | 1994-03-01 | International Business Machines Corporation | Semiconductor memory cell and memory array with inversion layer |
JP2817500B2 (ja) * | 1992-02-07 | 1998-10-30 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5331188A (en) * | 1992-02-25 | 1994-07-19 | International Business Machines Corporation | Non-volatile DRAM cell |
FR2693308B1 (fr) * | 1992-07-03 | 1994-08-05 | Commissariat Energie Atomique | Memoire eeprom a triples grilles et son procede de fabrication. |
DE69316298T2 (de) * | 1992-10-02 | 1998-04-23 | Matsushita Electric Ind Co Ltd | Nichtflüchtige Speicherzelle |
JPH0737996A (ja) * | 1993-07-26 | 1995-02-07 | Mitsubishi Electric Corp | メモリセルにトランジスタを用いない半導体記憶装置およびその製造方法 |
JP2956455B2 (ja) * | 1993-11-17 | 1999-10-04 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
US5413946A (en) * | 1994-09-12 | 1995-05-09 | United Microelectronics Corporation | Method of making flash memory cell with self-aligned tunnel dielectric area |
-
1994
- 1994-09-13 JP JP6219108A patent/JPH0883855A/ja active Pending
-
1995
- 1995-09-11 US US08/526,391 patent/US5708285A/en not_active Expired - Fee Related
- 1995-09-12 DE DE19533709A patent/DE19533709C2/de not_active Expired - Fee Related
- 1995-09-12 FR FR9510673A patent/FR2725309B1/fr not_active Expired - Fee Related
- 1995-09-13 KR KR1019950029903A patent/KR100197029B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100350622B1 (ko) * | 2000-12-22 | 2002-08-30 | 엘지전자주식회사 | 컬러 음극선관 |
Also Published As
Publication number | Publication date |
---|---|
KR100197029B1 (ko) | 1999-06-15 |
DE19533709C2 (de) | 2001-07-12 |
FR2725309B1 (fr) | 1998-05-22 |
DE19533709A1 (de) | 1996-03-14 |
US5708285A (en) | 1998-01-13 |
JPH0883855A (ja) | 1996-03-26 |
FR2725309A1 (fr) | 1996-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR960012535A (ko) | 불휘발성 반도체 기억장치 및 그 제조방법 | |
KR900702578A (ko) | 불휘발성 반도체 메모리 및 그 제조방법 | |
DE69522412D1 (de) | Nichtflüchtiger Halbleiterspeicher | |
KR960008845A (ko) | 반도체 기억장치 | |
KR950034612A (ko) | 반도체 구조물 및 그 제조 방법 | |
DE69510337D1 (de) | Halbleiterspeicheranordnungen und herstellungsverfahren | |
IT1282087B1 (it) | Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo | |
GB2251123B (en) | Nonvolatile semiconductor memory device and the manufacturing method therefor | |
KR960009110A (ko) | 반도체 장치 및 그 제조방법 | |
KR960012496A (ko) | 반도체기억장치 및 그 제조방법 | |
DE69520902D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
KR970700917A (ko) | 적응 감지 기능을 갖는 플래쉬(flash)메모리 및 방법(FLASH MEMORY HAVING ADAPTIVE SENSING AND METHOD) | |
DE59509657D1 (de) | Programmierbarer Halbleiterspeicher | |
DE69420591D1 (de) | Nichtflüchtige Halbleiterspeicher | |
KR890004434A (ko) | 불휘발성 반도체기억장치 및 그 제조방법 | |
EP0655785A3 (en) | Non-volatile semiconductor memory device and method of manufacture. | |
KR960009107A (ko) | 반도체장치와 그 제조방법 | |
KR960012025A (ko) | 불휘발성 반도체 기억 장치와 그 과잉 기록 구제 방법 | |
DE69637344D1 (de) | Halbleiterspeicher | |
KR960015900A (ko) | 반도체 장치 및 그 제조방법 | |
DE69614046D1 (de) | Nichtflüchtige Halbleiterspeicher | |
DE69520333D1 (de) | Halbleiterspeicher | |
DE69520254D1 (de) | Halbleiterspeicher | |
KR970004015A (ko) | 반도체장치 및 그의 제조방법 | |
KR960012313A (ko) | 반도체 장치 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030206 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |