DE3767579D1 - Nichtfluechtige halbleiter-speichereinrichtung. - Google Patents

Nichtfluechtige halbleiter-speichereinrichtung.

Info

Publication number
DE3767579D1
DE3767579D1 DE8787301563T DE3767579T DE3767579D1 DE 3767579 D1 DE3767579 D1 DE 3767579D1 DE 8787301563 T DE8787301563 T DE 8787301563T DE 3767579 T DE3767579 T DE 3767579T DE 3767579 D1 DE3767579 D1 DE 3767579D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
volatile semiconductor
volatile
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787301563T
Other languages
English (en)
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3767579D1 publication Critical patent/DE3767579D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
DE8787301563T 1986-02-27 1987-02-24 Nichtfluechtige halbleiter-speichereinrichtung. Expired - Fee Related DE3767579D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61042383A JPS62217493A (ja) 1986-02-27 1986-02-27 半導体不揮発性記憶装置

Publications (1)

Publication Number Publication Date
DE3767579D1 true DE3767579D1 (de) 1991-02-28

Family

ID=12634540

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787301563T Expired - Fee Related DE3767579D1 (de) 1986-02-27 1987-02-24 Nichtfluechtige halbleiter-speichereinrichtung.

Country Status (5)

Country Link
US (1) US4799194A (de)
EP (1) EP0250060B1 (de)
JP (1) JPS62217493A (de)
KR (1) KR900008941B1 (de)
DE (1) DE3767579D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4750155A (en) * 1985-09-19 1988-06-07 Xilinx, Incorporated 5-Transistor memory cell which can be reliably read and written
JPS6414798A (en) * 1987-07-09 1989-01-18 Fujitsu Ltd Non-volatile memory device
US4980859A (en) * 1989-04-07 1990-12-25 Xicor, Inc. NOVRAM cell using two differential decouplable nonvolatile memory elements
US5732015A (en) * 1991-04-23 1998-03-24 Waferscale Integration, Inc. SRAM with a programmable reference voltage
US5602776A (en) * 1994-10-17 1997-02-11 Simtek Corporation Non-Volatile, static random access memory with current limiting
US5998263A (en) * 1996-05-16 1999-12-07 Altera Corporation High-density nonvolatile memory cell
US5901079A (en) * 1997-01-13 1999-05-04 International Business Machines Corporation Skewed memory cell apparatus and method
US6424011B1 (en) 1997-04-14 2002-07-23 International Business Machines Corporation Mixed memory integration with NVRAM, dram and sram cell structures on same substrate
US5880991A (en) * 1997-04-14 1999-03-09 International Business Machines Corporation Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure
US6075737A (en) 1998-12-02 2000-06-13 Micron Technology, Inc. Row decoded biasing of sense amplifier for improved one's margin
US6452856B1 (en) * 1999-02-26 2002-09-17 Micron Technology, Inc. DRAM technology compatible processor/memory chips
US6259126B1 (en) 1999-11-23 2001-07-10 International Business Machines Corporation Low cost mixed memory integration with FERAM
US6240009B1 (en) * 2000-02-02 2001-05-29 Hewlett-Packard Company Asymmetric ram cell
US6556487B1 (en) * 2000-09-20 2003-04-29 Cypress Semiconductor Corp. Non-volatile static memory cell
US6532169B1 (en) * 2001-06-26 2003-03-11 Cypress Semiconductor Corp. SONOS latch and application
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
GB2437989B (en) 2006-05-09 2009-09-09 Micron Technology Inc Method, apparatus, and system for providing initial state random access memory
US20080151654A1 (en) 2006-12-22 2008-06-26 Allan James D Method and apparatus to implement a reset function in a non-volatile static random access memory
US7881118B2 (en) * 2007-05-25 2011-02-01 Cypress Semiconductor Corporation Sense transistor protection for memory programming
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8036032B2 (en) * 2007-12-31 2011-10-11 Cypress Semiconductor Corporation 5T high density NVDRAM cell
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US9779814B2 (en) * 2011-08-09 2017-10-03 Flashsilicon Incorporation Non-volatile static random access memory devices and methods of operations
FR3007186B1 (fr) * 2013-06-12 2016-09-09 Stmicroelectronics Rousset Dispositif de memoire compact associant un plan memoire du type sram et un plan memoire du type non volatil, et procedes de fonctionnement
FR3018944A1 (fr) 2014-03-21 2015-09-25 St Microelectronics Rousset Dispositif de memoire associant un plan memoire du type sram et un plan-memoire du type non volatil, durci contre des basculements accidentels

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949385A (en) * 1974-12-23 1976-04-06 Ibm Corporation D.C. Stable semiconductor memory cell
JPS5953637B2 (ja) * 1978-09-20 1984-12-26 株式会社東芝 記憶回路
US4300212A (en) * 1979-01-24 1981-11-10 Xicor, Inc. Nonvolatile static random access memory devices
JPS5856198B2 (ja) * 1980-09-25 1983-12-13 株式会社東芝 半導体記憶装置
US4400799A (en) * 1981-09-08 1983-08-23 Intel Corporation Non-volatile memory cell
US4434478A (en) * 1981-11-27 1984-02-28 International Business Machines Corporation Programming floating gate devices
US4420821A (en) * 1982-02-19 1983-12-13 International Business Machines Corporation Static RAM with non-volatile back-up storage and method of operation thereof
US4510584A (en) * 1982-12-29 1985-04-09 Mostek Corporation MOS Random access memory cell with nonvolatile storage
FR2543726B1 (fr) * 1983-03-31 1985-06-14 Efcis Cellule de memoire ram non volatile a transistors cmos a grille flottante commune
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device
JPS6083374A (ja) * 1983-10-14 1985-05-11 Fujitsu Ltd 半導体記憶装置
JPS60136995A (ja) * 1983-12-26 1985-07-20 Seiko Instr & Electronics Ltd 不揮発性ｒａｍ
US4618943A (en) * 1984-01-09 1986-10-21 International Business Machines Corporation Semiconductor static read/write memory having an additional read-only capability
JPS61246995A (ja) * 1985-04-24 1986-11-04 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
US4686652A (en) * 1985-11-25 1987-08-11 Rockwell International Corporation Non-volatile RAM cell with single high voltage precharge
US4706220A (en) * 1986-02-14 1987-11-10 Rockwell International Corporation Non-volatile RAM cell with dual high voltage precharge
US5839614A (en) * 1991-12-06 1998-11-24 Aptar Group, Inc. Dispensing package
CN1206584C (zh) * 1999-08-30 2005-06-15 阿诺托知识产权许可贸易公司 记事本
GB0202233D0 (en) * 2002-01-31 2002-03-20 Smith & Nephew Bioresorbable polymers
US7364539B2 (en) * 2003-10-21 2008-04-29 General Electric Company Telemetry sensing system for infant care apparatus

Also Published As

Publication number Publication date
EP0250060A1 (de) 1987-12-23
EP0250060B1 (de) 1991-01-23
JPS62217493A (ja) 1987-09-24
US4799194A (en) 1989-01-17
KR900008941B1 (en) 1990-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee