DE3887823D1 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number
DE3887823D1
DE3887823D1 DE88310421T DE3887823T DE3887823D1 DE 3887823 D1 DE3887823 D1 DE 3887823D1 DE 88310421 T DE88310421 T DE 88310421T DE 3887823 T DE3887823 T DE 3887823T DE 3887823 D1 DE3887823 D1 DE 3887823D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88310421T
Other languages
English (en)
Other versions
DE3887823T2 (de
Inventor
Katsuji Iguchi
Masahiko Urai
Chiyako Masuichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3887823D1 publication Critical patent/DE3887823D1/de
Application granted granted Critical
Publication of DE3887823T2 publication Critical patent/DE3887823T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE3887823T 1987-11-06 1988-11-04 Halbleiterspeicher. Expired - Fee Related DE3887823T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62281382A JP2517015B2 (ja) 1987-11-06 1987-11-06 半導体メモリの製造方法

Publications (2)

Publication Number Publication Date
DE3887823D1 true DE3887823D1 (de) 1994-03-24
DE3887823T2 DE3887823T2 (de) 1994-08-11

Family

ID=17638360

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3887823T Expired - Fee Related DE3887823T2 (de) 1987-11-06 1988-11-04 Halbleiterspeicher.

Country Status (4)

Country Link
US (1) US4999689A (de)
EP (1) EP0315483B1 (de)
JP (1) JP2517015B2 (de)
DE (1) DE3887823T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910000246B1 (ko) * 1988-02-15 1991-01-23 삼성전자 주식회사 반도체 메모리장치
JPH04328861A (ja) * 1991-04-26 1992-11-17 Texas Instr Japan Ltd 半導体集積回路装置及びその製造方法
JP3146316B2 (ja) * 1991-05-17 2001-03-12 日本テキサス・インスツルメンツ株式会社 半導体装置及びその製造方法
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US6395613B1 (en) 2000-08-30 2002-05-28 Micron Technology, Inc. Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts
JPH1167626A (ja) * 1997-08-12 1999-03-09 Hitachi Ltd レジスト除去方法および装置
US6476435B1 (en) 1997-09-30 2002-11-05 Micron Technology, Inc. Self-aligned recessed container cell capacitor
US6090661A (en) * 1998-03-19 2000-07-18 Lsi Logic Corporation Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls
US6369418B1 (en) 1998-03-19 2002-04-09 Lsi Logic Corporation Formation of a novel DRAM cell
US6177699B1 (en) 1998-03-19 2001-01-23 Lsi Logic Corporation DRAM cell having a verticle transistor and a capacitor formed on the sidewalls of a trench isolation
JP3655113B2 (ja) * 1998-12-28 2005-06-02 シャープ株式会社 半導体記憶装置の製造方法
KR20010017088A (ko) * 1999-08-07 2001-03-05 박종섭 아날로그 커패시터의 콘택홀 형성방법
US7208789B2 (en) * 2002-08-02 2007-04-24 Promos Technologies, Inc. DRAM cell structure with buried surrounding capacitor and process for manufacturing the same
US6875653B2 (en) * 2002-08-02 2005-04-05 Promos Technologies Inc. DRAM cell structure with buried surrounding capacitor and process for manufacturing the same
JP2007306680A (ja) * 2006-05-10 2007-11-22 Kokusan Denki Co Ltd 内燃機関用フライホイール磁石回転子
CN105226046A (zh) * 2015-10-13 2016-01-06 格科微电子（上海）有限公司 金属层-绝缘层-金属层电容器及其制作方法
CN106469716B (zh) * 2016-11-25 2019-02-05 南通壹选工业设计有限公司 一种垂直型电容器结构
CN106952895B (zh) * 2017-02-22 2019-05-10 新昌县诺趣智能科技有限公司 一种mim电容器结构的制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583260A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタ
JPH0793366B2 (ja) * 1984-10-08 1995-10-09 日本電信電話株式会社 半導体メモリおよびその製造方法
EP0164829B1 (de) * 1984-04-19 1988-09-28 Nippon Telegraph And Telephone Corporation Halbleiterspeicherbauelement und Verfahren zur Herstellung
JPS60239053A (ja) * 1984-05-14 1985-11-27 Oki Electric Ind Co Ltd 半導体ｒａｍ装置
JPS6156445A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 半導体装置
JPS6157194A (ja) * 1984-08-28 1986-03-24 Mitsubishi Electric Corp Ｐａｌ／ｓｅｃａｍ信号間欠磁気記録方法
JPH0750745B2 (ja) * 1985-10-03 1995-05-31 株式会社日立製作所 半導体装置
US4704368A (en) * 1985-10-30 1987-11-03 International Business Machines Corporation Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor
JPH0682804B2 (ja) * 1985-12-24 1994-10-19 三菱電機株式会社 半導体記憶装置
JPS62179659A (ja) * 1986-02-01 1987-08-06 Canon Inc 超音波探触子
US4801989A (en) * 1986-02-20 1989-01-31 Fujitsu Limited Dynamic random access memory having trench capacitor with polysilicon lined lower electrode
DE3780840T2 (de) * 1986-03-03 1993-03-25 Fujitsu Ltd Einen rillenkondensator enthaltender dynamischer speicher mit wahlfreiem zugriff.
JPH0797622B2 (ja) * 1986-03-03 1995-10-18 富士通株式会社 半導体メモリ
JPH0685427B2 (ja) * 1986-03-13 1994-10-26 三菱電機株式会社 半導体記憶装置
JPS63229745A (ja) * 1987-03-19 1988-09-26 Fujitsu Ltd ダイナミツクランダムアクセスメモリ装置
JP2645008B2 (ja) * 1987-03-30 1997-08-25 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
JPH01123462A (ja) 1989-05-16
DE3887823T2 (de) 1994-08-11
US4999689A (en) 1991-03-12
EP0315483A3 (en) 1990-10-10
JP2517015B2 (ja) 1996-07-24
EP0315483B1 (de) 1994-02-16
EP0315483A2 (de) 1989-05-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee