KR850008756A - 반도체 메모리 장치 - Google Patents

반도체 메모리 장치

Info

Publication number
KR850008756A
KR850008756A KR1019850003732A KR850003732A KR850008756A KR 850008756 A KR850008756 A KR 850008756A KR 1019850003732 A KR1019850003732 A KR 1019850003732A KR 850003732 A KR850003732 A KR 850003732A KR 850008756 A KR850008756 A KR 850008756A
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019850003732A
Other languages
English (en)
Other versions
KR900000051B1 (ko
Inventor
가즈히로 도요다
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR850008756A publication Critical patent/KR850008756A/ko
Application granted granted Critical
Publication of KR900000051B1 publication Critical patent/KR900000051B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
KR1019850003732A 1984-05-30 1985-05-29 반도체 메모리 장치 KR900000051B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-100516 1984-05-30
JP59108516A JPS60253091A (ja) 1984-05-30 1984-05-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR850008756A true KR850008756A (ko) 1985-12-21
KR900000051B1 KR900000051B1 (ko) 1990-01-18

Family

ID=14486769

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850003732A KR900000051B1 (ko) 1984-05-30 1985-05-29 반도체 메모리 장치

Country Status (5)

Country Link
US (1) US4802131A (ko)
EP (1) EP0167275B1 (ko)
JP (1) JPS60253091A (ko)
KR (1) KR900000051B1 (ko)
DE (1) DE3582960D1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62180607A (ja) * 1986-02-04 1987-08-07 Fujitsu Ltd 半導体集積回路
JPH0612631B2 (ja) * 1986-10-17 1994-02-16 日本電気株式会社 半導体メモリ
JP2585602B2 (ja) * 1987-06-10 1997-02-26 株式会社日立製作所 半導体記憶装置
JPH0197014A (ja) * 1987-10-09 1989-04-14 Toshiba Corp 半導体集積回路
JP2701030B2 (ja) * 1987-10-09 1998-01-21 株式会社日立製作所 高速記憶装置の書込制御回路
US4959816A (en) * 1987-12-28 1990-09-25 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
JP2575449B2 (ja) * 1988-02-18 1997-01-22 株式会社東芝 半導体メモリ装置
JP2941817B2 (ja) * 1988-09-14 1999-08-30 株式会社日立製作所 ベクトル処理装置
JP3066595B2 (ja) * 1989-06-20 2000-07-17 日本テキサス・インスツルメンツ株式会社 駆動回路
DE4023404C2 (de) * 1990-07-23 1996-05-15 Castolin Sa Verwendung einer abschmelzbaren Elektrode
US5574866A (en) * 1993-04-05 1996-11-12 Zenith Data Systems Corporation Method and apparatus for providing a data write signal with a programmable duration
US5826063A (en) * 1993-11-08 1998-10-20 Cirrus Logic, Inc. Apparatus and method for programming the setup, command and recovery time periods within a transaction cycle
EP0709774A1 (en) * 1994-10-27 1996-05-01 STMicroelectronics S.r.l. Method and circuit for detecting a fault in a clock signal for microprocessor electronic devices including memory elements
US5815463A (en) * 1997-06-12 1998-09-29 Etron Technology, Inc Flexible time write operation
KR100333703B1 (ko) * 1999-06-30 2002-04-24 박종섭 동기식 디램의 데이터 스트로브 버퍼
US6928026B2 (en) 2002-03-19 2005-08-09 Broadcom Corporation Synchronous global controller for enhanced pipelining

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592116B2 (ja) * 1975-09-12 1984-01-17 株式会社日立製作所 半導体メモリ
JPS6057156B2 (ja) * 1978-05-24 1985-12-13 株式会社日立製作所 半導体メモリ装置
US4337525A (en) * 1979-04-17 1982-06-29 Nippon Electric Co., Ltd. Asynchronous circuit responsive to changes in logic level
JPS5668990A (en) * 1979-11-08 1981-06-09 Nec Corp Memory circuit
JPS55142487A (en) * 1979-04-25 1980-11-07 Hitachi Ltd Bipolar memory circuit
JPS5634186A (en) * 1979-08-29 1981-04-06 Hitachi Ltd Bipolar memory circuit
US4355377A (en) * 1980-06-30 1982-10-19 Inmos Corporation Asynchronously equillibrated and pre-charged static ram
JPS5835783A (ja) * 1981-08-24 1983-03-02 Fujitsu Ltd 半導体メモリ
JPS6052520B2 (ja) * 1981-12-29 1985-11-19 富士通株式会社 半導体記憶装置
JPS58169383A (ja) * 1982-03-30 1983-10-05 Fujitsu Ltd 半導体記憶装置
JPS59140688A (ja) * 1983-01-31 1984-08-13 Hitachi Ltd スタテイツク型ｍｏｓｒａｍ

Also Published As

Publication number Publication date
US4802131A (en) 1989-01-31
JPS60253091A (ja) 1985-12-13
EP0167275A2 (en) 1986-01-08
EP0167275A3 (en) 1986-12-30
DE3582960D1 (de) 1991-07-04
EP0167275B1 (en) 1991-05-29
JPH0453036B2 (ko) 1992-08-25
KR900000051B1 (ko) 1990-01-18

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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Year of fee payment: 7

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