DE3771238D1 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number
DE3771238D1
DE3771238D1 DE8787301766T DE3771238T DE3771238D1 DE 3771238 D1 DE3771238 D1 DE 3771238D1 DE 8787301766 T DE8787301766 T DE 8787301766T DE 3771238 T DE3771238 T DE 3771238T DE 3771238 D1 DE3771238 D1 DE 3771238D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787301766T
Other languages
English (en)
Inventor
Hiroshi Miyamoto
Michihiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=13188992&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3771238(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3771238D1 publication Critical patent/DE3771238D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE8787301766T 1986-03-18 1987-02-27 Halbleiterspeicher. Expired - Fee Related DE3771238D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61062052A JPH07111823B2 (ja) 1986-03-18 1986-03-18 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3771238D1 true DE3771238D1 (de) 1991-08-14

Family

ID=13188992

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787301766T Expired - Fee Related DE3771238D1 (de) 1986-03-18 1987-02-27 Halbleiterspeicher.

Country Status (4)

Country Link
US (1) US4803663A (de)
EP (1) EP0238228B1 (de)
JP (1) JPH07111823B2 (de)
DE (1) DE3771238D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214601A (en) * 1986-12-11 1993-05-25 Mitsubishi Denki Kabushiki Kaisha Bit line structure for semiconductor memory device including cross-points and multiple interconnect layers
US4954992A (en) * 1987-12-24 1990-09-04 Mitsubishi Denki Kabushiki Kaisha Random access memory having separate read out and write in bus lines for reduced access time and operating method therefor
JPH01199393A (ja) * 1988-02-03 1989-08-10 Mitsubishi Electric Corp 半導体記憶装置
JPH01171195A (ja) * 1987-12-25 1989-07-06 Sony Corp メモリ装置
US5148399A (en) * 1988-06-28 1992-09-15 Oki Electric Industry Co., Ltd. Sense amplifier circuitry selectively separable from bit lines for dynamic random access memory
US4991142A (en) * 1989-07-20 1991-02-05 Samsung Semiconductor Inc. Dynamic random access memory with improved sensing and refreshing
JP3006014B2 (ja) * 1990-02-13 2000-02-07 日本電気株式会社 半導体メモリ
US5142494A (en) * 1990-02-26 1992-08-25 Eastman Kodak Company Memory based line-delay architecture
US5058065A (en) * 1990-02-26 1991-10-15 Eastman Kodak Company Memory based line-delay architecture
GB9007789D0 (en) 1990-04-06 1990-06-06 Foss Richard C Method for dram sensing current control
USRE40552E1 (en) 1990-04-06 2008-10-28 Mosaid Technologies, Inc. Dynamic random access memory using imperfect isolating transistors
US5245584A (en) * 1990-12-20 1993-09-14 Vlsi Technology, Inc. Method and apparatus for compensating for bit line delays in semiconductor memories
JPH04315888A (ja) * 1991-04-15 1992-11-06 Nec Corp 半導体記憶装置
KR940007639B1 (ko) * 1991-07-23 1994-08-22 삼성전자 주식회사 분할된 입출력 라인을 갖는 데이타 전송회로
JPH0612877A (ja) * 1992-06-18 1994-01-21 Toshiba Corp 半導体集積回路
JPH0757464A (ja) * 1993-08-10 1995-03-03 Oki Electric Ind Co Ltd 半導体記憶回路
KR0121777B1 (ko) * 1994-05-23 1997-12-05 김영환 고속 동작용 감지 증폭기
US5956286A (en) * 1997-10-28 1999-09-21 International Business Machines Corporation Data processing system and method for implementing a multi-port memory cell
US5870349A (en) * 1997-10-28 1999-02-09 International Business Machines Corporation Data processing system and method for generating memory control signals with clock skew tolerance
US5877976A (en) * 1997-10-28 1999-03-02 International Business Machines Corporation Memory system having a vertical bitline topology and method therefor
US5907508A (en) * 1997-10-28 1999-05-25 International Business Machines Corporation Method and apparatus for single clocked, non-overlapping access in a multi-port memory cell
US6738300B2 (en) 2002-08-26 2004-05-18 International Business Machines Corporation Direct read of DRAM cell using high transfer ratio

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2647394C2 (de) * 1976-10-20 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen MOS-Halbleiterspeicherbaustein
JPS5472641A (en) * 1977-11-21 1979-06-11 Toshiba Corp Voltage detection circuit
JPS57159A (en) * 1980-06-02 1982-01-05 Mitsubishi Chem Ind Ltd Polyester composition
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
JPS58102390A (ja) * 1981-12-12 1983-06-17 Nippon Telegr & Teleph Corp <Ntt> センス回路
JPS58125293A (ja) * 1982-01-22 1983-07-26 Hitachi Ltd 半導体記憶装置
JPS592365A (ja) * 1982-06-28 1984-01-07 Fujitsu Ltd ダイナミツク型半導体記憶装置
JPH0670878B2 (ja) * 1982-11-30 1994-09-07 富士通株式会社 半導体記憶装置
JPS59207485A (ja) * 1983-05-11 1984-11-24 Nec Ic Microcomput Syst Ltd 増幅回路
US4551641A (en) * 1983-11-23 1985-11-05 Motorola, Inc. Sense amplifier
JPS60234295A (ja) * 1984-05-04 1985-11-20 Fujitsu Ltd 半導体記憶装置
JPH101093A (ja) * 1996-06-13 1998-01-06 Shikoku Dock Kk 船舶等海洋構造物の進水装置

Also Published As

Publication number Publication date
EP0238228A3 (en) 1989-07-05
JPS62217490A (ja) 1987-09-24
US4803663A (en) 1989-02-07
JPH07111823B2 (ja) 1995-11-29
EP0238228A2 (de) 1987-09-23
EP0238228B1 (de) 1991-07-10

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee