KR860006106A - 반도체 메모리 - Google Patents
반도체 메모리Info
- Publication number
- KR860006106A KR860006106A KR1019860000382A KR860000382A KR860006106A KR 860006106 A KR860006106 A KR 860006106A KR 1019860000382 A KR1019860000382 A KR 1019860000382A KR 860000382 A KR860000382 A KR 860000382A KR 860006106 A KR860006106 A KR 860006106A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Memory System (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60-9046 | 1985-01-23 | ||
JP60009046A JPH0652632B2 (ja) | 1985-01-23 | 1985-01-23 | ダイナミツク型ram |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860006106A true KR860006106A (ko) | 1986-08-18 |
KR940001493B1 KR940001493B1 (ko) | 1994-02-23 |
Family
ID=11709698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860000382A KR940001493B1 (ko) | 1985-01-23 | 1986-01-22 | 반도체 메모리 |
Country Status (3)
Country | Link |
---|---|
US (2) | US4758995A (ko) |
JP (1) | JPH0652632B2 (ko) |
KR (1) | KR940001493B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100680457B1 (ko) * | 2004-05-31 | 2007-02-08 | 주식회사 하이닉스반도체 | 난드 플래시 메모리 소자의 데이터 출력 회로 및 이를이용한 데이터 출력 방법 |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0652632B2 (ja) * | 1985-01-23 | 1994-07-06 | 株式会社日立製作所 | ダイナミツク型ram |
US4984217A (en) * | 1985-01-23 | 1991-01-08 | Hitachi, Ltd. | Semiconductor memory |
JPS6364697A (ja) * | 1986-09-04 | 1988-03-23 | Fujitsu Ltd | 記憶装置 |
JPS6364698A (ja) * | 1986-09-04 | 1988-03-23 | Fujitsu Ltd | 記憶装置 |
JPS63184184A (ja) * | 1987-01-26 | 1988-07-29 | Tokyo Keiki Co Ltd | メモリパツケ−ジシステム |
US4931999A (en) * | 1987-07-27 | 1990-06-05 | Mitsubishi Denki Kabushiki Kaisha | Access circuit for a semiconductor memory |
JPH0760595B2 (ja) * | 1988-01-12 | 1995-06-28 | 日本電気株式会社 | 半導体メモリ |
US5053652A (en) * | 1988-01-28 | 1991-10-01 | Hitachi, Ltd. | High speed sensor system using a level shift circuit |
JP2507529B2 (ja) * | 1988-03-31 | 1996-06-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
DE3928902C2 (de) * | 1988-08-31 | 1996-01-25 | Mitsubishi Electric Corp | Halbleiterspeicher und Verfahren zum Betreiben desselben und Verwendung desselben in einem Video-RAM |
JPH02177089A (ja) * | 1988-12-27 | 1990-07-10 | Nec Corp | メモリ回路用の書き込みドライバ回路 |
KR910008101B1 (ko) * | 1988-12-30 | 1991-10-07 | 삼성전자 주식회사 | 반도체 메모리 소자의 피드백형 데이타 출력 회로 |
JPH0814985B2 (ja) * | 1989-06-06 | 1996-02-14 | 富士通株式会社 | 半導体記憶装置 |
US5276856A (en) * | 1989-09-28 | 1994-01-04 | Pixel Semiconductor, Inc. | Memory controller flexible timing control system and method |
JPH0430388A (ja) * | 1990-05-25 | 1992-02-03 | Oki Electric Ind Co Ltd | 半導体記憶回路 |
US5289413A (en) * | 1990-06-08 | 1994-02-22 | Kabushiki Kaisha Toshiba | Dynamic semiconductor memory device with high-speed serial-accessing column decoder |
JPH0469894A (ja) * | 1990-07-09 | 1992-03-05 | Fujitsu Ltd | 半導体記憶装置 |
WO1992013348A1 (en) * | 1991-01-22 | 1992-08-06 | Fujitsu Limited | Semiconductor storing device |
DE4114744C1 (ko) * | 1991-05-06 | 1992-05-27 | Siemens Ag, 8000 Muenchen, De | |
DE69126962D1 (de) * | 1991-05-16 | 1997-09-04 | Ibm | Speicheranordnung |
US5297092A (en) * | 1992-06-03 | 1994-03-22 | Mips Computer Systems, Inc. | Sense amp for bit line sensing and data latching |
US5384503A (en) * | 1992-09-09 | 1995-01-24 | Shu; Lee-Lean | SRAM with current-mode read data path |
KR960006271B1 (ko) * | 1993-08-14 | 1996-05-13 | 삼성전자주식회사 | 고속동작을 위한 입출력라인구동방식을 가지는 반도체메모리장치 |
US5526320A (en) | 1994-12-23 | 1996-06-11 | Micron Technology Inc. | Burst EDO memory device |
US6525971B2 (en) * | 1995-06-30 | 2003-02-25 | Micron Technology, Inc. | Distributed write data drivers for burst access memories |
US6804760B2 (en) | 1994-12-23 | 2004-10-12 | Micron Technology, Inc. | Method for determining a type of memory present in a system |
US7681005B1 (en) * | 1996-01-11 | 2010-03-16 | Micron Technology, Inc. | Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation |
JP3768608B2 (ja) * | 1996-01-30 | 2006-04-19 | 株式会社日立製作所 | 半導体装置および半導体記憶装置 |
US6981126B1 (en) | 1996-07-03 | 2005-12-27 | Micron Technology, Inc. | Continuous interleave burst access |
US6401186B1 (en) | 1996-07-03 | 2002-06-04 | Micron Technology, Inc. | Continuous burst memory which anticipates a next requested start address |
US6167486A (en) | 1996-11-18 | 2000-12-26 | Nec Electronics, Inc. | Parallel access virtual channel memory system with cacheable channels |
US5856947A (en) * | 1997-08-27 | 1999-01-05 | S3 Incorporated | Integrated DRAM with high speed interleaving |
US7103742B1 (en) | 1997-12-03 | 2006-09-05 | Micron Technology, Inc. | Burst/pipelined edo memory device |
KR100278653B1 (ko) | 1998-01-23 | 2001-02-01 | 윤종용 | 이중 데이터율 모드 반도체 메모리 장치 |
US6708254B2 (en) | 1999-11-10 | 2004-03-16 | Nec Electronics America, Inc. | Parallel access virtual channel memory system |
US6563743B2 (en) | 2000-11-27 | 2003-05-13 | Hitachi, Ltd. | Semiconductor device having dummy cells and semiconductor device having dummy cells for redundancy |
US6649425B2 (en) * | 2001-04-04 | 2003-11-18 | Sun Microsystems, Inc. | Method to reduce leakage during a semi-conductor burn-in procedure |
US7643371B2 (en) * | 2006-12-28 | 2010-01-05 | Spansion Llc | Address/data multiplexed device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4567579A (en) * | 1983-07-08 | 1986-01-28 | Texas Instruments Incorporated | Dynamic memory with high speed nibble mode |
US4618947B1 (en) * | 1984-07-26 | 1998-01-06 | Texas Instruments Inc | Dynamic memory with improved address counter for serial modes |
JPH0652632B2 (ja) * | 1985-01-23 | 1994-07-06 | 株式会社日立製作所 | ダイナミツク型ram |
-
1985
- 1985-01-23 JP JP60009046A patent/JPH0652632B2/ja not_active Expired - Lifetime
-
1986
- 1986-01-21 US US06/820,326 patent/US4758995A/en not_active Expired - Lifetime
- 1986-01-22 KR KR1019860000382A patent/KR940001493B1/ko not_active IP Right Cessation
-
1988
- 1988-07-01 US US07/214,542 patent/US4899312A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100680457B1 (ko) * | 2004-05-31 | 2007-02-08 | 주식회사 하이닉스반도체 | 난드 플래시 메모리 소자의 데이터 출력 회로 및 이를이용한 데이터 출력 방법 |
Also Published As
Publication number | Publication date |
---|---|
US4899312A (en) | 1990-02-06 |
JPH0652632B2 (ja) | 1994-07-06 |
US4758995A (en) | 1988-07-19 |
JPS61170994A (ja) | 1986-08-01 |
KR940001493B1 (ko) | 1994-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20020208 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |