DE3486418D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE3486418D1
DE3486418D1 DE3486418T DE3486418T DE3486418D1 DE 3486418 D1 DE3486418 D1 DE 3486418D1 DE 3486418 T DE3486418 T DE 3486418T DE 3486418 T DE3486418 T DE 3486418T DE 3486418 D1 DE3486418 D1 DE 3486418D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3486418T
Other languages
English (en)
Other versions
DE3486418T2 (de
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58191039A external-priority patent/JPS6083374A/ja
Priority claimed from JP59035116A external-priority patent/JPS60179999A/ja
Priority claimed from JP59038829A external-priority patent/JPS60185296A/ja
Priority claimed from JP59038832A external-priority patent/JPS60185299A/ja
Priority claimed from JP59038827A external-priority patent/JPS60185294A/ja
Priority claimed from JP59038831A external-priority patent/JPS60185298A/ja
Priority claimed from JP59038828A external-priority patent/JPS60185295A/ja
Priority claimed from JP59038830A external-priority patent/JPS60185297A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3486418D1 publication Critical patent/DE3486418D1/de
Publication of DE3486418T2 publication Critical patent/DE3486418T2/de
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
DE3486418T 1983-10-14 1984-10-12 Halbleiterspeicheranordnung Expired - Fee Related DE3486418T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP58191039A JPS6083374A (ja) 1983-10-14 1983-10-14 半導体記憶装置
JP59035116A JPS60179999A (ja) 1984-02-28 1984-02-28 不揮発性半導体記憶装置
JP59038832A JPS60185299A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置
JP59038827A JPS60185294A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置
JP59038831A JPS60185298A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置
JP59038829A JPS60185296A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置
JP59038828A JPS60185295A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置
JP59038830A JPS60185297A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置

Publications (2)

Publication Number Publication Date
DE3486418D1 true DE3486418D1 (de) 1996-02-08
DE3486418T2 DE3486418T2 (de) 1996-05-15

Family

ID=27572177

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8484306978T Expired - Fee Related DE3486094T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung.
DE3486418T Expired - Fee Related DE3486418T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE8484306978T Expired - Fee Related DE3486094T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung.

Country Status (3)

Country Link
US (1) US4630238A (de)
EP (2) EP0147019B1 (de)
DE (2) DE3486094T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61246995A (ja) * 1985-04-24 1986-11-04 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
JPS62217493A (ja) * 1986-02-27 1987-09-24 Fujitsu Ltd 半導体不揮発性記憶装置
US4701883A (en) * 1986-06-19 1987-10-20 Motorola Inc. ECL/CMOS memory cell with separate read and write bit lines
US5189641A (en) * 1987-06-08 1993-02-23 Fujitsu Limited Non-volatile random access memory device
US4809225A (en) * 1987-07-02 1989-02-28 Ramtron Corporation Memory cell with volatile and non-volatile portions having ferroelectric capacitors
JPS6414798A (en) * 1987-07-09 1989-01-18 Fujitsu Ltd Non-volatile memory device
JP2645417B2 (ja) * 1987-09-19 1997-08-25 富士通株式会社 不揮発性メモリ装置
US5434811A (en) * 1987-11-19 1995-07-18 National Semiconductor Corporation Non-destructive read ferroelectric based memory circuit
JPH01214993A (ja) * 1988-02-23 1989-08-29 Nissan Motor Co Ltd データ記憶装置
JP3247402B2 (ja) * 1991-07-25 2002-01-15 株式会社東芝 半導体装置及び不揮発性半導体記憶装置
JP4802415B2 (ja) * 2001-08-13 2011-10-26 日本テキサス・インスツルメンツ株式会社 強誘電体メモリ
US7050323B2 (en) * 2002-08-29 2006-05-23 Texas Instruments Incorporated Ferroelectric memory
US7099189B1 (en) * 2004-10-05 2006-08-29 Actel Corporation SRAM cell controlled by non-volatile memory cell
JP5076462B2 (ja) * 2005-12-28 2012-11-21 ソニー株式会社 半導体メモリデバイス
FR2920590B1 (fr) 2007-08-28 2009-11-20 New Imaging Technologies Sas Pixel actif cmos a tres grande dynamique de fonctionnement
US8107290B2 (en) * 2008-04-01 2012-01-31 The Regents Of The University Of Michigan Memory cell structure, a memory device employing such a memory cell structure, and an integrated circuit having such a memory device
US9672911B2 (en) * 2015-08-25 2017-06-06 Nxp Usa, Inc. Static random access memory (SRAM) with programmable resistive elements

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4274012A (en) * 1979-01-24 1981-06-16 Xicor, Inc. Substrate coupled floating gate memory cell
GB2042296B (en) * 1979-01-24 1983-05-11 Xicor Inc Nonvolatile static random access/memory device
US4400799A (en) * 1981-09-08 1983-08-23 Intel Corporation Non-volatile memory cell
US4408303A (en) * 1981-12-28 1983-10-04 Mostek Corporation Directly-coupled and capacitively coupled nonvolatile static RAM cell
US4420821A (en) * 1982-02-19 1983-12-13 International Business Machines Corporation Static RAM with non-volatile back-up storage and method of operation thereof
US4449205A (en) * 1982-02-19 1984-05-15 International Business Machines Corp. Dynamic RAM with non-volatile back-up storage and method of operation thereof
US4527258A (en) * 1982-09-30 1985-07-02 Mostek Corporation E2 PROM having bulk storage

Also Published As

Publication number Publication date
EP0481532A2 (de) 1992-04-22
DE3486094T2 (de) 1993-06-17
EP0147019A2 (de) 1985-07-03
US4630238A (en) 1986-12-16
EP0147019A3 (en) 1988-08-24
EP0481532A3 (en) 1992-09-16
EP0481532B1 (de) 1995-12-27
DE3486094D1 (de) 1993-04-15
DE3486418T2 (de) 1996-05-15
EP0147019B1 (de) 1993-03-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee