DE69731802D1 - Halbleiter-Speicherbauteil - Google Patents

Halbleiter-Speicherbauteil

Info

Publication number
DE69731802D1
DE69731802D1 DE69731802T DE69731802T DE69731802D1 DE 69731802 D1 DE69731802 D1 DE 69731802D1 DE 69731802 T DE69731802 T DE 69731802T DE 69731802 T DE69731802 T DE 69731802T DE 69731802 D1 DE69731802 D1 DE 69731802D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69731802T
Other languages
English (en)
Other versions
DE69731802T2 (de
Inventor
Masahiro Yoshida
Hideyuki Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE69731802D1 publication Critical patent/DE69731802D1/de
Publication of DE69731802T2 publication Critical patent/DE69731802T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69731802T 1996-09-24 1997-09-11 Halbleiter-Speicherbauteil Expired - Fee Related DE69731802T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25209596 1996-09-24
JP8252095A JPH1098163A (ja) 1996-09-24 1996-09-24 半導体記憶装置のキャパシタ構造及びその形成方法

Publications (2)

Publication Number Publication Date
DE69731802D1 true DE69731802D1 (de) 2005-01-05
DE69731802T2 DE69731802T2 (de) 2005-12-08

Family

ID=17232470

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69731802T Expired - Fee Related DE69731802T2 (de) 1996-09-24 1997-09-11 Halbleiter-Speicherbauteil

Country Status (6)

Country Link
US (2) US6236078B1 (de)
EP (1) EP0831531B1 (de)
JP (1) JPH1098163A (de)
CN (1) CN1149677C (de)
DE (1) DE69731802T2 (de)
TW (1) TW360973B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19842704C2 (de) * 1998-09-17 2002-03-28 Infineon Technologies Ag Herstellverfahren für einen Kondensator mit einem Hoch-epsilon-Dielektrikum oder einem Ferroelektrikum nach dem Fin-Stack-Prinzip unter Einsatz einer Negativform
US6746877B1 (en) * 2003-01-07 2004-06-08 Infineon Ag Encapsulation of ferroelectric capacitors
US6800892B2 (en) * 2003-02-10 2004-10-05 Micron Technology, Inc. Memory devices, and electronic systems comprising memory devices
KR101100427B1 (ko) * 2005-08-24 2011-12-30 삼성전자주식회사 이온 전도층을 포함하는 불휘발성 반도체 메모리 장치와 그제조 및 동작 방법
KR101814576B1 (ko) * 2011-04-20 2018-01-05 삼성전자 주식회사 반도체 소자

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2642364B2 (ja) 1987-12-03 1997-08-20 富士通株式会社 半導体記憶装置及びその製造方法
JPH02312269A (ja) * 1989-05-26 1990-12-27 Toshiba Corp 半導体記憶装置およびその製造方法
US5196365A (en) * 1989-07-05 1993-03-23 Fujitsu Limited Method of making semiconductor memory device having stacked capacitor
US5164337A (en) * 1989-11-01 1992-11-17 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having a capacitor in a stacked memory cell
KR930002292B1 (ko) * 1990-06-02 1993-03-29 삼성전자 주식회사 반도체 장치 및 그 제조방법
US5236859A (en) * 1990-06-05 1993-08-17 Samsung Electronics Co., Ltd. Method of making stacked-capacitor for a dram cell same
KR920001716A (ko) * 1990-06-05 1992-01-30 김광호 디램셀의 적층형 캐패시터의 구조 및 제조방법
KR930008583B1 (ko) * 1990-10-25 1993-09-09 현대전자산업주식회사 스택캐패시터 및 그 제조방법
JP2633395B2 (ja) * 1990-12-12 1997-07-23 シャープ株式会社 半導体メモリ素子の製造方法
US5219780A (en) * 1991-03-14 1993-06-15 Gold Star Electron Co., Ltd. Method for fabricating a semiconductor memory cell
US5053351A (en) * 1991-03-19 1991-10-01 Micron Technology, Inc. Method of making stacked E-cell capacitor DRAM cell
KR940011801B1 (ko) * 1991-03-23 1994-12-26 삼성전자 주식회사 고용량 캐패시터를 포함하는 반도체 장치 및 그의 제조방법
US5068199A (en) * 1991-05-06 1991-11-26 Micron Technology, Inc. Method for anodizing a polysilicon layer lower capacitor plate of a DRAM to increase capacitance
JPH0575056A (ja) * 1991-09-12 1993-03-26 Miyagi Oki Denki Kk 半導体素子の製造方法
US5340763A (en) * 1993-02-12 1994-08-23 Micron Semiconductor, Inc. Multi-pin stacked capacitor utilizing micro villus patterning in a container cell and method to fabricate same
US5354705A (en) * 1993-09-15 1994-10-11 Micron Semiconductor, Inc. Technique to fabricate a container structure with rough inner and outer surfaces
US5449635A (en) * 1993-12-28 1995-09-12 Goldstar Electron Co., Ltd. Method of fabricating a semiconductor memory
KR0140644B1 (ko) * 1994-01-12 1998-06-01 문정환 반도체 메모리장치 및 그 제조방법
KR0154161B1 (ko) * 1994-06-30 1998-10-15 김주용 반도체소자의 캐패시터 제조방법
JPH08204148A (ja) * 1995-01-30 1996-08-09 Sony Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN1185657A (zh) 1998-06-24
EP0831531A1 (de) 1998-03-25
CN1149677C (zh) 2004-05-12
JPH1098163A (ja) 1998-04-14
US6333226B1 (en) 2001-12-25
DE69731802T2 (de) 2005-12-08
TW360973B (en) 1999-06-11
US6236078B1 (en) 2001-05-22
EP0831531B1 (de) 2004-12-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee