KR970700917A - 적응 감지 기능을 갖는 플래쉬(flash)메모리 및 방법(FLASH MEMORY HAVING ADAPTIVE SENSING AND METHOD) - Google Patents

적응 감지 기능을 갖는 플래쉬(flash)메모리 및 방법(FLASH MEMORY HAVING ADAPTIVE SENSING AND METHOD)

Info

Publication number
KR970700917A
KR970700917A KR1019960704272A KR19960704272A KR970700917A KR 970700917 A KR970700917 A KR 970700917A KR 1019960704272 A KR1019960704272 A KR 1019960704272A KR 19960704272 A KR19960704272 A KR 19960704272A KR 970700917 A KR970700917 A KR 970700917A
Authority
KR
South Korea
Prior art keywords
flash memory
adaptive sensing
adaptive
sensing
flash
Prior art date
Application number
KR1019960704272A
Other languages
English (en)
Other versions
KR100378574B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970700917A publication Critical patent/KR970700917A/ko
Application granted granted Critical
Publication of KR100378574B1 publication Critical patent/KR100378574B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
KR1019960704272A 1994-12-06 1995-12-06 적응감지기능을갖는플래쉬(flash)메모리 KR100378574B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/349,787 1994-12-06
US08/349,787 US5537358A (en) 1994-12-06 1994-12-06 Flash memory having adaptive sensing and method

Publications (2)

Publication Number Publication Date
KR970700917A true KR970700917A (ko) 1997-02-12
KR100378574B1 KR100378574B1 (ko) 2003-08-02

Family

ID=23373965

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960704272A KR100378574B1 (ko) 1994-12-06 1995-12-06 적응감지기능을갖는플래쉬(flash)메모리

Country Status (5)

Country Link
US (1) US5537358A (ko)
EP (1) EP0742945B1 (ko)
KR (1) KR100378574B1 (ko)
DE (1) DE69526210T2 (ko)
WO (1) WO1996018193A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100300549B1 (ko) * 1999-06-16 2001-11-01 김영환 비휘발성 메모리 센싱장치 및 방법

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8027194B2 (en) 1988-06-13 2011-09-27 Samsung Electronics Co., Ltd. Memory system and method of accessing a semiconductor memory device
US5973956A (en) * 1995-07-31 1999-10-26 Information Storage Devices, Inc. Non-volatile electrically alterable semiconductor memory for analog and digital storage
JPH09320282A (ja) * 1996-05-27 1997-12-12 Sharp Corp 不揮発性半導体記憶装置の消去制御方法
FR2756411B1 (fr) * 1996-11-28 1998-12-31 Sgs Thomson Microelectronics Procede d'effacement d'une memoire non volatile et electriquement effacable, et dispositifs associes
US6781883B1 (en) * 1997-03-20 2004-08-24 Altera Corporation Apparatus and method for margin testing single polysilicon EEPROM cells
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
KR100463585B1 (ko) * 1997-12-31 2005-05-18 주식회사 하이닉스반도체 플래쉬메모리의센스앰프
US6928001B2 (en) * 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6396741B1 (en) * 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
JP4205311B2 (ja) * 2001-02-26 2009-01-07 富士通マイクロエレクトロニクス株式会社 フローティングゲートを利用した半導体不揮発性メモリ
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6643181B2 (en) 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
TWI292914B (ko) * 2002-01-17 2008-01-21 Macronix Int Co Ltd
US6700818B2 (en) * 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
US7190620B2 (en) * 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6700815B2 (en) * 2002-04-08 2004-03-02 Advanced Micro Devices, Inc. Refresh scheme for dynamic page programming
KR100456596B1 (ko) * 2002-05-08 2004-11-09 삼성전자주식회사 부유트랩형 비휘발성 기억소자의 소거 방법
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6891752B1 (en) 2002-07-31 2005-05-10 Advanced Micro Devices System and method for erase voltage control during multiple sector erase of a flash memory device
US6826107B2 (en) * 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US6538940B1 (en) 2002-09-26 2003-03-25 Motorola, Inc. Method and circuitry for identifying weak bits in an MRAM
US6992932B2 (en) 2002-10-29 2006-01-31 Saifun Semiconductors Ltd Method circuit and system for read error detection in a non-volatile memory array
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6963505B2 (en) * 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
US6819615B1 (en) * 2002-10-31 2004-11-16 Advanced Micro Device, Inc. Memory device having resistive element coupled to reference cell for improved reliability
US6967896B2 (en) * 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US6839281B2 (en) * 2003-04-14 2005-01-04 Jian Chen Read and erase verify methods and circuits suitable for low voltage non-volatile memories
US7142464B2 (en) * 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7324374B2 (en) * 2003-06-20 2008-01-29 Spansion Llc Memory with a core-based virtual ground and dynamic reference sensing scheme
JP2005092923A (ja) * 2003-09-12 2005-04-07 Renesas Technology Corp 半導体記憶装置
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US6954393B2 (en) * 2003-09-16 2005-10-11 Saifun Semiconductors Ltd. Reading array cell with matched reference cell
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
US7652930B2 (en) 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7755938B2 (en) * 2004-04-19 2010-07-13 Saifun Semiconductors Ltd. Method for reading a memory array with neighbor effect cancellation
US7366025B2 (en) * 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US20060036803A1 (en) * 2004-08-16 2006-02-16 Mori Edan Non-volatile memory device controlled by a micro-controller
EP1782426B1 (en) * 2004-08-17 2015-10-28 Atmel Corporation Self-adaptive program delay circuitry for programmable memories
FR2874449B1 (fr) * 2004-08-17 2008-04-04 Atmel Corp Circuit de retard de programme auto-adaptatif pour memoires programmables
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7257025B2 (en) * 2004-12-09 2007-08-14 Saifun Semiconductors Ltd Method for reading non-volatile memory cells
US7099180B1 (en) * 2005-02-15 2006-08-29 Intel Corporation Phase change memory bits reset through a series of pulses of increasing amplitude
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7184313B2 (en) 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
JP2007027760A (ja) 2005-07-18 2007-02-01 Saifun Semiconductors Ltd 高密度不揮発性メモリアレイ及び製造方法
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8116142B2 (en) * 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7710787B2 (en) * 2006-04-11 2010-05-04 Analog Devices, Inc. Method of erasing an EEPROM device
US7701779B2 (en) * 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7778088B2 (en) * 2006-12-19 2010-08-17 Spansion Llc Erasing flash memory using adaptive drain and/or gate bias
US8036044B2 (en) * 2009-07-16 2011-10-11 Sandisk Technologies Inc. Dynamically adjustable erase and program levels for non-volatile memory
US9431125B2 (en) 2013-03-15 2016-08-30 Sandisk Technologies Llc Method and system for adaptive setting of verify levels in flash memory
KR20160021654A (ko) * 2014-08-18 2016-02-26 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작방법
JP2017216025A (ja) * 2016-05-31 2017-12-07 東芝メモリ株式会社 半導体記憶装置
CN108346439B (zh) * 2018-03-14 2020-12-18 上海华虹宏力半导体制造有限公司 一种闪存阵列及其参考电流产生方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611301A (en) * 1983-04-07 1986-09-09 Kabushiki Kaisha Toshiba Read only memory
DE69031276T2 (de) * 1989-06-12 1998-01-15 Toshiba Kawasaki Kk Halbleiterspeicheranordnung
JP3454520B2 (ja) * 1990-11-30 2003-10-06 インテル・コーポレーション フラッシュ記憶装置の書込み状態を確認する回路及びその方法
JPH06259977A (ja) * 1993-03-03 1994-09-16 Nec Ic Microcomput Syst Ltd フラッシュ消去型不揮発性メモリ
US5414664A (en) * 1993-05-28 1995-05-09 Macronix International Co., Ltd. Flash EPROM with block erase flags for over-erase protection
DE69426487T2 (de) * 1994-03-28 2001-06-07 St Microelectronics Srl Verfahren und Schaltung zur Referenzsignalerzeugung zur Differentialauswertung des Inhalts von nichtflüchtigen Speicherzellen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100300549B1 (ko) * 1999-06-16 2001-11-01 김영환 비휘발성 메모리 센싱장치 및 방법

Also Published As

Publication number Publication date
KR100378574B1 (ko) 2003-08-02
EP0742945B1 (en) 2002-04-03
EP0742945A1 (en) 1996-11-20
DE69526210D1 (de) 2002-05-08
WO1996018193A1 (en) 1996-06-13
US5537358A (en) 1996-07-16
DE69526210T2 (de) 2002-11-28

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