DE3884022D1 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number
DE3884022D1
DE3884022D1 DE88104276T DE3884022T DE3884022D1 DE 3884022 D1 DE3884022 D1 DE 3884022D1 DE 88104276 T DE88104276 T DE 88104276T DE 3884022 T DE3884022 T DE 3884022T DE 3884022 D1 DE3884022 D1 DE 3884022D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88104276T
Other languages
English (en)
Other versions
DE3884022T2 (de
Inventor
Kazuo Watanabe
Akira Yumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE3884022D1 publication Critical patent/DE3884022D1/de
Publication of DE3884022T2 publication Critical patent/DE3884022T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
DE88104276T 1987-03-17 1988-03-17 Halbleiterspeicheranordnung. Expired - Fee Related DE3884022T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62063340A JP2569538B2 (ja) 1987-03-17 1987-03-17 メモリ装置

Publications (2)

Publication Number Publication Date
DE3884022D1 true DE3884022D1 (de) 1993-10-21
DE3884022T2 DE3884022T2 (de) 1994-02-03

Family

ID=13226409

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88104276T Expired - Fee Related DE3884022T2 (de) 1987-03-17 1988-03-17 Halbleiterspeicheranordnung.

Country Status (5)

Country Link
US (1) US4881203A (de)
EP (1) EP0283019B1 (de)
JP (1) JP2569538B2 (de)
KR (1) KR960001107B1 (de)
DE (1) DE3884022T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69019551T2 (de) * 1989-02-18 1995-09-21 Sony Corp Speicheranordnungen.
US5237534A (en) * 1989-04-27 1993-08-17 Kabushiki Kaisha Toshiba Data sense circuit for a semiconductor nonvolatile memory device
US5146427A (en) * 1989-08-30 1992-09-08 Hitachi Ltd. High speed semiconductor memory having a direct-bypass signal path
US5043945A (en) * 1989-09-05 1991-08-27 Motorola, Inc. Memory with improved bit line and write data line equalization
JPH0778994B2 (ja) * 1989-10-11 1995-08-23 三菱電機株式会社 半導体記憶装置
JP2534782B2 (ja) * 1989-11-10 1996-09-18 株式会社東芝 半導体装置
JP2722853B2 (ja) * 1990-05-18 1998-03-09 日本電気株式会社 半導体メモリ装置
JPH0438793A (ja) * 1990-06-04 1992-02-07 Toshiba Corp データ転送制御回路およびこれを用いたダイナミック型半導体記憶装置
US5222039A (en) * 1990-11-28 1993-06-22 Thunderbird Technologies, Inc. Static random access memory (SRAM) including Fermi-threshold field effect transistors
US5454115A (en) * 1991-12-25 1995-09-26 Sharp Kabushiki Kaisha Data driven type processor having data flow program divided into plurality of simultaneously executable program groups for an N:1 read-out to memory-access ratio
US5243572A (en) * 1992-01-15 1993-09-07 Motorola, Inc. Deselect circuit
FR2694121B1 (fr) * 1992-07-24 1995-09-22 Sgs Thomson Microelectronics Memoire en circuit integre avec prechaarge prealable en sortie.
JP3533227B2 (ja) * 1992-09-10 2004-05-31 株式会社日立製作所 半導体記憶装置
JP2667941B2 (ja) * 1992-09-17 1997-10-27 三菱電機株式会社 メモリセル回路
US5394121A (en) * 1993-10-15 1995-02-28 International Business Machines Corporation Wiring topology for transfer of electrical signals
KR100261962B1 (ko) * 1993-12-31 2000-07-15 김영환 데이타 출력버퍼
US5528541A (en) * 1994-11-09 1996-06-18 Sony Corporation Of Japan Charge shared precharge scheme to reduce compare output delays
KR0167235B1 (ko) * 1995-03-28 1999-02-01 문정환 메모리의 데이타 전송장치
KR0167687B1 (ko) * 1995-09-11 1999-02-01 김광호 고속액세스를 위한 데이타 출력패스를 구비하는 반도체 메모리장치
DE19632780A1 (de) * 1996-08-15 1998-02-19 Ibm Verbesserter Restore für Speicherzellen mittels negativer Bitline-Selektion
US6098145A (en) * 1998-02-18 2000-08-01 Winbond Electronics Corporation Pulsed Y-decoders for improving bitline precharging in memories
KR100287190B1 (ko) * 1999-04-07 2001-04-16 윤종용 선택되는 메모리 모듈만을 데이터 라인에 연결하는 메모리 모듈 시스템 및 이를 이용한 데이터 입출력 방법
FR2823362B1 (fr) * 2001-04-06 2005-03-11 St Microelectronics Sa Dispositif de lecture de cellules memoire
JP4088954B2 (ja) * 2002-03-04 2008-05-21 日本電気株式会社 半導体記憶装置の読み出し回路
US7218554B2 (en) * 2005-06-08 2007-05-15 Macronix International Co., Ltd. Method of refreshing charge-trapping non-volatile memory using band-to-band tunneling hot hole (BTBTHH) injection

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5668990A (en) * 1979-11-08 1981-06-09 Nec Corp Memory circuit
DE3071976D1 (en) * 1979-11-28 1987-07-02 Fujitsu Ltd Semiconductor memory circuit device
JPS59104791A (ja) * 1982-12-04 1984-06-16 Fujitsu Ltd 半導体記憶装置
US4791613A (en) * 1983-09-21 1988-12-13 Inmos Corporation Bit line and column circuitry used in a semiconductor memory
JPS60124093A (ja) * 1983-12-06 1985-07-02 Nec Corp メモリ回路
US4618943A (en) * 1984-01-09 1986-10-21 International Business Machines Corporation Semiconductor static read/write memory having an additional read-only capability
EP0166642A3 (de) * 1984-05-30 1989-02-22 Fujitsu Limited Blockunterteiltes Halbleiterspeichergerät mit unterteilten Bitzeilen
JPS6196588A (ja) * 1984-10-16 1986-05-15 Mitsubishi Electric Corp 半導体記憶装置
JPS61110394A (ja) * 1984-10-31 1986-05-28 Mitsubishi Electric Corp 半導体記憶装置
NL8500434A (nl) * 1985-02-15 1986-09-01 Philips Nv Geintegreerde geheugenschakeling met blokselektie.
JPS61199297A (ja) * 1985-02-28 1986-09-03 Toshiba Corp 半導体記憶装置
JPS6220195A (ja) * 1985-07-19 1987-01-28 Fujitsu Ltd メモリ回路
US4754433A (en) * 1986-09-16 1988-06-28 Ibm Corporation Dynamic ram having multiplexed twin I/O line pairs

Also Published As

Publication number Publication date
KR880011803A (ko) 1988-10-31
JP2569538B2 (ja) 1997-01-08
JPS63228489A (ja) 1988-09-22
KR960001107B1 (ko) 1996-01-18
DE3884022T2 (de) 1994-02-03
EP0283019A2 (de) 1988-09-21
EP0283019B1 (de) 1993-09-15
US4881203A (en) 1989-11-14
EP0283019A3 (en) 1990-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee