KR960012033A - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR960012033A
KR960012033A KR1019950026466A KR19950026466A KR960012033A KR 960012033 A KR960012033 A KR 960012033A KR 1019950026466 A KR1019950026466 A KR 1019950026466A KR 19950026466 A KR19950026466 A KR 19950026466A KR 960012033 A KR960012033 A KR 960012033A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019950026466A
Other languages
English (en)
Other versions
KR100200891B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012033A publication Critical patent/KR960012033A/ko
Application granted granted Critical
Publication of KR100200891B1 publication Critical patent/KR100200891B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
KR1019950026466A 1994-09-06 1995-08-24 반도체 기억장치 KR100200891B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-212436 1994-09-06
JP6212436A JPH0877776A (ja) 1994-09-06 1994-09-06 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR960012033A true KR960012033A (ko) 1996-04-20
KR100200891B1 KR100200891B1 (ko) 1999-06-15

Family

ID=16622578

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950026466A KR100200891B1 (ko) 1994-09-06 1995-08-24 반도체 기억장치

Country Status (4)

Country Link
US (1) US5579266A (ko)
JP (1) JPH0877776A (ko)
KR (1) KR100200891B1 (ko)
TW (1) TW310426B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220125651A (ko) * 2021-03-05 2022-09-14 이강암 자동 장돌 머신 및 이를 이용한 장돌 제조 방법

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100196515B1 (ko) * 1995-06-30 1999-06-15 김영환 반도체 메모리 장치의 리던던시 회로
JPH10214497A (ja) * 1997-01-31 1998-08-11 Mitsubishi Electric Corp 半導体記憶装置
US5898626A (en) * 1997-06-19 1999-04-27 Silicon Magic Corporation Redundancy programming circuit and system for semiconductor memory
JP3638757B2 (ja) * 1997-06-24 2005-04-13 株式会社 沖マイクロデザイン 半導体集積回路
JPH11121627A (ja) * 1997-10-16 1999-04-30 Oki Electric Ind Co Ltd 半導体メモリ
US6108797A (en) * 1997-12-11 2000-08-22 Winbond Electronics Corp. Method and system for loading microprograms in partially defective memory
US6141768A (en) * 1998-03-12 2000-10-31 Winbond Electronics Corp. Self-corrective memory system and method
US6268760B1 (en) 1998-04-30 2001-07-31 Texas Instruments Incorporated Hysteretic fuse control circuit with serial interface fusing
US6370655B1 (en) 1998-10-19 2002-04-09 Winbond Electronics Corp. Method and system for reversed-sequence code loading into partially defective memory
US6185135B1 (en) 1999-01-05 2001-02-06 International Business Machines Corporation Robust wordline activation delay monitor using a plurality of sample wordlines
US6115310A (en) * 1999-01-05 2000-09-05 International Business Machines Corporation Wordline activation delay monitor using sample wordline located in data-storing array
US6335891B1 (en) 1999-02-25 2002-01-01 Micron Technology, Inc. Device and method for reducing standby current in a memory device by disconnecting bit line load devices in unused columns of the memory device from a supply voltage
US6285619B1 (en) * 1999-11-18 2001-09-04 Infineon Technologies North America Corp. Memory cell
TW449685B (en) 1999-12-21 2001-08-11 Winbond Electronics Corp Handling method and system for partial defective memory
JP2001195893A (ja) 2000-01-13 2001-07-19 Mitsubishi Electric Corp スタティック型半導体記憶装置
US6744681B2 (en) * 2001-07-24 2004-06-01 Hewlett-Packard Development Company, L.P. Fault-tolerant solid state memory
US7222274B2 (en) * 2004-02-25 2007-05-22 International Business Machines Corporation Testing and repair methodology for memories having redundancy
US20120106016A1 (en) * 2010-10-27 2012-05-03 Thermaltherapeutic Systems, Inc. Fuse Link System For A Hyperthermia Apparatus
US20120105136A1 (en) * 2010-10-27 2012-05-03 Thermaltherapeutic Systems, Inc. Fuse link system for disposable component

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262800A (ja) * 1988-08-29 1990-03-02 Nec Corp 半導体集積回路
JPH02177087A (ja) * 1988-12-27 1990-07-10 Nec Corp リダンダンシーデコーダ
US5471426A (en) * 1992-01-31 1995-11-28 Sgs-Thomson Microelectronics, Inc. Redundancy decoder
KR960008825B1 (en) * 1993-11-18 1996-07-05 Samsung Electronics Co Ltd Row redundancy circuit and method of semiconductor memory device with double row decoder
US5446698A (en) * 1994-06-30 1995-08-29 Sgs-Thomson Microelectronics, Inc. Block decoded redundant master wordline

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220125651A (ko) * 2021-03-05 2022-09-14 이강암 자동 장돌 머신 및 이를 이용한 장돌 제조 방법

Also Published As

Publication number Publication date
TW310426B (ko) 1997-07-11
JPH0877776A (ja) 1996-03-22
US5579266A (en) 1996-11-26
KR100200891B1 (ko) 1999-06-15

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A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee