DE69526834D1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE69526834D1
DE69526834D1 DE69526834T DE69526834T DE69526834D1 DE 69526834 D1 DE69526834 D1 DE 69526834D1 DE 69526834 T DE69526834 T DE 69526834T DE 69526834 T DE69526834 T DE 69526834T DE 69526834 D1 DE69526834 D1 DE 69526834D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69526834T
Other languages
English (en)
Other versions
DE69526834T2 (de
Inventor
Junichi Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69526834D1 publication Critical patent/DE69526834D1/de
Publication of DE69526834T2 publication Critical patent/DE69526834T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
DE69526834T 1994-11-10 1995-10-18 Halbleiterspeicher Expired - Fee Related DE69526834T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6276260A JP3028913B2 (ja) 1994-11-10 1994-11-10 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69526834D1 true DE69526834D1 (de) 2002-07-04
DE69526834T2 DE69526834T2 (de) 2003-01-02

Family

ID=17566957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69526834T Expired - Fee Related DE69526834T2 (de) 1994-11-10 1995-10-18 Halbleiterspeicher

Country Status (7)

Country Link
US (1) US5625599A (de)
EP (1) EP0712134B1 (de)
JP (1) JP3028913B2 (de)
KR (1) KR100197764B1 (de)
CN (1) CN1121694C (de)
DE (1) DE69526834T2 (de)
TW (1) TW421742B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5978287A (en) * 1997-01-10 1999-11-02 Micron Technology, Inc. Input/output device having shared active area
KR100244247B1 (ko) * 1997-04-09 2000-02-01 김영환 센싱회로
JP3421530B2 (ja) * 1997-04-11 2003-06-30 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
JPH11260059A (ja) * 1998-03-13 1999-09-24 Mitsubishi Electric Corp 半導体集積回路
US6385079B1 (en) * 2001-08-31 2002-05-07 Hewlett-Packard Company Methods and structure for maximizing signal to noise ratio in resistive array
CN1423278B (zh) * 2001-12-04 2012-05-30 旺宏电子股份有限公司 具有存储器阵列的高密度集成电路
CN100362661C (zh) * 2003-08-04 2008-01-16 旺宏电子股份有限公司 具对称性选择晶体管的快闪存储器
JP4351178B2 (ja) * 2005-02-25 2009-10-28 寛治 大塚 半導体記憶装置
CN114155896B (zh) * 2020-09-04 2024-03-29 长鑫存储技术有限公司 半导体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158241A (en) * 1978-06-15 1979-06-12 Fujitsu Limited Semiconductor memory device with a plurality of memory cells and a sense amplifier circuit thereof
US4780850A (en) * 1986-10-31 1988-10-25 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic random access memory
US5023842A (en) * 1988-07-11 1991-06-11 Kabushiki Kaisha Toshiba Semiconductor memory having improved sense amplifiers
US5222038A (en) * 1989-06-13 1993-06-22 Kabushiki Kaisha Toshiba Dynamic random access memory with enhanced sense-amplifier circuit
JP2523925B2 (ja) * 1990-03-29 1996-08-14 株式会社東芝 半導体記憶装置
JPH04332163A (ja) * 1991-05-02 1992-11-19 Sony Corp 半導体メモリ
JP2773465B2 (ja) * 1991-06-06 1998-07-09 三菱電機株式会社 ダイナミック型半導体記憶装置
JP3068352B2 (ja) * 1992-12-01 2000-07-24 日本電気株式会社 半導体メモリ
JP3004177B2 (ja) * 1993-09-16 2000-01-31 株式会社東芝 半導体集積回路装置

Also Published As

Publication number Publication date
DE69526834T2 (de) 2003-01-02
CN1121694C (zh) 2003-09-17
EP0712134A3 (de) 1999-05-12
US5625599A (en) 1997-04-29
EP0712134B1 (de) 2002-05-29
KR100197764B1 (ko) 1999-06-15
TW421742B (en) 2001-02-11
JP3028913B2 (ja) 2000-04-04
CN1156314A (zh) 1997-08-06
KR960019736A (ko) 1996-06-17
JPH08138378A (ja) 1996-05-31
EP0712134A2 (de) 1996-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee