KR960011703A - 반도체 메모리 - Google Patents

반도체 메모리 Download PDF

Info

Publication number
KR960011703A
KR960011703A KR1019950029274A KR19950029274A KR960011703A KR 960011703 A KR960011703 A KR 960011703A KR 1019950029274 A KR1019950029274 A KR 1019950029274A KR 19950029274 A KR19950029274 A KR 19950029274A KR 960011703 A KR960011703 A KR 960011703A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019950029274A
Other languages
English (en)
Other versions
KR100186277B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960011703A publication Critical patent/KR960011703A/ko
Application granted granted Critical
Publication of KR100186277B1 publication Critical patent/KR100186277B1/ko

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/844—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by splitting the decoders in stages
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
KR1019950029274A 1994-09-09 1995-09-07 반도체 메모리 KR100186277B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-216308 1994-09-09
JP21630894 1994-09-09

Publications (2)

Publication Number Publication Date
KR960011703A true KR960011703A (ko) 1996-04-20
KR100186277B1 KR100186277B1 (ko) 1999-05-15

Family

ID=16686494

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950029274A KR100186277B1 (ko) 1994-09-09 1995-09-07 반도체 메모리

Country Status (2)

Country Link
US (1) US5640365A (ko)
KR (1) KR100186277B1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998044480A1 (en) * 1997-03-27 1998-10-08 Hewlett-Packard Company Address decoder system
DE19823687A1 (de) * 1998-05-27 1999-12-09 Siemens Ag Fuselatch-Schaltung
JP3638214B2 (ja) * 1998-07-30 2005-04-13 株式会社 沖マイクロデザイン 冗長回路
JP3398686B2 (ja) * 1999-06-14 2003-04-21 エヌイーシーマイクロシステム株式会社 半導体記憶装置
US6275442B1 (en) * 2000-05-16 2001-08-14 Hewlett-Packard Company Address decoder and method for ITS accelerated stress testing
WO2002005093A1 (en) * 2000-07-07 2002-01-17 Mosaid Technologies Incorporated Method and circuit for accelerating redundant address matching
US6466505B1 (en) * 2001-05-02 2002-10-15 Cypress Semiconductor Corp. Flexible input structure for an embedded memory
KR20050050343A (ko) * 2003-11-25 2005-05-31 가부시키가이샤 버팔로 메모리 모듈 및 메모리용 보조모듈
KR101009337B1 (ko) * 2008-12-30 2011-01-19 주식회사 하이닉스반도체 반도체 메모리 장치
JP5343734B2 (ja) * 2009-06-26 2013-11-13 富士通株式会社 半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556975A (en) * 1983-02-07 1985-12-03 Westinghouse Electric Corp. Programmable redundancy circuit
JPH01119995A (ja) * 1987-11-02 1989-05-12 Toshiba Corp 半導体メモリ

Also Published As

Publication number Publication date
KR100186277B1 (ko) 1999-05-15
US5640365A (en) 1997-06-17

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