DE68919393D1 - Nichtflüchtige Speicherzelle und Verfahren zum Lesen. - Google Patents

Nichtflüchtige Speicherzelle und Verfahren zum Lesen.

Info

Publication number
DE68919393D1
DE68919393D1 DE68919393T DE68919393T DE68919393D1 DE 68919393 D1 DE68919393 D1 DE 68919393D1 DE 68919393 T DE68919393 T DE 68919393T DE 68919393 T DE68919393 T DE 68919393T DE 68919393 D1 DE68919393 D1 DE 68919393D1
Authority
DE
Germany
Prior art keywords
reading
memory cell
volatile memory
volatile
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919393T
Other languages
English (en)
Other versions
DE68919393T2 (de
Inventor
Kenneth Mobley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Publication of DE68919393D1 publication Critical patent/DE68919393D1/de
Application granted granted Critical
Publication of DE68919393T2 publication Critical patent/DE68919393T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
DE68919393T 1988-09-12 1989-08-15 Nichtflüchtige Speicherzelle und Verfahren zum Lesen. Expired - Fee Related DE68919393T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/243,414 US4888733A (en) 1988-09-12 1988-09-12 Non-volatile memory cell and sensing method

Publications (2)

Publication Number Publication Date
DE68919393D1 true DE68919393D1 (de) 1994-12-22
DE68919393T2 DE68919393T2 (de) 1995-03-30

Family

ID=22918691

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68919393T Expired - Fee Related DE68919393T2 (de) 1988-09-12 1989-08-15 Nichtflüchtige Speicherzelle und Verfahren zum Lesen.
DE198989308273T Pending DE359404T1 (de) 1988-09-12 1989-08-15 Nichtfluechtige speicherzelle und abfuehlverfahren.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE198989308273T Pending DE359404T1 (de) 1988-09-12 1989-08-15 Nichtfluechtige speicherzelle und abfuehlverfahren.

Country Status (5)

Country Link
US (1) US4888733A (de)
EP (1) EP0359404B1 (de)
JP (1) JPH0734315B2 (de)
AU (1) AU595147B1 (de)
DE (2) DE68919393T2 (de)

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US5192704A (en) * 1989-06-30 1993-03-09 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell
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US5191510A (en) * 1992-04-29 1993-03-02 Ramtron International Corporation Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
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US5589284A (en) * 1994-08-01 1996-12-31 Texas Instruments Incorporated Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
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US5487032A (en) * 1994-11-10 1996-01-23 Symetrix Corporation Method and apparatus for reduced fatigue in ferroelectric memory elements
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US5592410A (en) 1995-04-10 1997-01-07 Ramtron International Corporation Circuit and method for reducing a compensation of a ferroelectric capacitor by multiple pulsing of the plate line following a write operation
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US5677865A (en) * 1995-09-11 1997-10-14 Micron Technology, Inc. Ferroelectric memory using reference charge circuit
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US5638318A (en) * 1995-09-11 1997-06-10 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
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US5721699A (en) * 1996-03-18 1998-02-24 Symetrix Corporation Ferroelectric memory with feedback circuit
US5955755A (en) * 1996-03-25 1999-09-21 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor storage device and method for manufacturing the same
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US5990513A (en) * 1996-10-08 1999-11-23 Ramtron International Corporation Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
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US5912846A (en) * 1997-02-28 1999-06-15 Ramtron International Corporation Serial ferroelectric random access memory architecture to equalize column accesses and improve data retention reliability by mitigating imprint effects
US5852571A (en) * 1997-03-14 1998-12-22 Micron Technology, Inc. Nonvolatile ferroelectric memory with folded bit line architecture
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
KR19990030710A (ko) * 1997-10-02 1999-05-06 김영환 강유전체 메모리 장치 및 그 동작 방법
JPH11110976A (ja) * 1997-10-02 1999-04-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3495905B2 (ja) * 1998-02-19 2004-02-09 シャープ株式会社 半導体記憶装置
KR100268947B1 (ko) * 1998-04-03 2000-10-16 김영환 비휘발성 강유전체 메모리 및 그의 제어회로
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JP4047531B2 (ja) 2000-10-17 2008-02-13 株式会社東芝 強誘電体メモリ装置
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US6459609B1 (en) 2001-12-13 2002-10-01 Ramtron International Corporation Self referencing 1T/1C ferroelectric random access memory
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Also Published As

Publication number Publication date
AU595147B1 (en) 1990-03-22
EP0359404A3 (de) 1991-05-02
JPH0734315B2 (ja) 1995-04-12
JPH02113496A (ja) 1990-04-25
US4888733A (en) 1989-12-19
DE68919393T2 (de) 1995-03-30
EP0359404B1 (de) 1994-11-17
EP0359404A2 (de) 1990-03-21
DE359404T1 (de) 1990-10-18

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