DE3685361D1 - Halbleiterspeichervorrichtung. - Google Patents
Halbleiterspeichervorrichtung.Info
- Publication number
- DE3685361D1 DE3685361D1 DE8686301758T DE3685361T DE3685361D1 DE 3685361 D1 DE3685361 D1 DE 3685361D1 DE 8686301758 T DE8686301758 T DE 8686301758T DE 3685361 T DE3685361 T DE 3685361T DE 3685361 D1 DE3685361 D1 DE 3685361D1
- Authority
- DE
- Germany
- Prior art keywords
- storage device
- semiconductor storage
- semiconductor
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60080619A JPH0682800B2 (ja) | 1985-04-16 | 1985-04-16 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3685361D1 true DE3685361D1 (de) | 1992-06-25 |
Family
ID=13723358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686301758T Expired - Lifetime DE3685361D1 (de) | 1985-04-16 | 1986-03-11 | Halbleiterspeichervorrichtung. |
Country Status (5)
Country | Link |
---|---|
US (3) | US5001078A (de) |
EP (1) | EP0198590B1 (de) |
JP (1) | JPH0682800B2 (de) |
KR (1) | KR900001225B1 (de) |
DE (1) | DE3685361D1 (de) |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE33261E (en) * | 1984-07-03 | 1990-07-10 | Texas Instruments, Incorporated | Trench capacitor for high density dynamic RAM |
US5208657A (en) * | 1984-08-31 | 1993-05-04 | Texas Instruments Incorporated | DRAM Cell with trench capacitor and vertical channel in substrate |
US5225697A (en) * | 1984-09-27 | 1993-07-06 | Texas Instruments, Incorporated | dRAM cell and method |
US5102817A (en) * | 1985-03-21 | 1992-04-07 | Texas Instruments Incorporated | Vertical DRAM cell and method |
JPH0680805B2 (ja) * | 1985-05-29 | 1994-10-12 | 日本電気株式会社 | Mis型半導体記憶装置 |
US5164917A (en) * | 1985-06-26 | 1992-11-17 | Texas Instruments Incorporated | Vertical one-transistor DRAM with enhanced capacitance and process for fabricating |
US4769786A (en) * | 1986-07-15 | 1988-09-06 | International Business Machines Corporation | Two square memory cells |
JPS6351667A (ja) * | 1986-08-21 | 1988-03-04 | Matsushita Electronics Corp | 半導体記憶装置 |
US4959698A (en) * | 1986-10-08 | 1990-09-25 | Mitsubishi Denki Kabushiki Kaisha | Memory cell of a semiconductor memory device |
US4785337A (en) * | 1986-10-17 | 1988-11-15 | International Business Machines Corporation | Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes |
JPS63115367A (ja) * | 1986-11-04 | 1988-05-19 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS63211750A (ja) * | 1987-02-27 | 1988-09-02 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4830978A (en) * | 1987-03-16 | 1989-05-16 | Texas Instruments Incorporated | Dram cell and method |
US4916524A (en) * | 1987-03-16 | 1990-04-10 | Texas Instruments Incorporated | Dram cell and method |
JPH0795568B2 (ja) * | 1987-04-27 | 1995-10-11 | 日本電気株式会社 | 半導体記憶装置 |
US5200353A (en) * | 1987-06-29 | 1993-04-06 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having trench capacitor |
US5109259A (en) * | 1987-09-22 | 1992-04-28 | Texas Instruments Incorporated | Multiple DRAM cells in a trench |
JP2506830B2 (ja) * | 1987-10-21 | 1996-06-12 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JPH01125858A (ja) * | 1987-11-10 | 1989-05-18 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US5183774A (en) * | 1987-11-17 | 1993-02-02 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor memory device |
JPH01143254A (ja) * | 1987-11-28 | 1989-06-05 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2606857B2 (ja) * | 1987-12-10 | 1997-05-07 | 株式会社日立製作所 | 半導体記憶装置の製造方法 |
JPH01227468A (ja) * | 1988-03-08 | 1989-09-11 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
DE68926793T2 (de) * | 1988-03-15 | 1997-01-09 | Toshiba Kawasaki Kk | Dynamischer RAM |
JPH07105477B2 (ja) * | 1988-05-28 | 1995-11-13 | 富士通株式会社 | 半導体装置及びその製造方法 |
US5106776A (en) * | 1988-06-01 | 1992-04-21 | Texas Instruments Incorporated | Method of making high performance composed pillar dRAM cell |
US5103276A (en) * | 1988-06-01 | 1992-04-07 | Texas Instruments Incorporated | High performance composed pillar dram cell |
US4926224A (en) * | 1988-06-03 | 1990-05-15 | Texas Instruments Incorporated | Crosspoint dynamic ram cell for folded bitline array |
US5225363A (en) * | 1988-06-28 | 1993-07-06 | Texas Instruments Incorporated | Trench capacitor DRAM cell and method of manufacture |
US5105245A (en) * | 1988-06-28 | 1992-04-14 | Texas Instruments Incorporated | Trench capacitor DRAM cell with diffused bit lines adjacent to a trench |
US4977436A (en) * | 1988-07-25 | 1990-12-11 | Motorola, Inc. | High density DRAM |
US4927779A (en) * | 1988-08-10 | 1990-05-22 | International Business Machines Corporation | Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor |
US4894697A (en) * | 1988-10-31 | 1990-01-16 | International Business Machines Corporation | Ultra dense dram cell and its method of fabrication |
US4920065A (en) * | 1988-10-31 | 1990-04-24 | International Business Machines Corporation | Method of making ultra dense dram cells |
US4945069A (en) * | 1988-12-16 | 1990-07-31 | Texas Instruments, Incorporated | Organic space holder for trench processing |
US5084418A (en) * | 1988-12-27 | 1992-01-28 | Texas Instruments Incorporated | Method of making an array device with buried interconnects |
FR2658952A1 (fr) * | 1990-02-27 | 1991-08-30 | Thomson Csf | Procede de realisation de memoires haute densite. |
JPH03278573A (ja) * | 1990-03-28 | 1991-12-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5034787A (en) * | 1990-06-28 | 1991-07-23 | International Business Machines Corporation | Structure and fabrication method for a double trench memory cell device |
US5156992A (en) * | 1991-06-25 | 1992-10-20 | Texas Instruments Incorporated | Process for forming poly-sheet pillar transistor DRAM cell |
KR940000513B1 (ko) * | 1991-08-21 | 1994-01-21 | 현대전자산업 주식회사 | Dram셀 및 그 제조방법 |
US5158901A (en) * | 1991-09-30 | 1992-10-27 | Motorola, Inc. | Field effect transistor having control and current electrodes positioned at a planar elevated surface and method of formation |
US5214301A (en) * | 1991-09-30 | 1993-05-25 | Motorola, Inc. | Field effect transistor having control and current electrodes positioned at a planar elevated surface |
US5286667A (en) * | 1992-08-11 | 1994-02-15 | Taiwan Semiconductor Manufacturing Company | Modified and robust self-aligning contact process |
DE69329376T2 (de) * | 1992-12-30 | 2001-01-04 | Samsung Electronics Co., Ltd. | Verfahren zur Herstellung einer SOI-Transistor-DRAM |
KR0125113B1 (ko) * | 1993-02-02 | 1997-12-11 | 모리시타 요이찌 | 불휘발성 반도체 메모리 집적장치 및 그 제조방법 |
JPH07130871A (ja) * | 1993-06-28 | 1995-05-19 | Toshiba Corp | 半導体記憶装置 |
US5529944A (en) * | 1995-02-02 | 1996-06-25 | International Business Machines Corporation | Method of making cross point four square folded bitline trench DRAM cell |
KR0165370B1 (ko) | 1995-12-22 | 1999-02-01 | 김광호 | 차아지 업에 의한 반도체장치의 손상을 방지하는 방법 |
US6114082A (en) * | 1996-09-16 | 2000-09-05 | International Business Machines Corporation | Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same |
US6034389A (en) * | 1997-01-22 | 2000-03-07 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array |
DE19732871C2 (de) * | 1997-07-30 | 1999-05-27 | Siemens Ag | Festwert-Speicherzellenanordnung, Ätzmaske für deren Programmierung und Verfahren zu deren Herstellung |
US6528837B2 (en) | 1997-10-06 | 2003-03-04 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
US6066869A (en) * | 1997-10-06 | 2000-05-23 | Micron Technology, Inc. | Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor |
DE19800340A1 (de) * | 1998-01-07 | 1999-07-15 | Siemens Ag | Halbleiterspeicheranordnung und Verfahren zu deren Herstellung |
US6242775B1 (en) | 1998-02-24 | 2001-06-05 | Micron Technology, Inc. | Circuits and methods using vertical complementary transistors |
US6246083B1 (en) | 1998-02-24 | 2001-06-12 | Micron Technology, Inc. | Vertical gain cell and array for a dynamic random access memory |
US6124729A (en) | 1998-02-27 | 2000-09-26 | Micron Technology, Inc. | Field programmable logic arrays with vertical transistors |
US6137128A (en) | 1998-06-09 | 2000-10-24 | International Business Machines Corporation | Self-isolated and self-aligned 4F-square vertical fet-trench dram cells |
US6312988B1 (en) | 1999-09-02 | 2001-11-06 | Micron Technology, Inc. | Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions |
GB0005650D0 (en) * | 2000-03-10 | 2000-05-03 | Koninkl Philips Electronics Nv | Field-effect semiconductor devices |
US6953968B2 (en) * | 2001-01-19 | 2005-10-11 | Mitsubishi Denki Kabushiki Kaisha | High voltage withstanding semiconductor device |
JP3617971B2 (ja) * | 2001-12-11 | 2005-02-09 | 株式会社東芝 | 半導体記憶装置 |
US7473596B2 (en) | 2003-12-19 | 2009-01-06 | Micron Technology, Inc. | Methods of forming memory cells |
KR20130134813A (ko) * | 2012-05-31 | 2013-12-10 | 에스케이하이닉스 주식회사 | 자기정렬된 게이트전극을 구비한 수직채널트랜지스터 및 그 제조 방법 |
US11037940B2 (en) * | 2018-03-22 | 2021-06-15 | Micron Technology, Inc. | Integrated circuit constructions comprising memory and methods used in the formation of integrated circuitry comprising memory |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
DE2619713C2 (de) * | 1976-05-04 | 1984-12-20 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher |
JPS6037619B2 (ja) * | 1976-11-17 | 1985-08-27 | 株式会社東芝 | 半導体メモリ装置 |
US4262298A (en) * | 1979-09-04 | 1981-04-14 | Burroughs Corporation | Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates |
US4407058A (en) * | 1981-05-22 | 1983-10-04 | International Business Machines Corporation | Method of making dense vertical FET's |
JPS59117258A (ja) * | 1982-12-24 | 1984-07-06 | Hitachi Ltd | 半導体装置の製造方法 |
JPS5972161A (ja) * | 1983-09-09 | 1984-04-24 | Hitachi Ltd | 半導体記憶装置 |
KR920010461B1 (ko) * | 1983-09-28 | 1992-11-28 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 메모리와 그 제조 방법 |
US4672410A (en) * | 1984-07-12 | 1987-06-09 | Nippon Telegraph & Telephone | Semiconductor memory device with trench surrounding each memory cell |
JPH0793365B2 (ja) * | 1984-09-11 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
DE3585136D1 (de) * | 1984-10-31 | 1992-02-20 | Texas Instruments Inc | Dram-zelle und verfahren. |
US4713678A (en) * | 1984-12-07 | 1987-12-15 | Texas Instruments Incorporated | dRAM cell and method |
JPH0831933B2 (ja) * | 1985-01-31 | 1996-03-27 | キヤノン株式会社 | 画像送信装置 |
US4673962A (en) * | 1985-03-21 | 1987-06-16 | Texas Instruments Incorporated | Vertical DRAM cell and method |
US4737829A (en) * | 1985-03-28 | 1988-04-12 | Nec Corporation | Dynamic random access memory device having a plurality of one-transistor type memory cells |
US4679300A (en) * | 1985-10-07 | 1987-07-14 | Thomson Components-Mostek Corp. | Method of making a trench capacitor and dram memory cell |
US4769786A (en) * | 1986-07-15 | 1988-09-06 | International Business Machines Corporation | Two square memory cells |
-
1985
- 1985-04-16 JP JP60080619A patent/JPH0682800B2/ja not_active Expired - Lifetime
-
1986
- 1986-03-11 DE DE8686301758T patent/DE3685361D1/de not_active Expired - Lifetime
- 1986-03-11 EP EP86301758A patent/EP0198590B1/de not_active Expired - Lifetime
- 1986-03-14 KR KR1019860001867A patent/KR900001225B1/ko not_active IP Right Cessation
-
1989
- 1989-08-04 US US07/389,417 patent/US5001078A/en not_active Expired - Lifetime
- 1989-08-07 US US07/390,510 patent/US4990980A/en not_active Expired - Lifetime
-
1995
- 1995-06-05 US US08/464,385 patent/US5504028A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0198590B1 (de) | 1992-05-20 |
US4990980A (en) | 1991-02-05 |
JPH0682800B2 (ja) | 1994-10-19 |
KR860008609A (ko) | 1986-11-17 |
KR900001225B1 (ko) | 1990-03-05 |
EP0198590A2 (de) | 1986-10-22 |
EP0198590A3 (en) | 1987-04-01 |
US5504028A (en) | 1996-04-02 |
JPS61239658A (ja) | 1986-10-24 |
US5001078A (en) | 1991-03-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |