DE69832609D1 - Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren - Google Patents

Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren

Info

Publication number
DE69832609D1
DE69832609D1 DE69832609T DE69832609T DE69832609D1 DE 69832609 D1 DE69832609 D1 DE 69832609D1 DE 69832609 T DE69832609 T DE 69832609T DE 69832609 T DE69832609 T DE 69832609T DE 69832609 D1 DE69832609 D1 DE 69832609D1
Authority
DE
Germany
Prior art keywords
memory device
corresponding method
eeprom memory
emulated eeprom
emulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69832609T
Other languages
English (en)
Inventor
Maurizio Peri
Alessandro Brigati
Marco Olivo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69832609D1 publication Critical patent/DE69832609D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/20—Suspension of programming or erasing cells in an array in order to read other cells in it
DE69832609T 1998-09-30 1998-09-30 Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren Expired - Lifetime DE69832609D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98203302A EP0991081B1 (de) 1998-09-30 1998-09-30 Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren

Publications (1)

Publication Number Publication Date
DE69832609D1 true DE69832609D1 (de) 2006-01-05

Family

ID=8234174

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69832609T Expired - Lifetime DE69832609D1 (de) 1998-09-30 1998-09-30 Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren

Country Status (3)

Country Link
US (1) US6904400B1 (de)
EP (1) EP0991081B1 (de)
DE (1) DE69832609D1 (de)

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US9110782B2 (en) 2012-04-27 2015-08-18 Freescale Semiconductor, Inc. Emulated electrically erasable memory parallel record management
US9047959B1 (en) * 2012-07-25 2015-06-02 Kabushiki Kaisha Toshiba Data storage device, memory control method, and electronic device with data storage device
US9424176B2 (en) * 2013-02-25 2016-08-23 Freescale Semiconductor, Inc. Robust sector ID scheme for tracking dead sectors to automate search and copydown
DE102014203062A1 (de) * 2014-02-20 2015-08-20 Bayerische Motoren Werke Aktiengesellschaft Vergrößern des verfügbaren FLASH-Speichers eines Micro-Controllers
US9563491B2 (en) 2014-09-12 2017-02-07 Nxp Usa, Inc. High voltage failure recovery for emulated electrically erasable (EEE) memory system
US10303385B1 (en) * 2017-03-07 2019-05-28 Xilinx, Inc. Updating block random access memory contents using memory emulation
US10546081B2 (en) * 2017-09-20 2020-01-28 Mentor Graphics Corporation Full memory logical erase for circuit verification
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US11797230B2 (en) * 2021-12-14 2023-10-24 Hewlett-Packard Development Company, L.P. Bios variables storage
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Also Published As

Publication number Publication date
EP0991081B1 (de) 2005-11-30
EP0991081A1 (de) 2000-04-05
US6904400B1 (en) 2005-06-07

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