EP0326183A3 - Pseudo-static random access memory - Google Patents

Pseudo-static random access memory Download PDF

Info

Publication number
EP0326183A3
EP0326183A3 EP19890101571 EP89101571A EP0326183A3 EP 0326183 A3 EP0326183 A3 EP 0326183A3 EP 19890101571 EP19890101571 EP 19890101571 EP 89101571 A EP89101571 A EP 89101571A EP 0326183 A3 EP0326183 A3 EP 0326183A3
Authority
EP
European Patent Office
Prior art keywords
pseudo
self
refreshing
mode
random access
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19890101571
Other languages
German (de)
French (fr)
Other versions
EP0326183A2 (en
EP0326183B1 (en
Inventor
Akira Nec Ic Microcomputer System Ltd. Tsujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP0326183A2 publication Critical patent/EP0326183A2/en
Publication of EP0326183A3 publication Critical patent/EP0326183A3/en
Application granted granted Critical
Publication of EP0326183B1 publication Critical patent/EP0326183B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

A pseudo-static RAM device is disclosed which operates fast in the reading or writing mode and permits a long refreshing period in the self-refreshing mode. In the pseudo-static RAM of the present invention, an activation signal for enabling the sense amplifiers is generated with a variable delay time, from a time point when a designated word line is driven. The delay time is switched to be such a long one in response to a control signal representing the self-refreshing mode that is enough to transfer 100% of the amount of information stored in the designated, driven memory cell to the bit line connected thereto, and is maintained short when the control signal representing the self-refreshing mode is not present.
EP89101571A 1988-01-29 1989-01-30 Pseudo-static random access memory Expired - Lifetime EP0326183B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20275/88 1988-01-29
JP63020275A JPH01194194A (en) 1988-01-29 1988-01-29 Semiconductor memory device

Publications (3)

Publication Number Publication Date
EP0326183A2 EP0326183A2 (en) 1989-08-02
EP0326183A3 true EP0326183A3 (en) 1992-02-26
EP0326183B1 EP0326183B1 (en) 1994-12-07

Family

ID=12022622

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89101571A Expired - Lifetime EP0326183B1 (en) 1988-01-29 1989-01-30 Pseudo-static random access memory

Country Status (4)

Country Link
US (1) US5033026A (en)
EP (1) EP0326183B1 (en)
JP (1) JPH01194194A (en)
DE (1) DE68919718T2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2744115B2 (en) * 1990-05-21 1998-04-28 株式会社東芝 Control circuit of pseudo static RAM
EP0467638B1 (en) * 1990-07-17 1997-05-07 Nec Corporation Semiconductor memory device
JPH04372790A (en) * 1991-06-21 1992-12-25 Sharp Corp Semiconductor memory
JPH05128856A (en) * 1991-10-31 1993-05-25 Nec Ic Microcomput Syst Ltd Semiconductor memory
KR950002724B1 (en) * 1992-03-13 1995-03-24 삼성전자주식회사 Contorl circuit of data retension(dr) mode
JPH06282985A (en) * 1993-03-30 1994-10-07 Hitachi Ltd Dynamic type ram
US5392251A (en) * 1993-07-13 1995-02-21 Micron Semiconductor, Inc. Controlling dynamic memory refresh cycle time
US5668769A (en) * 1995-11-21 1997-09-16 Texas Instruments Incorporated Memory device performance by delayed power-down
US5596545A (en) * 1995-12-04 1997-01-21 Ramax, Inc. Semiconductor memory device with internal self-refreshing
KR100328833B1 (en) * 1999-09-07 2002-03-14 박종섭 Sense amplifier control signal generating circuit of semiconductor memory
US6269041B1 (en) * 2000-05-03 2001-07-31 Sunplus Technology Co., Ltd. Embedded auto-refresh circuit for pseudo static random access memory
JP2002216477A (en) * 2001-01-15 2002-08-02 Sony Corp Memory device
KR100437607B1 (en) * 2001-09-14 2004-06-30 주식회사 하이닉스반도체 Refresh generation circuit of semiconductor memory device
JP2003196977A (en) 2001-12-27 2003-07-11 Fujitsu Ltd Data access method for semiconductor memory and semiconductor memory
KR100431303B1 (en) 2002-06-28 2004-05-12 주식회사 하이닉스반도체 A pseudo sram which is capable of accomplishing page write mode
US7099221B2 (en) * 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
US7116602B2 (en) * 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
KR100818725B1 (en) 2006-08-29 2008-04-01 삼성전자주식회사 Multi-port semiconductor memory device having shared bank, semiconductor memory system having the same, and Refresh method thereof
US7894289B2 (en) * 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
US7900120B2 (en) 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
US4553053A (en) * 1983-10-03 1985-11-12 Honeywell Information Systems Inc. Sense amplifier
US4687951A (en) * 1984-10-29 1987-08-18 Texas Instruments Incorporated Fuse link for varying chip operating parameters
EP0242572A2 (en) * 1986-03-27 1987-10-28 Kabushiki Kaisha Toshiba Delay circuit of a variable delay time
US4716551A (en) * 1983-09-14 1987-12-29 Nec Corporation Semiconductor memory device with variable self-refresh cycle

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998341A (en) * 1982-11-26 1984-06-06 Hitachi Ltd Delaying circuit
JPH0762958B2 (en) * 1983-06-03 1995-07-05 株式会社日立製作所 MOS storage device
JPS60246096A (en) * 1984-05-21 1985-12-05 Hitachi Ltd Dynamic ram
JPH0799628B2 (en) * 1987-10-05 1995-10-25 三菱電機株式会社 Semiconductor memory device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
US4716551A (en) * 1983-09-14 1987-12-29 Nec Corporation Semiconductor memory device with variable self-refresh cycle
US4553053A (en) * 1983-10-03 1985-11-12 Honeywell Information Systems Inc. Sense amplifier
US4687951A (en) * 1984-10-29 1987-08-18 Texas Instruments Incorporated Fuse link for varying chip operating parameters
EP0242572A2 (en) * 1986-03-27 1987-10-28 Kabushiki Kaisha Toshiba Delay circuit of a variable delay time

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 8, no. 214 (P-304)29 September 1984 & JP-A-59 098 341 ( HITACHI SEISAKUSHO KK ) 6 June 1984 *

Also Published As

Publication number Publication date
JPH01194194A (en) 1989-08-04
EP0326183A2 (en) 1989-08-02
DE68919718T2 (en) 1995-07-06
US5033026A (en) 1991-07-16
DE68919718D1 (en) 1995-01-19
EP0326183B1 (en) 1994-12-07

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