EP0326183A3 - Pseudo-statischer Direktzugriffspeicher - Google Patents

Pseudo-statischer Direktzugriffspeicher Download PDF

Info

Publication number
EP0326183A3
EP0326183A3 EP19890101571 EP89101571A EP0326183A3 EP 0326183 A3 EP0326183 A3 EP 0326183A3 EP 19890101571 EP19890101571 EP 19890101571 EP 89101571 A EP89101571 A EP 89101571A EP 0326183 A3 EP0326183 A3 EP 0326183A3
Authority
EP
European Patent Office
Prior art keywords
pseudo
self
refreshing
mode
random access
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19890101571
Other languages
English (en)
French (fr)
Other versions
EP0326183B1 (de
EP0326183A2 (de
Inventor
Akira Nec Ic Microcomputer System Ltd. Tsujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP0326183A2 publication Critical patent/EP0326183A2/de
Publication of EP0326183A3 publication Critical patent/EP0326183A3/de
Application granted granted Critical
Publication of EP0326183B1 publication Critical patent/EP0326183B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
EP89101571A 1988-01-29 1989-01-30 Pseudo-statischer Direktzugriffspeicher Expired - Lifetime EP0326183B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20275/88 1988-01-29
JP63020275A JPH01194194A (ja) 1988-01-29 1988-01-29 半導体メモリ装置

Publications (3)

Publication Number Publication Date
EP0326183A2 EP0326183A2 (de) 1989-08-02
EP0326183A3 true EP0326183A3 (de) 1992-02-26
EP0326183B1 EP0326183B1 (de) 1994-12-07

Family

ID=12022622

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89101571A Expired - Lifetime EP0326183B1 (de) 1988-01-29 1989-01-30 Pseudo-statischer Direktzugriffspeicher

Country Status (4)

Country Link
US (1) US5033026A (de)
EP (1) EP0326183B1 (de)
JP (1) JPH01194194A (de)
DE (1) DE68919718T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2744115B2 (ja) * 1990-05-21 1998-04-28 株式会社東芝 疑似スタティックｒａｍの制御回路
EP0467638B1 (de) * 1990-07-17 1997-05-07 Nec Corporation Halbleiterspeicheranordnung
JPH04372790A (ja) * 1991-06-21 1992-12-25 Sharp Corp 半導体記憶装置
JPH05128856A (ja) * 1991-10-31 1993-05-25 Nec Ic Microcomput Syst Ltd 半導体記憶装置
KR950002724B1 (ko) * 1992-03-13 1995-03-24 삼성전자주식회사 데이타 리텐션(dr)모드 컨트롤 회로
JPH06282985A (ja) * 1993-03-30 1994-10-07 Hitachi Ltd ダイナミック型ｒａｍ
US5392251A (en) * 1993-07-13 1995-02-21 Micron Semiconductor, Inc. Controlling dynamic memory refresh cycle time
US5668769A (en) * 1995-11-21 1997-09-16 Texas Instruments Incorporated Memory device performance by delayed power-down
US5596545A (en) * 1995-12-04 1997-01-21 Ramax, Inc. Semiconductor memory device with internal self-refreshing
KR100328833B1 (ko) * 1999-09-07 2002-03-14 박종섭 반도체 메모리의 센스앰프 제어신호 발생회로
US6269041B1 (en) * 2000-05-03 2001-07-31 Sunplus Technology Co., Ltd. Embedded auto-refresh circuit for pseudo static random access memory
JP2002216477A (ja) * 2001-01-15 2002-08-02 Sony Corp メモリ装置
KR100437607B1 (ko) * 2001-09-14 2004-06-30 주식회사 하이닉스반도체 반도체 메모리 장치의 리프레쉬 발생회로
JP2003196977A (ja) 2001-12-27 2003-07-11 Fujitsu Ltd 半導体記憶装置のデータアクセス方法、及び半導体記憶装置
KR100431303B1 (ko) 2002-06-28 2004-05-12 주식회사 하이닉스반도체 페이지 기록 모드를 수행할 수 있는 슈도 스태틱램
US7099221B2 (en) * 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
US7116602B2 (en) * 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
KR100818725B1 (ko) 2006-08-29 2008-04-01 삼성전자주식회사 공유 뱅크를 가지는 멀티 포트 반도체 메모리 장치, 상기 반도체 메모리 장치를 포함하는 시스템, 및 그 리프레시 방법
US7894289B2 (en) * 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
US7900120B2 (en) * 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
US4553053A (en) * 1983-10-03 1985-11-12 Honeywell Information Systems Inc. Sense amplifier
US4687951A (en) * 1984-10-29 1987-08-18 Texas Instruments Incorporated Fuse link for varying chip operating parameters
EP0242572A2 (de) * 1986-03-27 1987-10-28 Kabushiki Kaisha Toshiba Verzögerungsschaltung einer veränderlichen Verzögerungszeit
US4716551A (en) * 1983-09-14 1987-12-29 Nec Corporation Semiconductor memory device with variable self-refresh cycle

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998341A (ja) * 1982-11-26 1984-06-06 Hitachi Ltd 遅延回路
JPH0762958B2 (ja) * 1983-06-03 1995-07-05 株式会社日立製作所 Ｍｏｓ記憶装置
JPS60246096A (ja) * 1984-05-21 1985-12-05 Hitachi Ltd ダイナミツク型ｒａｍ
JPH0799628B2 (ja) * 1987-10-05 1995-10-25 三菱電機株式会社 半導体記憶装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
US4716551A (en) * 1983-09-14 1987-12-29 Nec Corporation Semiconductor memory device with variable self-refresh cycle
US4553053A (en) * 1983-10-03 1985-11-12 Honeywell Information Systems Inc. Sense amplifier
US4687951A (en) * 1984-10-29 1987-08-18 Texas Instruments Incorporated Fuse link for varying chip operating parameters
EP0242572A2 (de) * 1986-03-27 1987-10-28 Kabushiki Kaisha Toshiba Verzögerungsschaltung einer veränderlichen Verzögerungszeit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 8, no. 214 (P-304)29 September 1984 & JP-A-59 098 341 ( HITACHI SEISAKUSHO KK ) 6 June 1984 *

Also Published As

Publication number Publication date
EP0326183B1 (de) 1994-12-07
DE68919718D1 (de) 1995-01-19
DE68919718T2 (de) 1995-07-06
JPH01194194A (ja) 1989-08-04
US5033026A (en) 1991-07-16
EP0326183A2 (de) 1989-08-02

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