KR890004434A - 불휘발성 반도체기억장치 및 그 제조방법 - Google Patents

불휘발성 반도체기억장치 및 그 제조방법

Info

Publication number
KR890004434A
KR890004434A KR1019880010816A KR880010816A KR890004434A KR 890004434 A KR890004434 A KR 890004434A KR 1019880010816 A KR1019880010816 A KR 1019880010816A KR 880010816 A KR880010816 A KR 880010816A KR 890004434 A KR890004434 A KR 890004434A
Authority
KR
South Korea
Prior art keywords
manufacturing
memory device
semiconductor memory
nonvolatile semiconductor
nonvolatile
Prior art date
Application number
KR1019880010816A
Other languages
English (en)
Other versions
KR920002091B1 (ko
Inventor
구니요시 요시카와
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR890004434A publication Critical patent/KR890004434A/ko
Application granted granted Critical
Publication of KR920002091B1 publication Critical patent/KR920002091B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019880010816A 1987-08-25 1988-08-25 불휘발성 반도체기억장치 및 그 제조방법 KR920002091B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-210774 1987-08-25
JP62210774A JP2735193B2 (ja) 1987-08-25 1987-08-25 不揮発性半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR890004434A true KR890004434A (ko) 1989-04-22
KR920002091B1 KR920002091B1 (ko) 1992-03-10

Family

ID=16594920

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880010816A KR920002091B1 (ko) 1987-08-25 1988-08-25 불휘발성 반도체기억장치 및 그 제조방법

Country Status (5)

Country Link
US (1) US4929988A (ko)
EP (1) EP0304896B1 (ko)
JP (1) JP2735193B2 (ko)
KR (1) KR920002091B1 (ko)
DE (1) DE3881986T2 (ko)

Families Citing this family (70)

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US6081449A (en) * 1987-05-12 2000-06-27 Altera Corporation High-density nonvolatile memory cell
JP2646563B2 (ja) * 1987-07-15 1997-08-27 ソニー株式会社 不揮発性メモリ装置
JP2646591B2 (ja) * 1987-11-27 1997-08-27 ソニー株式会社 不揮発性メモリ装置
JP2675572B2 (ja) * 1988-03-31 1997-11-12 株式会社東芝 半導体集積回路の製造方法
NL8900989A (nl) * 1989-04-20 1990-11-16 Philips Nv Halfgeleiderinrichting met een in een kunststof omhulling ingebed halfgeleiderlichaam.
JPH02285638A (ja) * 1989-04-27 1990-11-22 Toshiba Corp 半導体装置
JPH07105453B2 (ja) * 1989-07-13 1995-11-13 株式会社東芝 半導体記憶装置のセル構造
US5036378A (en) * 1989-11-01 1991-07-30 At&T Bell Laboratories Memory device
US4964080A (en) * 1990-03-09 1990-10-16 Intel Corporation Three-dimensional memory cell with integral select transistor
US5053842A (en) * 1990-05-30 1991-10-01 Seiko Instruments Inc. Semiconductor nonvolatile memory
US5078498A (en) * 1990-06-29 1992-01-07 Texas Instruments Incorporated Two-transistor programmable memory cell with a vertical floating gate transistor
US5041884A (en) * 1990-10-11 1991-08-20 Mitsubishi Denki Kabushiki Kaisha Multilayer semiconductor integrated circuit
US5258634A (en) * 1991-05-17 1993-11-02 United Microelectronics Corporation Electrically erasable read only memory cell array having elongated control gate in a trench
JPH0567791A (ja) * 1991-06-20 1993-03-19 Mitsubishi Electric Corp 電気的に書込および消去可能な半導体記憶装置およびその製造方法
JPH0613627A (ja) * 1991-10-08 1994-01-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US5196722A (en) * 1992-03-12 1993-03-23 International Business Machines Corporation Shadow ram cell having a shallow trench eeprom
US5467305A (en) * 1992-03-12 1995-11-14 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
US5399516A (en) * 1992-03-12 1995-03-21 International Business Machines Corporation Method of making shadow RAM cell having a shallow trench EEPROM
US5315142A (en) * 1992-03-23 1994-05-24 International Business Machines Corporation High performance trench EEPROM cell
JP2889061B2 (ja) * 1992-09-25 1999-05-10 ローム株式会社 半導体記憶装置およびその製法
US5859455A (en) * 1992-12-31 1999-01-12 Yu; Shih-Chiang Non-volatile semiconductor memory cell with control gate and floating gate and select gate located above the channel
US5460988A (en) * 1994-04-25 1995-10-24 United Microelectronics Corporation Process for high density flash EPROM cell
US5670803A (en) * 1995-02-08 1997-09-23 International Business Machines Corporation Three-dimensional SRAM trench structure and fabrication method therefor
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
US5945705A (en) * 1995-08-01 1999-08-31 Advanced Micro Devices, Inc. Three-dimensional non-volatile memory
US5672524A (en) * 1995-08-01 1997-09-30 Advanced Micro Devices, Inc. Three-dimensional complementary field effect transistor process
JP3403877B2 (ja) * 1995-10-25 2003-05-06 三菱電機株式会社 半導体記憶装置とその製造方法
US5998263A (en) * 1996-05-16 1999-12-07 Altera Corporation High-density nonvolatile memory cell
US5874760A (en) * 1997-01-22 1999-02-23 International Business Machines Corporation 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation
US6034389A (en) * 1997-01-22 2000-03-07 International Business Machines Corporation Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array
US5990509A (en) * 1997-01-22 1999-11-23 International Business Machines Corporation 2F-square memory cell for gigabit memory applications
US5929477A (en) * 1997-01-22 1999-07-27 International Business Machines Corporation Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array
US5909618A (en) 1997-07-08 1999-06-01 Micron Technology, Inc. Method of making memory cell with vertical transistor and buried word and body lines
US5973356A (en) * 1997-07-08 1999-10-26 Micron Technology, Inc. Ultra high density flash memory
US6150687A (en) 1997-07-08 2000-11-21 Micron Technology, Inc. Memory cell having a vertical transistor with buried source/drain and dual gates
US6072209A (en) 1997-07-08 2000-06-06 Micro Technology, Inc. Four F2 folded bit line DRAM cell structure having buried bit and word lines
US6717179B1 (en) 1997-08-19 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
US6667494B1 (en) * 1997-08-19 2003-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
JPH11143379A (ja) * 1997-09-03 1999-05-28 Semiconductor Energy Lab Co Ltd 半導体表示装置補正システムおよび半導体表示装置の補正方法
US6066869A (en) * 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
US6528837B2 (en) * 1997-10-06 2003-03-04 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US5907170A (en) 1997-10-06 1999-05-25 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6025225A (en) * 1998-01-22 2000-02-15 Micron Technology, Inc. Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US5923063A (en) * 1998-02-19 1999-07-13 Advanced Micro Devices, Inc. Double density V nonvolatile memory cell
US6246083B1 (en) 1998-02-24 2001-06-12 Micron Technology, Inc. Vertical gain cell and array for a dynamic random access memory
US5991225A (en) * 1998-02-27 1999-11-23 Micron Technology, Inc. Programmable memory address decode array with vertical transistors
US6124729A (en) 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
US6043527A (en) 1998-04-14 2000-03-28 Micron Technology, Inc. Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device
US6208164B1 (en) 1998-08-04 2001-03-27 Micron Technology, Inc. Programmable logic array with vertical transistors
US6134175A (en) 1998-08-04 2000-10-17 Micron Technology, Inc. Memory address decode array with vertical transistors
US6190968B1 (en) * 1998-11-04 2001-02-20 National Semiconductor Corporation Method for forming EPROM and flash memory cells with source-side injection
US6130453A (en) * 1999-01-04 2000-10-10 International Business Machines Corporation Flash memory structure with floating gate in vertical trench
US6368919B2 (en) * 1999-01-19 2002-04-09 Micron Technology, Inc. Method and composite for decreasing charge leakage
TW518637B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
US6664909B1 (en) 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
US6724028B2 (en) 2001-12-10 2004-04-20 Hans Gude Gudesen Matrix-addressable array of integrated transistor/memory structures
JP2003309192A (ja) * 2002-04-17 2003-10-31 Fujitsu Ltd 不揮発性半導体メモリおよびその製造方法
US6770934B1 (en) * 2003-04-03 2004-08-03 Powerchip Semiconductor Corp. Flash memory device structure and manufacturing method thereof
DE10326523A1 (de) * 2003-06-12 2005-01-13 Infineon Technologies Ag Feldeffekttransistor, insbesondere doppelt diffundierter Feldeffekttransistor, sowie Herstellungsverfahren
US7241654B2 (en) * 2003-12-17 2007-07-10 Micron Technology, Inc. Vertical NROM NAND flash memory array
US7148538B2 (en) 2003-12-17 2006-12-12 Micron Technology, Inc. Vertical NAND flash memory array
KR100526891B1 (ko) * 2004-02-25 2005-11-09 삼성전자주식회사 반도체 소자에서의 버티컬 트랜지스터 구조 및 그에 따른형성방법
KR100587396B1 (ko) * 2004-08-13 2006-06-08 동부일렉트로닉스 주식회사 비휘발성 메모리 소자 및 그의 제조방법
KR100607785B1 (ko) * 2004-12-31 2006-08-02 동부일렉트로닉스 주식회사 스플릿 게이트 플래시 이이피롬의 제조방법
US7166888B2 (en) * 2005-01-27 2007-01-23 Micron Technology, Inc. Scalable high density non-volatile memory cells in a contactless memory array
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CN100452355C (zh) * 2005-08-19 2009-01-14 力晶半导体股份有限公司 非挥发性存储器及其制造方法
CN100385646C (zh) * 2005-08-19 2008-04-30 力晶半导体股份有限公司 防止击穿的半导体元件及其制造方法
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JPS61256673A (ja) * 1985-05-08 1986-11-14 Fujitsu Ltd 半導体装置
JPS6225459A (ja) * 1985-07-25 1987-02-03 Nippon Denso Co Ltd 不揮発性半導体記憶装置
JPS6240774A (ja) * 1985-08-16 1987-02-21 Nippon Denso Co Ltd 不揮発性半導体記憶装置
US4698900A (en) * 1986-03-27 1987-10-13 Texas Instruments Incorporated Method of making a non-volatile memory having dielectric filled trenches

Also Published As

Publication number Publication date
JPS6453577A (en) 1989-03-01
KR920002091B1 (ko) 1992-03-10
US4929988A (en) 1990-05-29
EP0304896B1 (en) 1993-06-23
EP0304896A2 (en) 1989-03-01
DE3881986T2 (de) 1993-09-30
DE3881986D1 (de) 1993-07-29
JP2735193B2 (ja) 1998-04-02
EP0304896A3 (en) 1990-06-13

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