KR880004571A - 프로그램 가능 반도체 메모리 장치 - Google Patents

프로그램 가능 반도체 메모리 장치

Info

Publication number
KR880004571A
KR880004571A KR1019860007531A KR860007531A KR880004571A KR 880004571 A KR880004571 A KR 880004571A KR 1019860007531 A KR1019860007531 A KR 1019860007531A KR 860007531 A KR860007531 A KR 860007531A KR 880004571 A KR880004571 A KR 880004571A
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
programmable semiconductor
programmable
semiconductor
Prior art date
Application number
KR1019860007531A
Other languages
English (en)
Other versions
KR900008019B1 (ko
Inventor
도시다까 후꾸시마
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR880004571A publication Critical patent/KR880004571A/ko
Application granted granted Critical
Publication of KR900008019B1 publication Critical patent/KR900008019B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1019860007531A 1985-09-09 1986-09-09 프로그램 가능 반도체 메모리 장치 KR900008019B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-198760 1985-09-09
JP60198760A JPS6258673A (ja) 1985-09-09 1985-09-09 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR880004571A true KR880004571A (ko) 1988-06-07
KR900008019B1 KR900008019B1 (ko) 1990-10-29

Family

ID=16396493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860007531A KR900008019B1 (ko) 1985-09-09 1986-09-09 프로그램 가능 반도체 메모리 장치

Country Status (4)

Country Link
US (1) US4922319A (ko)
EP (1) EP0216246A1 (ko)
JP (1) JPS6258673A (ko)
KR (1) KR900008019B1 (ko)

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US5882993A (en) 1996-08-19 1999-03-16 Advanced Micro Devices, Inc. Integrated circuit with differing gate oxide thickness and process for making same
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US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
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US6624011B1 (en) * 2000-08-14 2003-09-23 Matrix Semiconductor, Inc. Thermal processing for three dimensional circuits
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
US6627530B2 (en) 2000-12-22 2003-09-30 Matrix Semiconductor, Inc. Patterning three dimensional structures
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US6817531B2 (en) * 2001-03-07 2004-11-16 Hewlett-Packard Development Company, L.P. Apparatus and methods for marking content of memory storage devices
US6545898B1 (en) 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
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US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
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US7067850B2 (en) * 2001-10-16 2006-06-27 Midwest Research Institute Stacked switchable element and diode combination
US6700151B2 (en) * 2001-10-17 2004-03-02 Kilopass Technologies, Inc. Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
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US20060249753A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
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US7663473B2 (en) * 2004-02-12 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, bills, securities, passport, electronic apparatus, bag, and clothes
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KR101067412B1 (ko) * 2009-10-27 2011-09-27 서울대학교산학협력단 일회 프로그램 가능한 비휘발성 메모리 어레이와 그 동작 및 제조방법
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

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Also Published As

Publication number Publication date
KR900008019B1 (ko) 1990-10-29
EP0216246A1 (en) 1987-04-01
US4922319A (en) 1990-05-01
JPS6258673A (ja) 1987-03-14

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E902 Notification of reason for refusal
G160 Decision to publish patent application
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