TW333704B - The semiconductor memory device - Google Patents

The semiconductor memory device

Info

Publication number
TW333704B
TW333704B TW086104978A TW86104978A TW333704B TW 333704 B TW333704 B TW 333704B TW 086104978 A TW086104978 A TW 086104978A TW 86104978 A TW86104978 A TW 86104978A TW 333704 B TW333704 B TW 333704B
Authority
TW
Taiwan
Prior art keywords
memory cell
memory
connects
cell
information
Prior art date
Application number
TW086104978A
Other languages
English (en)
Inventor
Jouji Nakane
Nobuyuki Moriwaki
Original Assignee
Matsushita Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electron Co Ltd filed Critical Matsushita Electron Co Ltd
Application granted granted Critical
Publication of TW333704B publication Critical patent/TW333704B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW086104978A 1996-04-19 1997-04-17 The semiconductor memory device TW333704B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8098269A JPH09288891A (ja) 1996-04-19 1996-04-19 半導体メモリ装置

Publications (1)

Publication Number Publication Date
TW333704B true TW333704B (en) 1998-06-11

Family

ID=14215231

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086104978A TW333704B (en) 1996-04-19 1997-04-17 The semiconductor memory device

Country Status (8)

Country Link
US (1) US6038160A (zh)
EP (1) EP0847059B1 (zh)
JP (1) JPH09288891A (zh)
KR (1) KR100441837B1 (zh)
CN (1) CN1119812C (zh)
DE (1) DE69706947T2 (zh)
TW (1) TW333704B (zh)
WO (1) WO1997040500A1 (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6256220B1 (en) 1997-09-15 2001-07-03 Celis Semiconductor Corporation Ferroelectric memory with shunted isolated nodes
US5959878A (en) * 1997-09-15 1999-09-28 Celis Semiconductor Corporation Ferroelectric memory cell with shunted ferroelectric capacitor and method of making same
JPH11273360A (ja) * 1998-03-17 1999-10-08 Toshiba Corp 強誘電体記憶装置
KR100335266B1 (ko) * 1998-06-30 2002-10-19 주식회사 하이닉스반도체 반도체메모리장치
KR100363102B1 (ko) * 1998-07-15 2003-02-19 주식회사 하이닉스반도체 강유전체 메모리
US6151241A (en) * 1999-05-19 2000-11-21 Symetrix Corporation Ferroelectric memory with disturb protection
KR100339428B1 (ko) * 1999-09-07 2002-05-31 박종섭 불휘발성 강유전체 메모리의 셀 블록 구조
JP3617615B2 (ja) * 1999-11-08 2005-02-09 シャープ株式会社 強誘電体記憶装置
US6566698B2 (en) * 2000-05-26 2003-05-20 Sony Corporation Ferroelectric-type nonvolatile semiconductor memory and operation method thereof
JP3866913B2 (ja) * 2000-11-21 2007-01-10 富士通株式会社 半導体装置
JP2003092364A (ja) * 2001-05-21 2003-03-28 Mitsubishi Electric Corp 半導体記憶装置
KR100762225B1 (ko) * 2001-06-30 2007-10-01 주식회사 하이닉스반도체 반도체 소자의 셀 플레이트 전압 안정화 회로
JP2003233984A (ja) * 2001-12-04 2003-08-22 Sanyo Electric Co Ltd メモリ装置
KR100671385B1 (ko) * 2002-03-15 2007-01-19 산요덴키가부시키가이샤 강유전체 메모리 및 그 동작 방법과 메모리 장치
US6826099B2 (en) * 2002-11-20 2004-11-30 Infineon Technologies Ag 2T2C signal margin test mode using a defined charge and discharge of BL and /BL
JP4387407B2 (ja) * 2004-06-08 2009-12-16 富士通マイクロエレクトロニクス株式会社 半導体記憶装置の検査方法
JP2009271999A (ja) 2008-05-07 2009-11-19 Toshiba Corp 抵抗変化メモリ装置
US10120674B2 (en) * 2015-06-02 2018-11-06 Texas Instruments Incorporated Ferroelectric memory expansion for firmware updates
CN109690680B (zh) 2016-08-31 2023-07-21 美光科技公司 包含二晶体管一电容器的存储器及用于存取所述存储器的设备与方法
SG11201901211XA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
SG11201901168UA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
EP3507804A4 (en) 2016-08-31 2020-07-15 Micron Technology, INC. FERROELECTRIC STORAGE CELLS
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US10529410B2 (en) * 2017-12-18 2020-01-07 Micron Technology, Inc. Techniques for accessing an array of memory cells to reduce parasitic coupling

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US5329485A (en) * 1990-11-01 1994-07-12 Olympus Optical Co., Ltd. Memory device
JPH0660635A (ja) * 1992-08-06 1994-03-04 Olympus Optical Co Ltd 強誘電体メモリ装置
US5432731A (en) * 1993-03-08 1995-07-11 Motorola, Inc. Ferroelectric memory cell and method of sensing and writing the polarization state thereof
US5430671A (en) * 1993-04-09 1995-07-04 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
US5406510A (en) * 1993-07-15 1995-04-11 Symetrix Corporation Non-volatile memory
JP3191549B2 (ja) * 1994-02-15 2001-07-23 松下電器産業株式会社 半導体メモリ装置
JP3191550B2 (ja) * 1994-02-15 2001-07-23 松下電器産業株式会社 半導体メモリ装置
US5572459A (en) * 1994-09-16 1996-11-05 Ramtron International Corporation Voltage reference for a ferroelectric 1T/1C based memory
US5598366A (en) * 1995-08-16 1997-01-28 Ramtron International Corporation Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers

Also Published As

Publication number Publication date
EP0847059A4 (en) 1998-11-18
DE69706947T2 (de) 2002-03-28
KR100441837B1 (ko) 2004-10-14
WO1997040500A1 (fr) 1997-10-30
US6038160A (en) 2000-03-14
CN1189234A (zh) 1998-07-29
EP0847059A2 (en) 1998-06-10
EP0847059B1 (en) 2001-09-26
DE69706947D1 (de) 2001-10-31
KR19990028224A (ko) 1999-04-15
CN1119812C (zh) 2003-08-27
JPH09288891A (ja) 1997-11-04

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees