DE69714353D1 - Nichtflüchtige Speicherzelle mit einzigem Gate und Verfahren zur Benutzung - Google Patents

Nichtflüchtige Speicherzelle mit einzigem Gate und Verfahren zur Benutzung

Info

Publication number
DE69714353D1
DE69714353D1 DE69714353T DE69714353T DE69714353D1 DE 69714353 D1 DE69714353 D1 DE 69714353D1 DE 69714353 T DE69714353 T DE 69714353T DE 69714353 T DE69714353 T DE 69714353T DE 69714353 D1 DE69714353 D1 DE 69714353D1
Authority
DE
Germany
Prior art keywords
memory cell
volatile memory
single gate
gate non
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69714353T
Other languages
English (en)
Other versions
DE69714353T2 (de
Inventor
Patrice M Parris
Yee-Chaung See
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69714353D1 publication Critical patent/DE69714353D1/de
Application granted granted Critical
Publication of DE69714353T2 publication Critical patent/DE69714353T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
DE69714353T 1996-06-03 1997-05-22 Nichtflüchtige Speicherzelle mit einzigem Gate und Verfahren zur Benutzung Expired - Fee Related DE69714353T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/657,127 US5777361A (en) 1996-06-03 1996-06-03 Single gate nonvolatile memory cell and method for accessing the same

Publications (2)

Publication Number Publication Date
DE69714353D1 true DE69714353D1 (de) 2002-09-05
DE69714353T2 DE69714353T2 (de) 2002-11-28

Family

ID=24635928

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69714353T Expired - Fee Related DE69714353T2 (de) 1996-06-03 1997-05-22 Nichtflüchtige Speicherzelle mit einzigem Gate und Verfahren zur Benutzung

Country Status (5)

Country Link
US (1) US5777361A (de)
EP (1) EP0812019B1 (de)
JP (1) JP3909116B2 (de)
KR (1) KR100466902B1 (de)
DE (1) DE69714353T2 (de)

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US6373094B2 (en) 1998-09-11 2002-04-16 Texas Instruments Incorporated EEPROM cell using conventional process steps
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FI115426B (fi) * 2000-12-22 2005-04-29 Iws Int Oy Kulkuneuvon sähkönjakelujärjestelmän älykäs sulakerasia
US6664909B1 (en) 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
TWI242215B (en) * 2002-04-16 2005-10-21 Macronix Int Co Ltd Nonvolatile memory cell for prevention from second bit effect
US20040206999A1 (en) * 2002-05-09 2004-10-21 Impinj, Inc., A Delaware Corporation Metal dielectric semiconductor floating gate variable capacitor
US6958646B1 (en) 2002-05-28 2005-10-25 Impinj, Inc. Autozeroing floating-gate amplifier
US7221596B2 (en) * 2002-07-05 2007-05-22 Impinj, Inc. pFET nonvolatile memory
US6950342B2 (en) * 2002-07-05 2005-09-27 Impinj, Inc. Differential floating gate nonvolatile memories
US7212446B2 (en) * 2002-09-16 2007-05-01 Impinj, Inc. Counteracting overtunneling in nonvolatile memory cells using charge extraction control
US7149118B2 (en) * 2002-09-16 2006-12-12 Impinj, Inc. Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
US20050030827A1 (en) * 2002-09-16 2005-02-10 Impinj, Inc., A Delaware Corporation PMOS memory cell
US6822285B1 (en) 2003-07-31 2004-11-23 Atmel Corporation EEPROM with multi-member floating gate
US7075127B2 (en) * 2004-01-29 2006-07-11 Infineon Technologies Ag Single-poly 2-transistor based fuse element
US7078761B2 (en) * 2004-03-05 2006-07-18 Chingis Technology Corporation Nonvolatile memory solution using single-poly pFlash technology
US7283390B2 (en) 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) * 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US7257033B2 (en) * 2005-03-17 2007-08-14 Impinj, Inc. Inverter non-volatile memory cell and array system
US7679957B2 (en) * 2005-03-31 2010-03-16 Virage Logic Corporation Redundant non-volatile memory cell
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
JP5008412B2 (ja) * 2007-02-01 2012-08-22 エルジー ディスプレイ カンパニー リミテッド 画像表示装置、および画像表示装置の駆動方法
US7719896B1 (en) 2007-04-24 2010-05-18 Virage Logic Corporation Configurable single bit/dual bits memory
US7800156B2 (en) * 2008-02-25 2010-09-21 Tower Semiconductor Ltd. Asymmetric single poly NMOS non-volatile memory cell
US8344440B2 (en) * 2008-02-25 2013-01-01 Tower Semiconductor Ltd. Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times
US7859043B2 (en) * 2008-02-25 2010-12-28 Tower Semiconductor Ltd. Three-terminal single poly NMOS non-volatile memory cell
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
US9805806B2 (en) 2015-10-16 2017-10-31 Ememory Technology Inc. Non-volatile memory cell and method of operating the same
US10797063B2 (en) * 2018-01-10 2020-10-06 Ememory Technology Inc. Single-poly nonvolatile memory unit

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US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
GB1392599A (en) * 1971-07-28 1975-04-30 Mullard Ltd Semiconductor memory elements
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US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device
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US3938108A (en) * 1975-02-03 1976-02-10 Intel Corporation Erasable programmable read-only memory
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DE3816358A1 (de) * 1988-05-13 1989-11-23 Eurosil Electronic Gmbh Nichtfluechtige speicherzelle und verfahren zur herstellung
JPH02133967A (ja) * 1988-11-14 1990-05-23 Sharp Corp 半導体装置
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JP2832998B2 (ja) * 1989-04-27 1998-12-09 日本電気株式会社 不揮発性ｍｏｓ半導体記憶装置
US5027171A (en) * 1989-08-28 1991-06-25 The United States Of America As Represented By The Secretary Of The Navy Dual polarity floating gate MOS analog memory device
DE69032937T2 (de) * 1990-07-24 1999-06-17 St Microelectronics Srl Verfahren zur Herstellung einer N-Kanal-EPROM-Zelle mit einer einzigen Polysiliziumschicht
FR2690008B1 (fr) * 1991-05-29 1994-06-10 Gemplus Card Int Memoire avec cellule memoire eeprom a effet capacitif et procede de lecture d'une telle cellule memoire.
US5268585A (en) * 1991-07-01 1993-12-07 Sharp Kabushiki Kaisha Non-volatile memory and method of manufacturing the same
US5289026A (en) * 1991-08-14 1994-02-22 Intel Corporation Asymmetric floating gate overlap for improved device characteristics in buried bit-line devices
US5461249A (en) * 1991-10-31 1995-10-24 Rohm Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method therefor
FR2683664A1 (fr) * 1991-11-13 1993-05-14 Sgs Thomson Microelectronics Memoire integree electriquement programmable a un seuil transistor.
JPH05299578A (ja) * 1992-04-17 1993-11-12 Rohm Co Ltd 半導体装置およびその製法
EP0646288B1 (de) * 1992-06-19 1998-12-16 Lattice Semiconductor Corporation Flash e?2 prom zelle mit nur einer polysiliziumschicht
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US5418390A (en) * 1993-03-19 1995-05-23 Lattice Semiconductor Corporation Single polysilicon layer E2 PROM cell
JP2596695B2 (ja) * 1993-05-07 1997-04-02 インターナショナル・ビジネス・マシーンズ・コーポレイション Ｅｅｐｒｏｍ
US5455788A (en) * 1993-08-24 1995-10-03 Honeywell Inc. SRAM to ROM programming connections to avoid parasitic devices and electrical overstress sensitivity
US5397715A (en) * 1993-10-21 1995-03-14 Micrel, Incorporated MOS transistor having increased gate-drain capacitance
US5424233A (en) * 1994-05-06 1995-06-13 United Microflectronics Corporation Method of making electrically programmable and erasable memory device with a depression
US5376572A (en) * 1994-05-06 1994-12-27 United Microelectronics Corporation Method of making an electrically erasable programmable memory device with improved erase and write operation
US5440158A (en) * 1994-07-05 1995-08-08 Taiwan Semiconductor Manufacturing Company Ltd. Electrically programmable memory device with improved dual floating gates
US5554552A (en) * 1995-04-03 1996-09-10 Taiwan Semiconductor Manufacturing Company PN junction floating gate EEPROM, flash EPROM device and method of manufacture thereof

Also Published As

Publication number Publication date
US5777361A (en) 1998-07-07
KR980006410A (ko) 1998-03-30
JPH1065030A (ja) 1998-03-06
EP0812019A1 (de) 1997-12-10
EP0812019B1 (de) 2002-07-31
JP3909116B2 (ja) 2007-04-25
DE69714353T2 (de) 2002-11-28
KR100466902B1 (ko) 2005-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee