DE69706947D1 - Halbleiterspeicher - Google Patents
HalbleiterspeicherInfo
- Publication number
- DE69706947D1 DE69706947D1 DE69706947T DE69706947T DE69706947D1 DE 69706947 D1 DE69706947 D1 DE 69706947D1 DE 69706947 T DE69706947 T DE 69706947T DE 69706947 T DE69706947 T DE 69706947T DE 69706947 D1 DE69706947 D1 DE 69706947D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8098269A JPH09288891A (ja) | 1996-04-19 | 1996-04-19 | 半導体メモリ装置 |
PCT/JP1997/001267 WO1997040500A1 (fr) | 1996-04-19 | 1997-04-11 | Memoire a semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69706947D1 true DE69706947D1 (de) | 2001-10-31 |
DE69706947T2 DE69706947T2 (de) | 2002-03-28 |
Family
ID=14215231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69706947T Expired - Lifetime DE69706947T2 (de) | 1996-04-19 | 1997-04-11 | Halbleiterspeicher |
Country Status (8)
Country | Link |
---|---|
US (1) | US6038160A (de) |
EP (1) | EP0847059B1 (de) |
JP (1) | JPH09288891A (de) |
KR (1) | KR100441837B1 (de) |
CN (1) | CN1119812C (de) |
DE (1) | DE69706947T2 (de) |
TW (1) | TW333704B (de) |
WO (1) | WO1997040500A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6256220B1 (en) | 1997-09-15 | 2001-07-03 | Celis Semiconductor Corporation | Ferroelectric memory with shunted isolated nodes |
US5959878A (en) * | 1997-09-15 | 1999-09-28 | Celis Semiconductor Corporation | Ferroelectric memory cell with shunted ferroelectric capacitor and method of making same |
JPH11273360A (ja) * | 1998-03-17 | 1999-10-08 | Toshiba Corp | 強誘電体記憶装置 |
KR100335266B1 (ko) * | 1998-06-30 | 2002-10-19 | 주식회사 하이닉스반도체 | 반도체메모리장치 |
KR100363102B1 (ko) * | 1998-07-15 | 2003-02-19 | 주식회사 하이닉스반도체 | 강유전체 메모리 |
US6151241A (en) * | 1999-05-19 | 2000-11-21 | Symetrix Corporation | Ferroelectric memory with disturb protection |
KR100339428B1 (ko) * | 1999-09-07 | 2002-05-31 | 박종섭 | 불휘발성 강유전체 메모리의 셀 블록 구조 |
JP3617615B2 (ja) * | 1999-11-08 | 2005-02-09 | シャープ株式会社 | 強誘電体記憶装置 |
US6566698B2 (en) * | 2000-05-26 | 2003-05-20 | Sony Corporation | Ferroelectric-type nonvolatile semiconductor memory and operation method thereof |
JP3866913B2 (ja) * | 2000-11-21 | 2007-01-10 | 富士通株式会社 | 半導体装置 |
JP2003092364A (ja) * | 2001-05-21 | 2003-03-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR100762225B1 (ko) * | 2001-06-30 | 2007-10-01 | 주식회사 하이닉스반도체 | 반도체 소자의 셀 플레이트 전압 안정화 회로 |
JP2003233984A (ja) * | 2001-12-04 | 2003-08-22 | Sanyo Electric Co Ltd | メモリ装置 |
CN100419909C (zh) * | 2002-03-15 | 2008-09-17 | 三洋电机株式会社 | 强感应体存储器及其动作方法和存储器装置 |
US6826099B2 (en) * | 2002-11-20 | 2004-11-30 | Infineon Technologies Ag | 2T2C signal margin test mode using a defined charge and discharge of BL and /BL |
JP4387407B2 (ja) * | 2004-06-08 | 2009-12-16 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置の検査方法 |
JP2009271999A (ja) * | 2008-05-07 | 2009-11-19 | Toshiba Corp | 抵抗変化メモリ装置 |
US10120674B2 (en) * | 2015-06-02 | 2018-11-06 | Texas Instruments Incorporated | Ferroelectric memory expansion for firmware updates |
EP3507805A4 (de) | 2016-08-31 | 2020-06-03 | Micron Technology, Inc. | Vorrichtungen und verfahren mit ferroelektrischem speicher und zum betrieb von ferroelektrischem speicher |
WO2018044487A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory |
KR102227270B1 (ko) | 2016-08-31 | 2021-03-15 | 마이크론 테크놀로지, 인크. | 강유전 메모리 셀 |
KR102314663B1 (ko) | 2016-08-31 | 2021-10-21 | 마이크론 테크놀로지, 인크. | 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법 |
US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
US10529410B2 (en) * | 2017-12-18 | 2020-01-07 | Micron Technology, Inc. | Techniques for accessing an array of memory cells to reduce parasitic coupling |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
US5329485A (en) * | 1990-11-01 | 1994-07-12 | Olympus Optical Co., Ltd. | Memory device |
JPH0660635A (ja) * | 1992-08-06 | 1994-03-04 | Olympus Optical Co Ltd | 強誘電体メモリ装置 |
US5432731A (en) * | 1993-03-08 | 1995-07-11 | Motorola, Inc. | Ferroelectric memory cell and method of sensing and writing the polarization state thereof |
US5430671A (en) * | 1993-04-09 | 1995-07-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device |
US5381364A (en) * | 1993-06-24 | 1995-01-10 | Ramtron International Corporation | Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation |
US5406510A (en) * | 1993-07-15 | 1995-04-11 | Symetrix Corporation | Non-volatile memory |
JP3191550B2 (ja) * | 1994-02-15 | 2001-07-23 | 松下電器産業株式会社 | 半導体メモリ装置 |
JP3191549B2 (ja) * | 1994-02-15 | 2001-07-23 | 松下電器産業株式会社 | 半導体メモリ装置 |
US5572459A (en) * | 1994-09-16 | 1996-11-05 | Ramtron International Corporation | Voltage reference for a ferroelectric 1T/1C based memory |
US5598366A (en) * | 1995-08-16 | 1997-01-28 | Ramtron International Corporation | Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers |
-
1996
- 1996-04-19 JP JP8098269A patent/JPH09288891A/ja active Pending
-
1997
- 1997-04-11 CN CN97190391A patent/CN1119812C/zh not_active Expired - Fee Related
- 1997-04-11 KR KR1019970709535A patent/KR100441837B1/ko not_active IP Right Cessation
- 1997-04-11 DE DE69706947T patent/DE69706947T2/de not_active Expired - Lifetime
- 1997-04-11 WO PCT/JP1997/001267 patent/WO1997040500A1/ja active IP Right Grant
- 1997-04-11 EP EP97915714A patent/EP0847059B1/de not_active Expired - Lifetime
- 1997-04-17 TW TW086104978A patent/TW333704B/zh not_active IP Right Cessation
- 1997-11-04 US US08/981,441 patent/US6038160A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6038160A (en) | 2000-03-14 |
KR19990028224A (ko) | 1999-04-15 |
EP0847059B1 (de) | 2001-09-26 |
TW333704B (en) | 1998-06-11 |
EP0847059A4 (de) | 1998-11-18 |
CN1119812C (zh) | 2003-08-27 |
EP0847059A2 (de) | 1998-06-10 |
KR100441837B1 (ko) | 2004-10-14 |
WO1997040500A1 (fr) | 1997-10-30 |
DE69706947T2 (de) | 2002-03-28 |
JPH09288891A (ja) | 1997-11-04 |
CN1189234A (zh) | 1998-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |