DE3853038D1 - Nichtflüchtige Halbleiterspeicheranordnung. - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung.

Info

Publication number
DE3853038D1
DE3853038D1 DE3853038T DE3853038T DE3853038D1 DE 3853038 D1 DE3853038 D1 DE 3853038D1 DE 3853038 T DE3853038 T DE 3853038T DE 3853038 T DE3853038 T DE 3853038T DE 3853038 D1 DE3853038 D1 DE 3853038D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3853038T
Other languages
English (en)
Other versions
DE3853038T2 (de
Inventor
Kiyokazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3853038D1 publication Critical patent/DE3853038D1/de
Publication of DE3853038T2 publication Critical patent/DE3853038T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
DE3853038T 1987-10-09 1988-10-10 Nichtflüchtige Halbleiterspeicheranordnung. Expired - Fee Related DE3853038T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25582887A JP2534733B2 (ja) 1987-10-09 1987-10-09 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3853038D1 true DE3853038D1 (de) 1995-03-23
DE3853038T2 DE3853038T2 (de) 1995-10-12

Family

ID=17284173

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853038T Expired - Fee Related DE3853038T2 (de) 1987-10-09 1988-10-10 Nichtflüchtige Halbleiterspeicheranordnung.

Country Status (4)

Country Link
US (1) US4887242A (de)
EP (1) EP0311137B1 (de)
JP (1) JP2534733B2 (de)
DE (1) DE3853038T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3874455T2 (de) * 1987-07-29 1993-04-08 Toshiba Kawasaki Kk Nichtfluechtiger halbleiterspeicher.
JPH01192090A (ja) * 1988-01-27 1989-08-02 Mitsubishi Electric Corp 不揮発性半導体記憶装置
EP0537144B1 (de) * 1989-07-13 1995-06-21 Curtis Instruments, Inc. Methode und Vorrichtung zum Kodieren und Lesen von Daten
JPH03241598A (ja) * 1990-02-19 1991-10-28 Fujitsu Ltd シグネチャー回路
EP0509184A1 (de) * 1991-04-18 1992-10-21 STMicroelectronics S.r.l. Sektorenlösbarer Flash-EPROM-Speicher und zugeordnetes Schreibverfahren
JPH05101201A (ja) * 1991-10-09 1993-04-23 Rohm Co Ltd オプシヨン設定回路
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
US5369609A (en) * 1992-03-13 1994-11-29 Silicon Storage Technology, Inc. Floating gate memory array with latches having improved immunity to write disturbance, and with storage latches
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3219236B2 (ja) * 1996-02-22 2001-10-15 シャープ株式会社 半導体記憶装置
US5959891A (en) * 1996-08-16 1999-09-28 Altera Corporation Evaluation of memory cell characteristics
FR2770326B1 (fr) * 1997-10-28 2001-12-28 Sgs Thomson Microelectronics Procede d'ecriture dans une memoire non volatile modifiable electriquement
JP3999900B2 (ja) 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
FR2799043B1 (fr) * 1999-09-29 2001-12-14 St Microelectronics Sa Registre de colonnes, memoire l'incorporant, et procede d'ecriture dans une telle memoire
US6618289B2 (en) 2001-10-29 2003-09-09 Atmel Corporation High voltage bit/column latch for Vcc operation
JP5095741B2 (ja) * 2006-09-28 2012-12-12 インテル コーポレイション Ｎａｎｄゲートを備えたｎｂｔｉ耐性を有するメモリセル
US7518933B2 (en) * 2007-02-07 2009-04-14 Freescale Semiconductor, Inc. Circuit for use in a multiple block memory

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253059A (en) * 1979-05-14 1981-02-24 Fairchild Camera & Instrument Corp. EPROM Reliability test circuit
US4412309A (en) * 1981-09-28 1983-10-25 Motorola, Inc. EEPROM With bulk zero program capability
US4771404A (en) * 1984-09-05 1988-09-13 Nippon Telegraph And Telephone Corporation Memory device employing multilevel storage circuits
EP0211069A4 (de) * 1985-02-11 1990-06-27 Advanced Micro Devices Inc Effiziente seitenmodusschreibschaltung für eeproms.
US4701884A (en) * 1985-08-16 1987-10-20 Hitachi, Ltd. Semiconductor memory for serial data access
JP2515703B2 (ja) * 1985-10-25 1996-07-10 株式会社日立製作所 Ｅｅｐｒｏｍ装置

Also Published As

Publication number Publication date
EP0311137A2 (de) 1989-04-12
EP0311137B1 (de) 1995-02-15
JPH0198194A (ja) 1989-04-17
EP0311137A3 (de) 1991-08-21
JP2534733B2 (ja) 1996-09-18
DE3853038T2 (de) 1995-10-12
US4887242A (en) 1989-12-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee