DE4493150T1 - Nichtflüchtige Speichervorrichtung, nichtflüchtige Speicherzelle und Verfahren zum Einstellen des Schwellenwertes der nichtflüchtigen Speicherzelle und jedes der vielen Transistoren - Google Patents

Nichtflüchtige Speichervorrichtung, nichtflüchtige Speicherzelle und Verfahren zum Einstellen des Schwellenwertes der nichtflüchtigen Speicherzelle und jedes der vielen Transistoren

Info

Publication number
DE4493150T1
DE4493150T1 DE4493150T DE4493150T DE4493150T1 DE 4493150 T1 DE4493150 T1 DE 4493150T1 DE 4493150 T DE4493150 T DE 4493150T DE 4493150 T DE4493150 T DE 4493150T DE 4493150 T1 DE4493150 T1 DE 4493150T1
Authority
DE
Germany
Prior art keywords
volatile memory
memory cell
setting
threshold value
many transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE4493150T
Other languages
English (en)
Other versions
DE4493150C2 (de
Inventor
Hiroshi Gotou
Toshifumi Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
NKK Corp
Nippon Kokan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NKK Corp, Nippon Kokan Ltd filed Critical NKK Corp
Publication of DE4493150T1 publication Critical patent/DE4493150T1/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/565—Multilevel memory comprising elements in triple well structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
DE4493150T 1993-05-11 1994-05-11 Nichtflüchtige Speichervorrichtung, nichtflüchtige Speicherzelle und Verfahren zum Einstellen des Schwellenwertes der nichtflüchtigen Speicherzelle und jedes der vielen Transistoren Granted DE4493150T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10957393 1993-05-11
JP21029593 1993-08-25
JP29810393 1993-11-29
JP32721393 1993-12-24
PCT/JP1994/000759 WO1994027295A1 (en) 1993-05-11 1994-05-11 Non-volatile memory device and method for adjusting the threshold value thereof

Publications (1)

Publication Number Publication Date
DE4493150T1 true DE4493150T1 (de) 1995-07-20

Family

ID=27469740

Family Applications (2)

Application Number Title Priority Date Filing Date
DE4493150T Granted DE4493150T1 (de) 1993-05-11 1994-05-11 Nichtflüchtige Speichervorrichtung, nichtflüchtige Speicherzelle und Verfahren zum Einstellen des Schwellenwertes der nichtflüchtigen Speicherzelle und jedes der vielen Transistoren
DE4493150A Expired - Lifetime DE4493150C2 (de) 1993-05-11 1994-05-11 Nichtflüchtige Halbleiterspeichervorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE4493150A Expired - Lifetime DE4493150C2 (de) 1993-05-11 1994-05-11 Nichtflüchtige Halbleiterspeichervorrichtung

Country Status (7)

Country Link
US (2) US5748530A (de)
JP (1) JPH07508121A (de)
KR (1) KR0156590B1 (de)
DE (2) DE4493150T1 (de)
GB (1) GB2283345B (de)
TW (1) TW357336B (de)
WO (1) WO1994027295A1 (de)

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US6297989B1 (en) * 1999-02-26 2001-10-02 Micron Technology, Inc. Applications for non-volatile memory cells
US6380581B1 (en) 1999-02-26 2002-04-30 Micron Technology, Inc. DRAM technology compatible non volatile memory cells with capacitors connected to the gates of the transistors
US6256225B1 (en) 1999-02-26 2001-07-03 Micron Technology, Inc. Construction and application for non-volatile reprogrammable switches
US6452856B1 (en) * 1999-02-26 2002-09-17 Micron Technology, Inc. DRAM technology compatible processor/memory chips
JP3892612B2 (ja) * 1999-04-09 2007-03-14 株式会社東芝 半導体装置
KR100370164B1 (ko) * 2000-12-20 2003-01-30 주식회사 하이닉스반도체 비트라인의 누설전류 보상이 가능한 풀업회로
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US7177199B2 (en) * 2003-10-20 2007-02-13 Sandisk Corporation Behavior based programming of non-volatile memory
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US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7301817B2 (en) * 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
JP5012802B2 (ja) * 2006-07-25 2012-08-29 富士通株式会社 不揮発性半導体記憶装置
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Also Published As

Publication number Publication date
WO1994027295A1 (en) 1994-11-24
US5729494A (en) 1998-03-17
KR0156590B1 (ko) 1998-12-01
JPH07508121A (ja) 1995-09-07
DE4493150C2 (de) 2000-10-26
GB2283345B (en) 1997-11-12
TW357336B (en) 1999-05-01
GB9424539D0 (en) 1995-02-15
US5748530A (en) 1998-05-05
KR950702326A (ko) 1995-06-19
GB2283345A (en) 1995-05-03

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