KR860004478A - 반도체 메모리 장치 - Google Patents
반도체 메모리 장치Info
- Publication number
- KR860004478A KR860004478A KR1019850008397A KR850008397A KR860004478A KR 860004478 A KR860004478 A KR 860004478A KR 1019850008397 A KR1019850008397 A KR 1019850008397A KR 850008397 A KR850008397 A KR 850008397A KR 860004478 A KR860004478 A KR 860004478A
- Authority
- KR
- South Korea
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59-249550 | 1984-11-28 | ||
JP59249550A JP2559360B2 (ja) | 1984-11-28 | 1984-11-28 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860004478A true KR860004478A (ko) | 1986-06-23 |
KR900000820B1 KR900000820B1 (ko) | 1990-02-17 |
Family
ID=17194657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850008397A KR900000820B1 (ko) | 1984-11-28 | 1985-11-11 | 반도체 메모리 장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4849801A (ko) |
JP (1) | JP2559360B2 (ko) |
KR (1) | KR900000820B1 (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0693502B2 (ja) * | 1985-05-30 | 1994-11-16 | 日本電気株式会社 | Mos型半導体集積回路装置 |
US5248891A (en) * | 1988-03-25 | 1993-09-28 | Hiroshi Takato | High integration semiconductor device |
US5523968A (en) * | 1988-05-07 | 1996-06-04 | Seiko Epson Corporation | IC semiconductor memory devices with maintained stable operation and lower operating current characteristics |
US5254870A (en) * | 1988-05-07 | 1993-10-19 | Seiko Epson Corporation | Static random access memory having memory cells with electric field shielding for cell load resistances |
US4979195A (en) * | 1988-09-22 | 1990-12-18 | Fujitsu Limited | Vertical stepper |
EP0370407A1 (en) * | 1988-11-18 | 1990-05-30 | Nec Corporation | Semiconductor memory device of one transistor - one capacitor memory cell type |
US5005102A (en) * | 1989-06-20 | 1991-04-02 | Ramtron Corporation | Multilayer electrodes for integrated circuit capacitors |
US5347152A (en) * | 1989-06-30 | 1994-09-13 | Texas Instruments Incorporated | Stacked CMOS latch with cross-coupled capacitors |
KR960006880B1 (ko) * | 1990-05-24 | 1996-05-23 | 가부시키가이샤 도시바 | 반도체 기억장치 |
KR950008385B1 (ko) * | 1990-05-24 | 1995-07-28 | 삼성전자주식회사 | 반도체 소자의 워드라인 형성방법 |
US5057893A (en) * | 1990-09-28 | 1991-10-15 | Motorola, Inc. | Static RAM cell with soft error immunity |
US5514615A (en) * | 1991-03-20 | 1996-05-07 | Fujitsu Limited | Method of producing a semiconductor memory device having thin film transistor load |
US5521859A (en) * | 1991-03-20 | 1996-05-28 | Fujitsu Limited | Semiconductor memory device having thin film transistor and method of producing the same |
US5241206A (en) * | 1991-07-03 | 1993-08-31 | Micron Technology, Inc. | Self-aligned vertical intrinsic resistance |
US5273924A (en) * | 1991-08-30 | 1993-12-28 | Micron Technology, Inc. | Method for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another region |
US5452246A (en) * | 1993-06-02 | 1995-09-19 | Fujitsu Limited | Static semiconductor memory device adapted for stabilization of low-voltage operation and reduction in cell size |
JPH0794600A (ja) * | 1993-06-29 | 1995-04-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5808941A (en) * | 1996-01-04 | 1998-09-15 | Micron Technology, Inc. | SRAM cell employing substantially vertically elongated pull-up resistors |
US5751630A (en) * | 1996-08-29 | 1998-05-12 | Micron Technology, Inc. | SRAM cell employing substantially vertically elongated pull-up resistors |
US5699292A (en) * | 1996-01-04 | 1997-12-16 | Micron Technology, Inc. | SRAM cell employing substantially vertically elongated pull-up resistors |
JPH1126604A (ja) * | 1997-07-03 | 1999-01-29 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2002176112A (ja) * | 2000-12-08 | 2002-06-21 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
US8049279B2 (en) * | 2009-07-06 | 2011-11-01 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
TWI467762B (zh) * | 2009-07-14 | 2015-01-01 | United Microelectronics Corp | 半導體元件及其製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53148989A (en) * | 1977-06-01 | 1978-12-26 | Hitachi Ltd | Mis-type semiconductor memory device |
US4240097A (en) * | 1977-05-31 | 1980-12-16 | Texas Instruments Incorporated | Field-effect transistor structure in multilevel polycrystalline silicon |
US4475118A (en) * | 1978-12-21 | 1984-10-02 | National Semiconductor Corporation | Dynamic MOS RAM with storage cells having a mainly insulated first plate |
US4453175A (en) * | 1979-09-19 | 1984-06-05 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Static RAM layout with polysilicon resistors over FET gates |
DE3163340D1 (en) * | 1980-01-29 | 1984-06-07 | Nec Corp | Semiconductor device |
JPS60781B2 (ja) * | 1980-01-29 | 1985-01-10 | 日本電気株式会社 | 半導体記憶装置 |
JPS602781B2 (ja) * | 1982-03-03 | 1985-01-23 | 富士通株式会社 | 半導体記憶装置 |
JPS58155752A (ja) * | 1982-03-12 | 1983-09-16 | Hitachi Ltd | 半導体記憶装置 |
JPS5923559A (ja) * | 1982-07-30 | 1984-02-07 | Nec Corp | 半導体装置 |
JPS59167051A (ja) * | 1983-03-14 | 1984-09-20 | Nec Corp | 記憶回路装置 |
US4679171A (en) * | 1985-02-07 | 1987-07-07 | Visic, Inc. | MOS/CMOS memory cell |
-
1984
- 1984-11-28 JP JP59249550A patent/JP2559360B2/ja not_active Expired - Lifetime
-
1985
- 1985-11-11 KR KR1019850008397A patent/KR900000820B1/ko not_active IP Right Cessation
-
1987
- 1987-10-27 US US07/113,381 patent/US4849801A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS61128557A (ja) | 1986-06-16 |
JP2559360B2 (ja) | 1996-12-04 |
KR900000820B1 (ko) | 1990-02-17 |
US4849801A (en) | 1989-07-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030107 Year of fee payment: 14 |
|
LAPS | Lapse due to unpaid annual fee |