DE69621293D1 - Ferroelektrische Speichervorrichtung - Google Patents

Ferroelektrische Speichervorrichtung

Info

Publication number
DE69621293D1
DE69621293D1 DE69621293T DE69621293T DE69621293D1 DE 69621293 D1 DE69621293 D1 DE 69621293D1 DE 69621293 T DE69621293 T DE 69621293T DE 69621293 T DE69621293 T DE 69621293T DE 69621293 D1 DE69621293 D1 DE 69621293D1
Authority
DE
Germany
Prior art keywords
storage device
ferroelectric storage
ferroelectric
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69621293T
Other languages
English (en)
Other versions
DE69621293T2 (de
Inventor
Hiroshige Hirano
Nobuyuki Moriwaki
Tatsumi Sumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69621293D1 publication Critical patent/DE69621293D1/de
Application granted granted Critical
Publication of DE69621293T2 publication Critical patent/DE69621293T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69621293T 1995-08-02 1996-08-01 Ferroelektrische Speichervorrichtung Expired - Fee Related DE69621293T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19735195 1995-08-02

Publications (2)

Publication Number Publication Date
DE69621293D1 true DE69621293D1 (de) 2002-06-27
DE69621293T2 DE69621293T2 (de) 2002-12-12

Family

ID=16373046

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69627724T Expired - Fee Related DE69627724T2 (de) 1995-08-02 1996-08-01 Ferroelektrischer Speicher mit Rücksetzschaltung
DE69621293T Expired - Fee Related DE69621293T2 (de) 1995-08-02 1996-08-01 Ferroelektrische Speichervorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69627724T Expired - Fee Related DE69627724T2 (de) 1995-08-02 1996-08-01 Ferroelektrischer Speicher mit Rücksetzschaltung

Country Status (5)

Country Link
US (1) US5675530A (de)
EP (2) EP1069573B1 (de)
KR (1) KR100243883B1 (de)
DE (2) DE69627724T2 (de)
SG (1) SG64943A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230435B2 (ja) * 1996-05-17 2001-11-19 日本電気株式会社 半導体記憶装置
US6097624A (en) 1997-09-17 2000-08-01 Samsung Electronics Co., Ltd. Methods of operating ferroelectric memory devices having reconfigurable bit lines
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법
KR100219519B1 (ko) * 1997-01-10 1999-09-01 윤종용 페로일렉트릭 플로팅 게이트 램을 구비하는 반도체 메모리 디바이스 및 그 제조방법
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
KR100282045B1 (ko) * 1998-08-07 2001-03-02 윤종용 강유전체 커패시터를 구비한 불 휘발성 다이나믹 랜덤 엑세스메모리
DE19952311B4 (de) 1999-10-29 2006-07-13 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen vom 2-Transistor/2-Kondensator-Typ
US6809949B2 (en) 2002-05-06 2004-10-26 Symetrix Corporation Ferroelectric memory
US6906945B2 (en) * 2003-11-18 2005-06-14 Texas Instruments Incorporated Bitline precharge timing scheme to improve signal margin
JP2005190565A (ja) * 2003-12-25 2005-07-14 Seiko Epson Corp 強誘電体メモリ装置、電子機器、及び駆動方法
JP4477629B2 (ja) * 2004-03-24 2010-06-09 富士通マイクロエレクトロニクス株式会社 強誘電体メモリ
KR100673901B1 (ko) * 2005-01-28 2007-01-25 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
KR101064377B1 (ko) 2009-05-28 2011-09-14 한양대학교 산학협력단 다이오드로 구성된 셀을 가지는 비휘발성 메모리
US9361972B1 (en) * 2015-03-20 2016-06-07 Intel Corporation Charge level maintenance in a memory
KR102188490B1 (ko) 2016-08-31 2020-12-09 마이크론 테크놀로지, 인크. 강유전체 메모리를 포함하며 강유전체 메모리에 액세스하기 위한 장치 및 방법
KR102369776B1 (ko) 2016-08-31 2022-03-03 마이크론 테크놀로지, 인크. 강유전 메모리 셀
KR102233267B1 (ko) * 2016-08-31 2021-03-30 마이크론 테크놀로지, 인크. 강유전체 메모리를 포함하며 강유전체 메모리를 작동하기 위한 장치 및 방법
WO2018044510A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including two transistor-one capacitor memory and for accessing same
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3932848A (en) * 1975-01-20 1976-01-13 Intel Corporation Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
CA1340340C (en) * 1987-06-02 1999-01-26 Joseph T. Evans, Jr. Non-volatile memory circuit using ferroelectric capacitor storage element
JPH0713877B2 (ja) * 1988-10-19 1995-02-15 株式会社東芝 半導体メモリ
JP3169599B2 (ja) * 1990-08-03 2001-05-28 株式会社日立製作所 半導体装置、その駆動方法、その読み出し方法
JP3162718B2 (ja) * 1991-12-13 2001-05-08 サイメトリックス，コーポレイション 集積回路メモリー
JP2930168B2 (ja) * 1992-10-09 1999-08-03 シャープ株式会社 強誘電体メモリ装置の駆動方法
KR970000870B1 (ko) * 1992-12-02 1997-01-20 마쯔시다덴기산교 가부시기가이샤 반도체메모리장치
US5430671A (en) * 1993-04-09 1995-07-04 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ

Also Published As

Publication number Publication date
DE69627724T2 (de) 2003-10-23
EP1069573B1 (de) 2003-04-23
EP0757354A3 (de) 1998-11-04
SG64943A1 (en) 1999-05-25
KR100243883B1 (ko) 2000-02-01
EP1069573A1 (de) 2001-01-17
DE69627724D1 (de) 2003-05-28
DE69621293T2 (de) 2002-12-12
US5675530A (en) 1997-10-07
KR970012696A (ko) 1997-03-29
EP0757354A2 (de) 1997-02-05
EP0757354B1 (de) 2002-05-22

Similar Documents

Publication Publication Date Title
DE69617301D1 (de) Speichervorrichtung
DE69517142D1 (de) Ferroelektrische Speicheranordnung
DE69408585D1 (de) Lagervorrichtung
DE69518693D1 (de) Speichervorrichtung
DE19581764T1 (de) Speichereinrichtung
DE69815600D1 (de) Ferroelektrische Speicheranordnung
DE59701944D1 (de) Lagervorrichtung
DE69626746D1 (de) Plattenspeichergerät
DE69625870T2 (de) Lagereinheit
DE69621190T2 (de) Optisches Speichergerät
DE69621293D1 (de) Ferroelektrische Speichervorrichtung
DK0726214T3 (da) ãgopbevaringsorgan
DE69925797D1 (de) Ferroelektrische Speicheranordnung
DE69505661D1 (de) Speichereinrichtung
DE69525637D1 (de) Speichervorrichtung
DE69619752T2 (de) Fernsehdatenspeichervorrichtung
DE69722703D1 (de) Speichervorrichtung
NO941789L (no) Opplagringsanordning for transduser
DE69518660T2 (de) Lagervorrichtung
DE69420363D1 (de) Speichervorrichtung
KR960037672U (ko) 수납형 핸들장치
SE9503633D0 (sv) Lagringsanordning
SE9503148D0 (sv) Lagringsanordning
DE4397188T1 (de) Lagervorrichtung
ATA31095A (de) Kleinteilelagervorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8339 Ceased/non-payment of the annual fee