FR2778012B1 - Dispositif et procede de lecture de cellules de memoire eeprom - Google Patents
Dispositif et procede de lecture de cellules de memoire eepromInfo
- Publication number
- FR2778012B1 FR2778012B1 FR9805330A FR9805330A FR2778012B1 FR 2778012 B1 FR2778012 B1 FR 2778012B1 FR 9805330 A FR9805330 A FR 9805330A FR 9805330 A FR9805330 A FR 9805330A FR 2778012 B1 FR2778012 B1 FR 2778012B1
- Authority
- FR
- France
- Prior art keywords
- memory cells
- eeprom memory
- reading eeprom
- reading
- cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9805330A FR2778012B1 (fr) | 1998-04-28 | 1998-04-28 | Dispositif et procede de lecture de cellules de memoire eeprom |
US09/300,527 US6219277B1 (en) | 1998-04-28 | 1999-04-27 | Device and method for the reading of EEPROM cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9805330A FR2778012B1 (fr) | 1998-04-28 | 1998-04-28 | Dispositif et procede de lecture de cellules de memoire eeprom |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2778012A1 FR2778012A1 (fr) | 1999-10-29 |
FR2778012B1 true FR2778012B1 (fr) | 2001-09-28 |
Family
ID=9525770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9805330A Expired - Fee Related FR2778012B1 (fr) | 1998-04-28 | 1998-04-28 | Dispositif et procede de lecture de cellules de memoire eeprom |
Country Status (2)
Country | Link |
---|---|
US (1) | US6219277B1 (fr) |
FR (1) | FR2778012B1 (fr) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001291389A (ja) * | 2000-03-31 | 2001-10-19 | Hitachi Ltd | 半導体集積回路 |
US6538922B1 (en) | 2000-09-27 | 2003-03-25 | Sandisk Corporation | Writable tracking cells |
US6584017B2 (en) * | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
US6535426B2 (en) | 2001-08-02 | 2003-03-18 | Stmicroelectronics, Inc. | Sense amplifier circuit and method for nonvolatile memory devices |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
EP1426965A1 (fr) * | 2002-12-04 | 2004-06-09 | STMicroelectronics S.r.l. | Circuit de lecture pour une cellule mémoire non-volatile, en particulier fonctionnant sous faible tension d'alimentation et hautes charges capacitives |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US7237074B2 (en) | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
US7301807B2 (en) | 2003-10-23 | 2007-11-27 | Sandisk Corporation | Writable tracking cells |
US7652930B2 (en) * | 2004-04-01 | 2010-01-26 | Saifun Semiconductors Ltd. | Method, circuit and system for erasing one or more non-volatile memory cells |
DE102004045207B3 (de) * | 2004-09-17 | 2006-05-04 | Infineon Technologies Ag | Verfahren und Schaltungsanordnung zum Auslesen einer Flash-/EEPROM-Speicherzelle |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
DE102004055466B4 (de) * | 2004-11-17 | 2006-09-21 | Infineon Technologies Ag | Einrichtung und Verfahren zum Messen von Speicherzell-Strömen |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
US8400841B2 (en) * | 2005-06-15 | 2013-03-19 | Spansion Israel Ltd. | Device to program adjacent storage cells of different NROM cells |
US7184313B2 (en) * | 2005-06-17 | 2007-02-27 | Saifun Semiconductors Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
EP1746645A3 (fr) | 2005-07-18 | 2009-01-21 | Saifun Semiconductors Ltd. | Matrice de mémoire avec espacement des lignes de mot inférieur aux limites lithographiques et méthode de fabrication |
US20070036007A1 (en) * | 2005-08-09 | 2007-02-15 | Saifun Semiconductors, Ltd. | Sticky bit buffer |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US20070255889A1 (en) * | 2006-03-22 | 2007-11-01 | Yoav Yogev | Non-volatile memory device and method of operating the device |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
ITMI20062211A1 (it) * | 2006-11-17 | 2008-05-18 | St Microelectronics Srl | Circuito e metodo per generare una tensione di riferimento in dispositivi di memoria a matrice di celle non volatili |
KR102025251B1 (ko) * | 2012-10-31 | 2019-09-25 | 삼성전자주식회사 | 메모리 시스템 및 그것의 프로그램 방법 |
FR3059497A1 (fr) * | 2016-11-25 | 2018-06-01 | Exagan | Procede et circuit de commande d'un dispositif de commutation d'un circuit de puissance |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6173300A (ja) * | 1984-09-17 | 1986-04-15 | Toshiba Corp | 半導体記憶装置 |
US5406514A (en) * | 1991-12-21 | 1995-04-11 | Kawasaki Steel Corporation | Semiconductor memory |
JPH08180697A (ja) * | 1994-09-16 | 1996-07-12 | Texas Instr Inc <Ti> | センス増幅器用の基準電流を供給する基準回路及び方法 |
FR2734390B1 (fr) * | 1995-05-19 | 1997-06-13 | Sgs Thomson Microelectronics | Circuit de detection de courant pour la lecture d'une memoire en circuit integre |
JP3132637B2 (ja) * | 1995-06-29 | 2001-02-05 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
FR2760888B1 (fr) * | 1997-03-11 | 1999-05-07 | Sgs Thomson Microelectronics | Circuit de lecture pour memoire adapte a la mesure des courants de fuite |
-
1998
- 1998-04-28 FR FR9805330A patent/FR2778012B1/fr not_active Expired - Fee Related
-
1999
- 1999-04-27 US US09/300,527 patent/US6219277B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6219277B1 (en) | 2001-04-17 |
FR2778012A1 (fr) | 1999-10-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20091231 |