DE69815600D1 - Ferroelektrische Speicheranordnung - Google Patents

Ferroelektrische Speicheranordnung

Info

Publication number
DE69815600D1
DE69815600D1 DE69815600T DE69815600T DE69815600D1 DE 69815600 D1 DE69815600 D1 DE 69815600D1 DE 69815600 T DE69815600 T DE 69815600T DE 69815600 T DE69815600 T DE 69815600T DE 69815600 D1 DE69815600 D1 DE 69815600D1
Authority
DE
Germany
Prior art keywords
memory device
ferroelectric memory
ferroelectric
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69815600T
Other languages
English (en)
Other versions
DE69815600T2 (de
Inventor
Junichi Yamada
Hiroki Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Application granted granted Critical
Publication of DE69815600D1 publication Critical patent/DE69815600D1/de
Publication of DE69815600T2 publication Critical patent/DE69815600T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
DE69815600T 1997-07-16 1998-07-16 Ferroelektrische Speicheranordnung Expired - Fee Related DE69815600T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19120797A JP3196824B2 (ja) 1997-07-16 1997-07-16 強誘電体メモリ装置
JP19120797 1997-07-16

Publications (2)

Publication Number Publication Date
DE69815600D1 true DE69815600D1 (de) 2003-07-24
DE69815600T2 DE69815600T2 (de) 2004-04-29

Family

ID=16270693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69815600T Expired - Fee Related DE69815600T2 (de) 1997-07-16 1998-07-16 Ferroelektrische Speicheranordnung

Country Status (6)

Country Link
US (1) US5926413A (de)
EP (1) EP0892408B1 (de)
JP (1) JP3196824B2 (de)
KR (1) KR100293622B1 (de)
DE (1) DE69815600T2 (de)
TW (1) TW388876B (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11273360A (ja) * 1998-03-17 1999-10-08 Toshiba Corp 強誘電体記憶装置
JPH11273362A (ja) * 1998-03-18 1999-10-08 Sharp Corp 不揮発性半導体記憶装置
KR100363102B1 (ko) * 1998-07-15 2003-02-19 주식회사 하이닉스반도체 강유전체 메모리
JP4490514B2 (ja) * 1998-10-08 2010-06-30 株式会社東芝 強誘電体メモリ
KR100333702B1 (ko) * 1999-06-28 2002-04-24 박종섭 강유전체 메모리 장치
KR100296917B1 (ko) * 1999-06-28 2001-07-12 박종섭 강유전체 메모리 소자의 기준 전압 발생 장치
JP3703655B2 (ja) * 1999-08-11 2005-10-05 株式会社東芝 タイミング信号発生回路
JP3551858B2 (ja) 1999-09-14 2004-08-11 日本電気株式会社 半導体メモリ装置
KR100348577B1 (ko) 1999-09-30 2002-08-13 동부전자 주식회사 강유전체 메모리
KR100348576B1 (ko) 1999-09-30 2002-08-13 동부전자 주식회사 강유전체 메모리
US6573772B1 (en) * 2000-06-30 2003-06-03 Intel Corporation Method and apparatus for locking self-timed pulsed clock
JP2002197854A (ja) 2000-12-22 2002-07-12 Matsushita Electric Ind Co Ltd 強誘電体メモリ装置
JP4329919B2 (ja) * 2001-03-13 2009-09-09 Ｏｋｉセミコンダクタ株式会社 半導体メモリおよび半導体メモリの駆動方法
KR100460767B1 (ko) * 2001-12-20 2004-12-09 주식회사 하이닉스반도체 강유전체 메모리 소자의 기준전압 발생장치
US6731554B1 (en) * 2002-11-20 2004-05-04 Infineon Technologies Ag 2T2C signal margin test mode using resistive element
US6826099B2 (en) * 2002-11-20 2004-11-30 Infineon Technologies Ag 2T2C signal margin test mode using a defined charge and discharge of BL and /BL
US6876590B2 (en) 2002-11-20 2005-04-05 Infineon Technologies, Ag 2T2C signal margin test mode using a defined charge exchange between BL and/BL
JP4161951B2 (ja) 2004-09-16 2008-10-08 セイコーエプソン株式会社 強誘電体メモリ装置
JP4470889B2 (ja) 2006-01-25 2010-06-02 セイコーエプソン株式会社 分極転送デバイス、及びその転送制御方法
JP4983062B2 (ja) 2006-03-20 2012-07-25 富士通セミコンダクター株式会社 メモリ装置
US8645793B2 (en) 2008-06-03 2014-02-04 Marvell International Ltd. Statistical tracking for flash memory
US7649793B1 (en) 2006-05-04 2010-01-19 Marvell International Ltd. Channel estimation for multi-level memories using pilot signals
KR100715979B1 (ko) * 2006-05-25 2007-05-08 경북대학교 산학협력단 피형 금속 산화막 반도체 게이팅 셀을 이용한 강유전체메모리
US7808834B1 (en) 2007-04-13 2010-10-05 Marvell International Ltd. Incremental memory refresh
US8031526B1 (en) 2007-08-23 2011-10-04 Marvell International Ltd. Write pre-compensation for nonvolatile memory
US8189381B1 (en) 2007-08-28 2012-05-29 Marvell International Ltd. System and method for reading flash memory cells
US8085605B2 (en) 2007-08-29 2011-12-27 Marvell World Trade Ltd. Sequence detection for flash memory with inter-cell interference
US9911501B2 (en) * 2016-05-24 2018-03-06 Silicon Storage Technology, Inc. Sensing amplifier comprising a built-in sensing offset for flash memory devices
US9899073B2 (en) 2016-06-27 2018-02-20 Micron Technology, Inc. Multi-level storage in ferroelectric memory
US11482529B2 (en) 2019-02-27 2022-10-25 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
JP2020155187A (ja) 2019-03-22 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 強誘電体メモリおよびそのメモリ素子
US10964357B2 (en) * 2019-04-24 2021-03-30 Marvell Asia Pte., Ltd. Skewed sense amplifier for single-ended sensing
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11737283B1 (en) 2021-11-01 2023-08-22 Kepler Computing Inc. Method of forming a stack of non-planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell
US11482270B1 (en) 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0713877B2 (ja) * 1988-10-19 1995-02-15 株式会社東芝 半導体メモリ
JP3169599B2 (ja) * 1990-08-03 2001-05-28 株式会社日立製作所 半導体装置、その駆動方法、その読み出し方法
US5461713A (en) * 1991-05-10 1995-10-24 Sgs-Thomson Microelectronics S.R.L. Current offset sense amplifier of a modulated current or current unbalance type for programmable memories
US5539279A (en) * 1993-06-23 1996-07-23 Hitachi, Ltd. Ferroelectric memory
JP3186485B2 (ja) * 1995-01-04 2001-07-11 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
JPH097377A (ja) * 1995-06-20 1997-01-10 Sony Corp 強誘電体記憶装置
EP0767464B1 (de) * 1995-09-08 2003-11-19 Fujitsu Limited Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher
US5677865A (en) * 1995-09-11 1997-10-14 Micron Technology, Inc. Ferroelectric memory using reference charge circuit
JPH09134594A (ja) * 1995-11-08 1997-05-20 Hitachi Ltd 半導体不揮発メモリ
US5764561A (en) * 1995-11-16 1998-06-09 Rohm Co., Ltd. Ferroelectric memory devices and method of using ferroelectric capacitors

Also Published As

Publication number Publication date
JP3196824B2 (ja) 2001-08-06
KR100293622B1 (ko) 2001-07-12
JPH1139882A (ja) 1999-02-12
DE69815600T2 (de) 2004-04-29
EP0892408A2 (de) 1999-01-20
EP0892408A3 (de) 2000-08-16
EP0892408B1 (de) 2003-06-18
US5926413A (en) 1999-07-20
TW388876B (en) 2000-05-01
KR19990013853A (ko) 1999-02-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee