DE3887224D1 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number
DE3887224D1
DE3887224D1 DE88112373T DE3887224T DE3887224D1 DE 3887224 D1 DE3887224 D1 DE 3887224D1 DE 88112373 T DE88112373 T DE 88112373T DE 3887224 T DE3887224 T DE 3887224T DE 3887224 D1 DE3887224 D1 DE 3887224D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88112373T
Other languages
English (en)
Other versions
DE3887224T2 (de
Inventor
Yuuichi Tatsumi
Hidenobu Minagawa
Hiroshi C O Patent Di Iwahashi
Masamichi C O Patent Div Asano
Mizuho Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3887224D1 publication Critical patent/DE3887224D1/de
Publication of DE3887224T2 publication Critical patent/DE3887224T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
DE88112373T 1987-07-31 1988-07-29 Halbleiterspeicheranordnung. Expired - Lifetime DE3887224T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19160387A JPH0682520B2 (ja) 1987-07-31 1987-07-31 半導体メモリ

Publications (2)

Publication Number Publication Date
DE3887224D1 true DE3887224D1 (de) 1994-03-03
DE3887224T2 DE3887224T2 (de) 1994-05-05

Family

ID=16277384

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88112373T Expired - Lifetime DE3887224T2 (de) 1987-07-31 1988-07-29 Halbleiterspeicheranordnung.

Country Status (5)

Country Link
US (1) US5138579A (de)
EP (1) EP0301588B1 (de)
JP (1) JPH0682520B2 (de)
KR (1) KR950014093B1 (de)
DE (1) DE3887224T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229963A (en) * 1988-09-21 1993-07-20 Kabushiki Kaisha Toshiba Semiconductor nonvolatile memory device for controlling the potentials on bit lines
JP2601903B2 (ja) * 1989-04-25 1997-04-23 株式会社東芝 半導体記憶装置
JPH03230395A (ja) * 1990-02-02 1991-10-14 Hitachi Ltd スタティック型ｒａｍ
US5307356A (en) * 1990-04-16 1994-04-26 International Business Machines Corporation Interlocked on-chip ECC system
US5467300A (en) * 1990-06-14 1995-11-14 Creative Integrated Systems, Inc. Grounded memory core for Roms, Eproms, and EEpproms having an address decoder, and sense amplifier
JPH04121893A (ja) * 1990-09-12 1992-04-22 Mitsubishi Electric Corp 半導体記憶装置
US5461713A (en) * 1991-05-10 1995-10-24 Sgs-Thomson Microelectronics S.R.L. Current offset sense amplifier of a modulated current or current unbalance type for programmable memories
IT1249809B (it) * 1991-05-10 1995-03-28 St Microelectronics Srl Circuito di lettura a offset di corrente modulata o a sbilanciamento di corrente per celle di memorie programmabili
JP2723695B2 (ja) * 1991-07-02 1998-03-09 シャープ株式会社 半導体記憶装置
JP3160316B2 (ja) * 1991-07-25 2001-04-25 株式会社東芝 不揮発性半導体記憶装置
JP2637314B2 (ja) * 1991-08-30 1997-08-06 株式会社東芝 不揮発性メモリ回路
JP2564067B2 (ja) * 1992-01-09 1996-12-18 株式会社東芝 センス回路を有する読み出し出力回路
US5483494A (en) * 1993-04-07 1996-01-09 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having a reduced delay in reading data after changing from standby to an operation mode
JP3397427B2 (ja) * 1994-02-02 2003-04-14 株式会社東芝 半導体記憶装置
DE69425367T2 (de) * 1994-04-19 2001-02-15 Stmicroelectronics S.R.L., Agrate Brianza Leseschaltkreis für Speichermatrixzelle
US5570317A (en) * 1994-07-19 1996-10-29 Intel Corporation Memory circuit with stress circuitry for detecting defects
DE69533567T2 (de) * 1994-08-09 2005-11-24 Sun Microsystems, Inc., Mountain View Vorrichtung und Verfahren zum Auffinden von False-Timing-Paths in digitalen Schaltkreisen
JPH1027490A (ja) * 1996-07-10 1998-01-27 Toshiba Corp 不揮発性半導体記憶装置
US5729493A (en) * 1996-08-23 1998-03-17 Motorola Inc. Memory suitable for operation at low power supply voltages and sense amplifier therefor
TW367503B (en) * 1996-11-29 1999-08-21 Sanyo Electric Co Non-volatile semiconductor device
US5798967A (en) * 1997-02-22 1998-08-25 Programmable Microelectronics Corporation Sensing scheme for non-volatile memories
US5880988A (en) * 1997-07-11 1999-03-09 International Business Machines Corporation Reference potential for sensing data in electronic storage element
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
KR100554829B1 (ko) * 2002-07-08 2006-02-22 주식회사 하이닉스반도체 센스증폭기
US7212458B1 (en) * 2005-10-25 2007-05-01 Sigmatel, Inc. Memory, processing system and methods for use therewith
JP2007164922A (ja) * 2005-12-15 2007-06-28 Matsushita Electric Ind Co Ltd デコーダ回路
US7352640B2 (en) * 2006-08-09 2008-04-01 Atmel Corporation High-speed, self-synchronized current sense amplifier
US8537606B2 (en) 2011-01-21 2013-09-17 Qualcomm Incorporated Read sensing circuit and method with equalization timing
US9711207B2 (en) * 2014-06-05 2017-07-18 Micron Technology, Inc. Performing logical operations using sensing circuitry

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices
JPS601712B2 (ja) * 1980-12-04 1985-01-17 株式会社東芝 半導体記憶装置
JPS6177199A (ja) * 1984-09-21 1986-04-19 Toshiba Corp 半導体記憶装置
US4730279A (en) * 1985-03-30 1988-03-08 Kabushiki Kaisha Toshiba Static semiconductor memory device
JPS62197990A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp 半導体記憶回路
JP2507529B2 (ja) * 1988-03-31 1996-06-12 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
KR950014093B1 (ko) 1995-11-21
EP0301588A3 (de) 1991-01-23
DE3887224T2 (de) 1994-05-05
EP0301588B1 (de) 1994-01-19
EP0301588A2 (de) 1989-02-01
US5138579A (en) 1992-08-11
KR890002893A (ko) 1989-04-11
JPH0682520B2 (ja) 1994-10-19
JPS6435793A (en) 1989-02-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition