DE3685361D1 - Halbleiterspeichervorrichtung. - Google Patents

Halbleiterspeichervorrichtung.

Info

Publication number
DE3685361D1
DE3685361D1 DE8686301758T DE3685361T DE3685361D1 DE 3685361 D1 DE3685361 D1 DE 3685361D1 DE 8686301758 T DE8686301758 T DE 8686301758T DE 3685361 T DE3685361 T DE 3685361T DE 3685361 D1 DE3685361 D1 DE 3685361D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686301758T
Other languages
English (en)
Inventor
Masashi C O Patent Divisi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3685361D1 publication Critical patent/DE3685361D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8686301758T 1985-04-16 1986-03-11 Halbleiterspeichervorrichtung. Expired - Lifetime DE3685361D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60080619A JPH0682800B2 (ja) 1985-04-16 1985-04-16 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3685361D1 true DE3685361D1 (de) 1992-06-25

Family

ID=13723358

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686301758T Expired - Lifetime DE3685361D1 (de) 1985-04-16 1986-03-11 Halbleiterspeichervorrichtung.

Country Status (5)

Country Link
US (3) US5001078A (de)
EP (1) EP0198590B1 (de)
JP (1) JPH0682800B2 (de)
KR (1) KR900001225B1 (de)
DE (1) DE3685361D1 (de)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225697A (en) * 1984-09-27 1993-07-06 Texas Instruments, Incorporated dRAM cell and method
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
JPH0680805B2 (ja) * 1985-05-29 1994-10-12 日本電気株式会社 Ｍｉｓ型半導体記憶装置
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US4769786A (en) * 1986-07-15 1988-09-06 International Business Machines Corporation Two square memory cells
JPS6351667A (ja) * 1986-08-21 1988-03-04 Matsushita Electronics Corp 半導体記憶装置
US4959698A (en) * 1986-10-08 1990-09-25 Mitsubishi Denki Kabushiki Kaisha Memory cell of a semiconductor memory device
US4785337A (en) * 1986-10-17 1988-11-15 International Business Machines Corporation Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
JPS63115367A (ja) * 1986-11-04 1988-05-19 Matsushita Electronics Corp 半導体装置の製造方法
JPS63211750A (ja) * 1987-02-27 1988-09-02 Mitsubishi Electric Corp 半導体記憶装置
US4830978A (en) * 1987-03-16 1989-05-16 Texas Instruments Incorporated Dram cell and method
US4916524A (en) * 1987-03-16 1990-04-10 Texas Instruments Incorporated Dram cell and method
JPH0795568B2 (ja) * 1987-04-27 1995-10-11 日本電気株式会社 半導体記憶装置
US5200353A (en) * 1987-06-29 1993-04-06 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having trench capacitor
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
JP2506830B2 (ja) * 1987-10-21 1996-06-12 松下電器産業株式会社 半導体装置の製造方法
JPH01125858A (ja) * 1987-11-10 1989-05-18 Fujitsu Ltd 半導体装置およびその製造方法
US5183774A (en) * 1987-11-17 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
JPH01143254A (ja) * 1987-11-28 1989-06-05 Mitsubishi Electric Corp 半導体記憶装置
JP2606857B2 (ja) * 1987-12-10 1997-05-07 株式会社日立製作所 半導体記憶装置の製造方法
JPH01227468A (ja) * 1988-03-08 1989-09-11 Oki Electric Ind Co Ltd 半導体記憶装置
DE68926793T2 (de) * 1988-03-15 1997-01-09 Toshiba Kawasaki Kk Dynamischer RAM
JPH07105477B2 (ja) * 1988-05-28 1995-11-13 富士通株式会社 半導体装置及びその製造方法
US5106776A (en) * 1988-06-01 1992-04-21 Texas Instruments Incorporated Method of making high performance composed pillar dRAM cell
US5103276A (en) * 1988-06-01 1992-04-07 Texas Instruments Incorporated High performance composed pillar dram cell
US4926224A (en) * 1988-06-03 1990-05-15 Texas Instruments Incorporated Crosspoint dynamic ram cell for folded bitline array
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US4977436A (en) * 1988-07-25 1990-12-11 Motorola, Inc. High density DRAM
US4927779A (en) * 1988-08-10 1990-05-22 International Business Machines Corporation Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor
US4894697A (en) * 1988-10-31 1990-01-16 International Business Machines Corporation Ultra dense dram cell and its method of fabrication
US4920065A (en) * 1988-10-31 1990-04-24 International Business Machines Corporation Method of making ultra dense dram cells
US4945069A (en) * 1988-12-16 1990-07-31 Texas Instruments, Incorporated Organic space holder for trench processing
US5084418A (en) * 1988-12-27 1992-01-28 Texas Instruments Incorporated Method of making an array device with buried interconnects
FR2658952A1 (fr) * 1990-02-27 1991-08-30 Thomson Csf Procede de realisation de memoires haute densite.
JPH03278573A (ja) * 1990-03-28 1991-12-10 Mitsubishi Electric Corp 半導体記憶装置
US5034787A (en) * 1990-06-28 1991-07-23 International Business Machines Corporation Structure and fabrication method for a double trench memory cell device
US5156992A (en) * 1991-06-25 1992-10-20 Texas Instruments Incorporated Process for forming poly-sheet pillar transistor DRAM cell
KR940000513B1 (ko) * 1991-08-21 1994-01-21 현대전자산업 주식회사 Dram셀 및 그 제조방법
US5214301A (en) * 1991-09-30 1993-05-25 Motorola, Inc. Field effect transistor having control and current electrodes positioned at a planar elevated surface
US5158901A (en) * 1991-09-30 1992-10-27 Motorola, Inc. Field effect transistor having control and current electrodes positioned at a planar elevated surface and method of formation
US5286667A (en) * 1992-08-11 1994-02-15 Taiwan Semiconductor Manufacturing Company Modified and robust self-aligning contact process
EP0606758B1 (de) * 1992-12-30 2000-09-06 Samsung Electronics Co., Ltd. Verfahren zur Herstellung einer SOI-Transistor-DRAM
KR0125113B1 (ko) * 1993-02-02 1997-12-11 모리시타 요이찌 불휘발성 반도체 메모리 집적장치 및 그 제조방법
JPH07130871A (ja) * 1993-06-28 1995-05-19 Toshiba Corp 半導体記憶装置
US5529944A (en) * 1995-02-02 1996-06-25 International Business Machines Corporation Method of making cross point four square folded bitline trench DRAM cell
KR0165370B1 (ko) 1995-12-22 1999-02-01 김광호 차아지 업에 의한 반도체장치의 손상을 방지하는 방법
US6114082A (en) * 1996-09-16 2000-09-05 International Business Machines Corporation Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same
US6034389A (en) * 1997-01-22 2000-03-07 International Business Machines Corporation Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array
DE19732871C2 (de) * 1997-07-30 1999-05-27 Siemens Ag Festwert-Speicherzellenanordnung, Ätzmaske für deren Programmierung und Verfahren zu deren Herstellung
US6528837B2 (en) 1997-10-06 2003-03-04 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6066869A (en) * 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
DE19800340A1 (de) * 1998-01-07 1999-07-15 Siemens Ag Halbleiterspeicheranordnung und Verfahren zu deren Herstellung
US6246083B1 (en) 1998-02-24 2001-06-12 Micron Technology, Inc. Vertical gain cell and array for a dynamic random access memory
US6242775B1 (en) 1998-02-24 2001-06-05 Micron Technology, Inc. Circuits and methods using vertical complementary transistors
US6124729A (en) 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
US6137128A (en) * 1998-06-09 2000-10-24 International Business Machines Corporation Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
US6312988B1 (en) * 1999-09-02 2001-11-06 Micron Technology, Inc. Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions
GB0005650D0 (en) * 2000-03-10 2000-05-03 Koninkl Philips Electronics Nv Field-effect semiconductor devices
EP1353385B1 (de) * 2001-01-19 2014-09-24 Mitsubishi Denki Kabushiki Kaisha Halbleiteranordnung
JP3617971B2 (ja) * 2001-12-11 2005-02-09 株式会社東芝 半導体記憶装置
US7473596B2 (en) * 2003-12-19 2009-01-06 Micron Technology, Inc. Methods of forming memory cells
KR20130134813A (ko) * 2012-05-31 2013-12-10 에스케이하이닉스 주식회사 자기정렬된 게이트전극을 구비한 수직채널트랜지스터 및 그 제조 방법
US11037940B2 (en) * 2018-03-22 2021-06-15 Micron Technology, Inc. Integrated circuit constructions comprising memory and methods used in the formation of integrated circuitry comprising memory

Family Cites Families (17)

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US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
JPS6037619B2 (ja) * 1976-11-17 1985-08-27 株式会社東芝 半導体メモリ装置
US4262298A (en) * 1979-09-04 1981-04-14 Burroughs Corporation Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates
US4407058A (en) * 1981-05-22 1983-10-04 International Business Machines Corporation Method of making dense vertical FET's
JPS59117258A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 半導体装置の製造方法
JPS5972161A (ja) * 1983-09-09 1984-04-24 Hitachi Ltd 半導体記憶装置
KR920010461B1 (ko) * 1983-09-28 1992-11-28 가부시끼가이샤 히다찌세이사꾸쇼 반도체 메모리와 그 제조 방법
US4672410A (en) * 1984-07-12 1987-06-09 Nippon Telegraph & Telephone Semiconductor memory device with trench surrounding each memory cell
JPH0793365B2 (ja) * 1984-09-11 1995-10-09 株式会社東芝 半導体記憶装置およびその製造方法
EP0180026B1 (de) * 1984-10-31 1992-01-08 Texas Instruments Incorporated DRAM-Zelle und Verfahren
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
JPH0831933B2 (ja) * 1985-01-31 1996-03-27 キヤノン株式会社 画像送信装置
US4673962A (en) * 1985-03-21 1987-06-16 Texas Instruments Incorporated Vertical DRAM cell and method
US4737829A (en) * 1985-03-28 1988-04-12 Nec Corporation Dynamic random access memory device having a plurality of one-transistor type memory cells
US4679300A (en) * 1985-10-07 1987-07-14 Thomson Components-Mostek Corp. Method of making a trench capacitor and dram memory cell
US4769786A (en) * 1986-07-15 1988-09-06 International Business Machines Corporation Two square memory cells

Also Published As

Publication number Publication date
JPH0682800B2 (ja) 1994-10-19
EP0198590A3 (en) 1987-04-01
EP0198590A2 (de) 1986-10-22
JPS61239658A (ja) 1986-10-24
US5001078A (en) 1991-03-19
KR900001225B1 (ko) 1990-03-05
US5504028A (en) 1996-04-02
KR860008609A (ko) 1986-11-17
EP0198590B1 (de) 1992-05-20
US4990980A (en) 1991-02-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee