DE3581773D1 - Halbleiterspeichervorrichtung. - Google Patents

Halbleiterspeichervorrichtung.

Info

Publication number
DE3581773D1
DE3581773D1 DE8585306065T DE3581773T DE3581773D1 DE 3581773 D1 DE3581773 D1 DE 3581773D1 DE 8585306065 T DE8585306065 T DE 8585306065T DE 3581773 T DE3581773 T DE 3581773T DE 3581773 D1 DE3581773 D1 DE 3581773D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585306065T
Other languages
English (en)
Inventor
Katsuhiko C O Patent Div Hieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3581773D1 publication Critical patent/DE3581773D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE8585306065T 1984-08-27 1985-08-27 Halbleiterspeichervorrichtung. Expired - Lifetime DE3581773D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59178071A JPS6155957A (ja) 1984-08-27 1984-08-27 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3581773D1 true DE3581773D1 (de) 1991-03-28

Family

ID=16042106

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585306065T Expired - Lifetime DE3581773D1 (de) 1984-08-27 1985-08-27 Halbleiterspeichervorrichtung.

Country Status (5)

Country Link
US (1) US5012308A (de)
EP (1) EP0176254B1 (de)
JP (1) JPS6155957A (de)
KR (1) KR900000181B1 (de)
DE (1) DE3581773D1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225697A (en) * 1984-09-27 1993-07-06 Texas Instruments, Incorporated dRAM cell and method
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
JPS61274356A (ja) * 1985-05-29 1986-12-04 Fujitsu Ltd 半導体記憶装置
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US6028346A (en) * 1986-04-25 2000-02-22 Mitsubishi Denki Kabushiki Kaisha Isolated trench semiconductor device
US4811067A (en) * 1986-05-02 1989-03-07 International Business Machines Corporation High density vertically structured memory
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US5250458A (en) * 1987-02-25 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing semiconductor memory device having stacked memory capacitors
JPS63229846A (ja) * 1987-03-19 1988-09-26 Nec Corp 半導体装置の製造方法
JPH0795568B2 (ja) * 1987-04-27 1995-10-11 日本電気株式会社 半導体記憶装置
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
KR910007181B1 (ko) * 1988-09-22 1991-09-19 현대전자산업 주식회사 Sdtas구조로 이루어진 dram셀 및 그 제조방법
DE4042501C2 (de) * 1989-05-22 1994-09-22 Mitsubishi Electric Corp Halbleiterspeichereinrichtung und Verfahren zu deren Herstellung
US5185284A (en) * 1989-05-22 1993-02-09 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
JPH0770618B2 (ja) * 1989-05-22 1995-07-31 三菱電機株式会社 半導体記憶装置およびその製造方法
US5701022A (en) * 1989-05-22 1997-12-23 Siemens Aktiengesellschaft Semiconductor memory device with trench capacitor
KR920004028B1 (ko) * 1989-11-20 1992-05-22 삼성전자 주식회사 반도체 장치 및 그 제조방법
JPH0834243B2 (ja) * 1990-08-31 1996-03-29 富士通株式会社 半導体装置の製造方法
JP2795549B2 (ja) * 1991-03-13 1998-09-10 シャープ株式会社 ダイナミックｒａｍ及びその製造法
US5229310A (en) * 1991-05-03 1993-07-20 Motorola, Inc. Method for making a self-aligned vertical thin-film transistor in a semiconductor device
DE4125199C2 (de) * 1991-07-30 1994-04-28 Siemens Ag Kompakte Halbleiterspeicheranordnung, Verfahren zu deren Herstellung und Speichermatrix
US5936271A (en) * 1994-11-15 1999-08-10 Siemens Aktiengesellschaft Unit cell layout and transfer gate design for high density DRAMs having a trench capacitor with signal electrode composed of three differently doped polysilicon layers
US5998821A (en) * 1997-05-21 1999-12-07 Kabushiki Kaisha Toshiba Dynamic ram structure having a trench capacitor
US5981332A (en) * 1997-09-30 1999-11-09 Siemens Aktiengesellschaft Reduced parasitic leakage in semiconductor devices
DE19813169A1 (de) * 1998-03-25 1999-10-07 Siemens Ag Halbleiterspeicher mit streifenförmiger Zellplatte
US6271557B1 (en) * 1999-10-05 2001-08-07 Infineon Technologies Ag Center node for deep trench capacitors
DE10153315B4 (de) * 2001-10-29 2004-05-19 Infineon Technologies Ag Halbleiterbauelement
JP2003309192A (ja) * 2002-04-17 2003-10-31 Fujitsu Ltd 不揮発性半導体メモリおよびその製造方法
US6664161B2 (en) 2002-05-01 2003-12-16 International Business Machines Corporation Method and structure for salicide trench capacitor plate electrode
DE102004024552B3 (de) * 2004-05-18 2005-12-08 Infineon Technologies Ag Speicherzellenanordnung mit einer Doppel-Speicherzelle
WO2016165516A1 (zh) * 2015-04-17 2016-10-20 苏州东微半导体有限公司 分栅功率器件的制造方法
TWI696285B (zh) * 2019-05-02 2020-06-11 力晶積成電子製造股份有限公司 記憶體結構
US11495604B2 (en) * 2020-07-30 2022-11-08 Micron Technology, Inc. Channel and body region formation for semiconductor devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583260A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタ
JPH0612804B2 (ja) * 1982-06-02 1994-02-16 株式会社東芝 半導体記憶装置
JPH065713B2 (ja) * 1982-06-07 1994-01-19 日本電気株式会社 半導体集積回路装置
JPH0640573B2 (ja) * 1983-12-26 1994-05-25 株式会社日立製作所 半導体集積回路装置
JPS5982761A (ja) * 1982-11-04 1984-05-12 Hitachi Ltd 半導体メモリ
JPS59141262A (ja) * 1983-02-02 1984-08-13 Nec Corp 半導体メモリセル
DE3565339D1 (en) * 1984-04-19 1988-11-03 Nippon Telegraph & Telephone Semiconductor memory device and method of manufacturing the same

Also Published As

Publication number Publication date
KR900000181B1 (ko) 1990-01-23
US5012308A (en) 1991-04-30
EP0176254A2 (de) 1986-04-02
KR860002145A (ko) 1986-03-26
EP0176254B1 (de) 1991-02-20
JPS6155957A (ja) 1986-03-20
EP0176254A3 (en) 1986-12-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee