KR960012034A - 반도체 메모리 - Google Patents

반도체 메모리 Download PDF

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Publication number
KR960012034A
KR960012034A KR1019950032263A KR19950032263A KR960012034A KR 960012034 A KR960012034 A KR 960012034A KR 1019950032263 A KR1019950032263 A KR 1019950032263A KR 19950032263 A KR19950032263 A KR 19950032263A KR 960012034 A KR960012034 A KR 960012034A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019950032263A
Other languages
English (en)
Other versions
KR0184917B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012034A publication Critical patent/KR960012034A/ko
Application granted granted Critical
Publication of KR0184917B1 publication Critical patent/KR0184917B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
KR1019950032263A 1994-09-28 1995-09-28 반도체 메모리 KR0184917B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25733294A JP3425811B2 (ja) 1994-09-28 1994-09-28 半導体メモリ
JP94-257332 1994-09-28

Publications (2)

Publication Number Publication Date
KR960012034A true KR960012034A (ko) 1996-04-20
KR0184917B1 KR0184917B1 (ko) 1999-04-15

Family

ID=17304896

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950032263A KR0184917B1 (ko) 1994-09-28 1995-09-28 반도체 메모리

Country Status (3)

Country Link
US (1) US5737269A (ko)
JP (1) JP3425811B2 (ko)
KR (1) KR0184917B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990016231A (ko) * 1997-08-13 1999-03-05 윤종용 동기식 반도체 메모리 장치

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100200930B1 (ko) * 1996-12-06 1999-06-15 윤종용 버스트 모드동작에 적합한 반도체 메모리 장치의 로우 디코더
JP3748648B2 (ja) * 1996-12-19 2006-02-22 日本電気株式会社 バーストカウンター回路
KR100231723B1 (ko) * 1996-12-28 1999-11-15 김영환 플래쉬 메모리 장치
US6367030B1 (en) 1997-10-09 2002-04-02 Matsushita Electric Industrial Co., Ltd. Address conversion circuit and address conversion system with redundancy decision circuitry
DE19963689A1 (de) * 1999-12-29 2001-07-12 Infineon Technologies Ag Schaltungsanordnung eines integrierten Halbleiterspeichers zum Speichern von Adressen fehlerhafter Speicherzellen
WO2001071725A1 (de) * 2000-03-23 2001-09-27 Infineon Technologies Ag Verfahren und vorrichtung zum verarbeiten von fehleradressen
JP3594891B2 (ja) * 2000-09-12 2004-12-02 沖電気工業株式会社 半導体記憶装置およびその検査方法
JP4175852B2 (ja) * 2002-09-13 2008-11-05 スパンション エルエルシー 冗長セルアレイへの置き換えを正常に行う半導体メモリ

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473895A (en) * 1979-06-15 1984-09-25 Fujitsu Limited Semiconductor memory device
US4577294A (en) * 1983-04-18 1986-03-18 Advanced Micro Devices, Inc. Redundant memory circuit and method of programming and verifying the circuit
JPS62222500A (ja) * 1986-03-20 1987-09-30 Fujitsu Ltd 半導体記憶装置
JPH0748316B2 (ja) * 1988-05-30 1995-05-24 日本電気株式会社 デュアルポートメモリ回路
US5261064A (en) * 1989-10-03 1993-11-09 Advanced Micro Devices, Inc. Burst access memory
JP3019869B2 (ja) * 1990-10-16 2000-03-13 富士通株式会社 半導体メモリ
US5319759A (en) * 1991-04-22 1994-06-07 Acer Incorporated Burst address sequence generator
JPH05109292A (ja) * 1991-10-14 1993-04-30 Toshiba Corp 不揮発性半導体記憶装置
JP2734315B2 (ja) * 1992-09-24 1998-03-30 日本電気株式会社 半導体メモリ装置
JP3265076B2 (ja) * 1993-09-20 2002-03-11 株式会社東芝 半導体記憶装置
JPH07182893A (ja) * 1993-12-24 1995-07-21 Mitsubishi Electric Corp 半導体記憶装置
JPH07235199A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd 半導体記憶装置、及びデータ処理装置
US5548225A (en) * 1994-05-26 1996-08-20 Texas Instruments Incorportated Block specific spare circuit
JP3226425B2 (ja) * 1994-09-09 2001-11-05 富士通株式会社 半導体記憶装置
JP2742220B2 (ja) * 1994-09-09 1998-04-22 松下電器産業株式会社 半導体記憶装置
US5572470A (en) * 1995-05-10 1996-11-05 Sgs-Thomson Microelectronics, Inc. Apparatus and method for mapping a redundant memory column to a defective memory column

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990016231A (ko) * 1997-08-13 1999-03-05 윤종용 동기식 반도체 메모리 장치

Also Published As

Publication number Publication date
JPH08102186A (ja) 1996-04-16
KR0184917B1 (ko) 1999-04-15
JP3425811B2 (ja) 2003-07-14
US5737269A (en) 1998-04-07

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