FR2823362B1 - Dispositif de lecture de cellules memoire - Google Patents

Dispositif de lecture de cellules memoire

Info

Publication number
FR2823362B1
FR2823362B1 FR0104750A FR0104750A FR2823362B1 FR 2823362 B1 FR2823362 B1 FR 2823362B1 FR 0104750 A FR0104750 A FR 0104750A FR 0104750 A FR0104750 A FR 0104750A FR 2823362 B1 FR2823362 B1 FR 2823362B1
Authority
FR
France
Prior art keywords
memory cells
reading memory
reading
cells
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0104750A
Other languages
English (en)
Other versions
FR2823362A1 (fr
Inventor
Leila Aitouarab
Sigrid Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0104750A priority Critical patent/FR2823362B1/fr
Priority to US10/117,448 priority patent/US6665215B2/en
Publication of FR2823362A1 publication Critical patent/FR2823362A1/fr
Application granted granted Critical
Publication of FR2823362B1 publication Critical patent/FR2823362B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
FR0104750A 2001-04-06 2001-04-06 Dispositif de lecture de cellules memoire Expired - Fee Related FR2823362B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0104750A FR2823362B1 (fr) 2001-04-06 2001-04-06 Dispositif de lecture de cellules memoire
US10/117,448 US6665215B2 (en) 2001-04-06 2002-04-05 Memory cell read device with a precharge amplifier and associated methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0104750A FR2823362B1 (fr) 2001-04-06 2001-04-06 Dispositif de lecture de cellules memoire

Publications (2)

Publication Number Publication Date
FR2823362A1 FR2823362A1 (fr) 2002-10-11
FR2823362B1 true FR2823362B1 (fr) 2005-03-11

Family

ID=8862065

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0104750A Expired - Fee Related FR2823362B1 (fr) 2001-04-06 2001-04-06 Dispositif de lecture de cellules memoire

Country Status (2)

Country Link
US (1) US6665215B2 (fr)
FR (1) FR2823362B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7352626B1 (en) * 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US7295475B2 (en) * 2005-09-20 2007-11-13 Spansion Llc Flash memory programming using an indication bit to interpret state
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
TWI295806B (en) * 2005-11-24 2008-04-11 Via Tech Inc Output circuit of sram
US7369450B2 (en) * 2006-05-26 2008-05-06 Freescale Semiconductor, Inc. Nonvolatile memory having latching sense amplifier and method of operation
US8315119B2 (en) * 2009-02-26 2012-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. Sense amplifier scheme for low voltage SRAM and register files
US9564855B2 (en) 2015-02-10 2017-02-07 Analog Devices Global Apparatus and system for rail-to-rail amplifier

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2611330B1 (fr) * 1987-02-24 1989-05-05 Thomson Semiconducteurs Amplificateur de lecture pour memoire
JP2569538B2 (ja) * 1987-03-17 1997-01-08 ソニー株式会社 メモリ装置
JPH03116493A (ja) * 1989-09-28 1991-05-17 Toshiba Micro Electron Kk センスアンプ回路
KR960001860B1 (ko) * 1993-06-05 1996-02-06 삼성전자주식회사 반도체집적회로의 데이타 입출력선 센싱회로
JPH0883491A (ja) * 1994-09-13 1996-03-26 Mitsubishi Denki Eng Kk データ読出回路
JP2000011661A (ja) * 1998-06-26 2000-01-14 Nec Corp データアウトバッファ回路
JP2001084785A (ja) * 1999-09-17 2001-03-30 Nec Corp センスアンプ回路及び半導体記憶装置

Also Published As

Publication number Publication date
US20020176298A1 (en) 2002-11-28
US6665215B2 (en) 2003-12-16
FR2823362A1 (fr) 2002-10-11

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20081231