KR960012510A - 반도체 메모리 장치 - Google Patents

반도체 메모리 장치 Download PDF

Info

Publication number
KR960012510A
KR960012510A KR1019950032617A KR19950032617A KR960012510A KR 960012510 A KR960012510 A KR 960012510A KR 1019950032617 A KR1019950032617 A KR 1019950032617A KR 19950032617 A KR19950032617 A KR 19950032617A KR 960012510 A KR960012510 A KR 960012510A
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019950032617A
Other languages
English (en)
Other versions
KR100213850B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012510A publication Critical patent/KR960012510A/ko
Application granted granted Critical
Publication of KR100213850B1 publication Critical patent/KR100213850B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/835—Masking faults in memories by using spares or by reconfiguring using programmable devices with roll call arrangements for redundant substitutions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Static Random-Access Memory (AREA)
KR1019950032617A 1994-09-30 1995-09-29 반도체 메모리 장치 KR100213850B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-259590 1994-09-30
JP6259590A JP2785717B2 (ja) 1994-09-30 1994-09-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR960012510A true KR960012510A (ko) 1996-04-20
KR100213850B1 KR100213850B1 (ko) 1999-08-02

Family

ID=17336226

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950032617A KR100213850B1 (ko) 1994-09-30 1995-09-29 반도체 메모리 장치

Country Status (4)

Country Link
US (1) US5596542A (ko)
JP (1) JP2785717B2 (ko)
KR (1) KR100213850B1 (ko)
CN (2) CN1525569A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102390200B1 (ko) * 2021-03-31 2022-04-25 한국에스에스(주) 알루미늄 하니컴 구조체의 압출장치 및 압출방법

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2800730B2 (ja) * 1995-08-17 1998-09-21 日本電気株式会社 半導体記憶装置
KR0164358B1 (ko) * 1995-08-31 1999-02-18 김광호 반도체 메모리 장치의 서브워드라인 디코더
EP0768672B1 (en) * 1995-09-29 2001-04-04 STMicroelectronics S.r.l. Hierarchic memory device
US5848006A (en) * 1995-12-06 1998-12-08 Nec Corporation Redundant semiconductor memory device using a single now address decoder for driving both sub-wordlines and redundant sub-wordlines
JP3223817B2 (ja) * 1996-11-08 2001-10-29 日本電気株式会社 半導体メモリ装置及びその駆動方法
JPH10241398A (ja) * 1997-02-28 1998-09-11 Nec Corp 半導体メモリ装置
US5933376A (en) * 1997-02-28 1999-08-03 Lucent Technologies Inc. Semiconductor memory device with electrically programmable redundancy
US6191999B1 (en) * 1997-06-20 2001-02-20 Fujitsu Limited Semiconductor memory device with reduced power consumption
KR100521313B1 (ko) * 1997-09-11 2006-01-12 삼성전자주식회사 반도체메모리장치의불량셀테스트방법
JPH11144494A (ja) 1997-11-12 1999-05-28 Nec Corp 半導体メモリ
DE19813504A1 (de) * 1998-03-26 1999-09-30 Siemens Ag Schaltungsanordnung und Verfahren zur automatischen Erkennung und Beseitigung von Wortleitungs-Bitleitungs-Kurzschlüssen
JPH11354744A (ja) * 1998-06-09 1999-12-24 Matsushita Electric Ind Co Ltd 半導体メモリ装置
US6469947B2 (en) 1999-06-29 2002-10-22 Hyundai Electronics Co., Ltd. Semiconductor memory device having regions with independent word lines alternately selected for refresh operation
KR100361863B1 (ko) 1999-06-29 2002-11-22 주식회사 하이닉스반도체 반도체 메모리 장치
US6545923B2 (en) 2001-05-04 2003-04-08 Samsung Electronics Co., Ltd. Negatively biased word line scheme for a semiconductor memory device
WO2004077444A1 (ja) 2003-02-27 2004-09-10 Fujitsu Limited 半導体記憶装置及びそのリフレッシュ方法
JP4703148B2 (ja) * 2004-09-08 2011-06-15 株式会社東芝 不揮発性半導体記憶装置
CN101091223B (zh) 2004-12-24 2011-06-08 斯班逊有限公司 施加偏压至储存器件的方法与装置
JP2007257707A (ja) * 2006-03-22 2007-10-04 Elpida Memory Inc 半導体記憶装置
KR100899392B1 (ko) * 2007-08-20 2009-05-27 주식회사 하이닉스반도체 리프레시 특성 테스트 회로 및 이를 이용한 리프레시 특성테스트 방법
US20090307891A1 (en) * 2008-06-17 2009-12-17 Ge-Hitachi Nuclear Energy Americas Llc Method and apparatus for remotely inspecting and/or treating welds, pipes, vessels and/or other components used in reactor coolant systems or other process applications
KR20170027493A (ko) * 2015-09-02 2017-03-10 에스케이하이닉스 주식회사 반도체 장치의 레이아웃 구조
KR20210110012A (ko) 2020-02-28 2021-09-07 에스케이하이닉스 주식회사 서브 워드라인 드라이버

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3311427A1 (de) * 1983-03-29 1984-10-04 Siemens AG, 1000 Berlin und 8000 München Integrierter dynamischer schreib-lesespeicher
JPH03225851A (ja) * 1990-01-30 1991-10-04 Sharp Corp 半導体記憶装置
JPH04155692A (ja) * 1990-10-18 1992-05-28 Nec Ic Microcomput Syst Ltd 半導体メモリの行デコーダ回路
KR940008722B1 (ko) * 1991-12-04 1994-09-26 삼성전자 주식회사 반도체 메모리 장치의 워드라인 드라이버 배열방법
JP2867774B2 (ja) * 1992-01-06 1999-03-10 日本電気株式会社 半導体メモリ装置
JPH05243386A (ja) * 1992-02-27 1993-09-21 Mitsubishi Electric Corp 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102390200B1 (ko) * 2021-03-31 2022-04-25 한국에스에스(주) 알루미늄 하니컴 구조체의 압출장치 및 압출방법

Also Published As

Publication number Publication date
CN1096080C (zh) 2002-12-11
US5596542A (en) 1997-01-21
JPH08102529A (ja) 1996-04-16
CN1153387A (zh) 1997-07-02
JP2785717B2 (ja) 1998-08-13
KR100213850B1 (ko) 1999-08-02
CN1525569A (zh) 2004-09-01

Similar Documents

Publication Publication Date Title
DE69518343T2 (de) Halbleiterspeicheranordnung
DE69521159D1 (de) Halbleiterspeicheranordnung
DE69422901D1 (de) Halbleiterspeicheranordnung
DE69603632D1 (de) Halbleiter-Speicheranordnung
KR960008845A (ko) 반도체 기억장치
DE69520902T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69512700T2 (de) Halbleiterspeicheranordnung
DE69615783D1 (de) Halbleiterspeicheranordnung
KR960012510A (ko) 반도체 메모리 장치
DE69600591D1 (de) Halbleiterspeicheranordnung
DE69520333D1 (de) Halbleiterspeicher
DE69520254D1 (de) Halbleiterspeicher
DE69427443D1 (de) Halbleiterspeicheranordnung
DE69432846D1 (de) Halbleiterspeichereinrichtung
KR960012033A (ko) 반도체 기억장치
DE69427107T2 (de) Halbleiterspeicheranordnung
KR960011703A (ko) 반도체 메모리
DE69521066D1 (de) Halbleiterspeicheranordnung
DE69526834D1 (de) Halbleiterspeicher
KR960012034A (ko) 반도체 메모리
DE69423996D1 (de) Halbleiterspeicheranordnung
KR960011705A (ko) 반도체 메모리 장치
DE69731802D1 (de) Halbleiter-Speicherbauteil
KR960012010A (ko) 반도체 메모리
DE69420195T2 (de) Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20040507

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee