DE69517142D1 - Ferroelektrische Speicheranordnung - Google Patents

Ferroelektrische Speicheranordnung

Info

Publication number
DE69517142D1
DE69517142D1 DE69517142T DE69517142T DE69517142D1 DE 69517142 D1 DE69517142 D1 DE 69517142D1 DE 69517142 T DE69517142 T DE 69517142T DE 69517142 T DE69517142 T DE 69517142T DE 69517142 D1 DE69517142 D1 DE 69517142D1
Authority
DE
Germany
Prior art keywords
memory device
ferroelectric memory
ferroelectric
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69517142T
Other languages
English (en)
Other versions
DE69517142T2 (de
Inventor
Hiroki Koike
Tohru Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69517142D1 publication Critical patent/DE69517142D1/de
Application granted granted Critical
Publication of DE69517142T2 publication Critical patent/DE69517142T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
DE69517142T 1994-12-27 1995-12-21 Ferroelektrische Speicheranordnung Expired - Lifetime DE69517142T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32455894A JP3183076B2 (ja) 1994-12-27 1994-12-27 強誘電体メモリ装置

Publications (2)

Publication Number Publication Date
DE69517142D1 true DE69517142D1 (de) 2000-06-29
DE69517142T2 DE69517142T2 (de) 2001-02-01

Family

ID=18167160

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517142T Expired - Lifetime DE69517142T2 (de) 1994-12-27 1995-12-21 Ferroelektrische Speicheranordnung

Country Status (5)

Country Link
US (1) US5671174A (de)
EP (1) EP0720171B1 (de)
JP (1) JP3183076B2 (de)
KR (1) KR0170008B1 (de)
DE (1) DE69517142T2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3723599B2 (ja) * 1995-04-07 2005-12-07 株式会社ルネサステクノロジ 半導体記憶装置
JP2937254B2 (ja) * 1996-04-25 1999-08-23 日本電気株式会社 強誘電体メモリの修復方法
KR19990030710A (ko) * 1997-10-02 1999-05-06 김영환 강유전체 메모리 장치 및 그 동작 방법
US5956266A (en) * 1997-11-14 1999-09-21 Ramtron International Corporation Reference cell for a 1T/1C ferroelectric memory
US5880989A (en) * 1997-11-14 1999-03-09 Ramtron International Corporation Sensing methodology for a 1T/1C ferroelectric memory
US5995406A (en) * 1997-11-14 1999-11-30 Ramtron International Corporation Plate line segmentation in a 1T/1C ferroelectric memory
US6002634A (en) * 1997-11-14 1999-12-14 Ramtron International Corporation Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
US5978251A (en) * 1997-11-14 1999-11-02 Ramtron International Corporation Plate line driver circuit for a 1T/1C ferroelectric memory
US20050122765A1 (en) * 1997-11-14 2005-06-09 Allen Judith E. Reference cell configuration for a 1T/1C ferroelectric memory
US5986919A (en) * 1997-11-14 1999-11-16 Ramtron International Corporation Reference cell configuration for a 1T/1C ferroelectric memory
US5969980A (en) * 1997-11-14 1999-10-19 Ramtron International Corporation Sense amplifier configuration for a 1T/1C ferroelectric memory
US6028783A (en) 1997-11-14 2000-02-22 Ramtron International Corporation Memory cell configuration for a 1T/1C ferroelectric memory
US5892728A (en) * 1997-11-14 1999-04-06 Ramtron International Corporation Column decoder configuration for a 1T/1C ferroelectric memory
KR100275107B1 (ko) * 1997-12-30 2000-12-15 김영환 강유전체메모리장치및그구동방법
US6016390A (en) * 1998-01-29 2000-01-18 Artisan Components, Inc. Method and apparatus for eliminating bitline voltage offsets in memory devices
JP3487753B2 (ja) * 1998-02-24 2004-01-19 シャープ株式会社 半導体記憶装置
DE19830568A1 (de) * 1998-07-08 1999-10-14 Siemens Ag Ferroelektrische Speicheranordnung
DE19832994C2 (de) * 1998-07-22 2003-02-13 Infineon Technologies Ag Ferroelektrische Speicheranordnung
KR100303782B1 (ko) * 1998-10-28 2001-09-24 박종섭 두개의 공급전위를 사용하여 메모리소자의 셀 플레이트 라인을구동하기 위한 장치
US6310797B1 (en) * 1998-12-02 2001-10-30 Seiko Epson Corporation Drive method for FeRAM memory cell and drive device for the memory cell
JP2000187990A (ja) 1998-12-24 2000-07-04 Nec Corp センスアンプ回路及びそれを用いた記憶装置並びにそれに用いる読出し方法
DE19919359C2 (de) * 1999-04-28 2001-03-15 Siemens Ag Integrierter Speicher mit an gegenüberliegenden Seiten eines Zellenfeldes angeordneten Leseverstärkern
JP4350222B2 (ja) * 1999-08-26 2009-10-21 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリ装置の動作方法
KR100339415B1 (ko) * 1999-09-08 2002-05-31 박종섭 불휘발성 강유전체 메모리 장치
JP3688232B2 (ja) * 2001-09-04 2005-08-24 松下電器産業株式会社 強誘電体記憶装置
JP4214708B2 (ja) * 2002-03-27 2009-01-28 セイコーエプソン株式会社 強誘電体記憶装置及びその駆動方法
ITMI20020673A1 (it) * 2002-03-29 2003-09-29 St Microelectronics Srl Metodo e relativo circuito di accesso a locazioni di una memoria ferroelettrica
US6538914B1 (en) * 2002-04-01 2003-03-25 Ramtron International Corporation Ferroelectric memory with bit-plate parallel architecture and operating method thereof
JP4251815B2 (ja) * 2002-04-04 2009-04-08 株式会社ルネサステクノロジ 半導体記憶装置
JP4146680B2 (ja) * 2002-07-18 2008-09-10 松下電器産業株式会社 強誘電体記憶装置及びその読み出し方法
US6649453B1 (en) * 2002-08-29 2003-11-18 Micron Technology, Inc. Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
US20040119105A1 (en) * 2002-12-18 2004-06-24 Wilson Dennis Robert Ferroelectric memory
JP3806084B2 (ja) 2002-12-25 2006-08-09 株式会社東芝 強誘電体メモリ及びそのデータ読み出し方法
JP2004221473A (ja) * 2003-01-17 2004-08-05 Renesas Technology Corp 半導体記憶装置
TWI281159B (en) * 2003-03-21 2007-05-11 Mediatek Inc Sense out circuit for single-bitline semiconductor memory device
JP4524735B2 (ja) * 2003-06-20 2010-08-18 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2005142451A (ja) * 2003-11-07 2005-06-02 Oki Electric Ind Co Ltd 半導体メモリ装置及び半導体メモリ装置の製造方法
DE102004042171A1 (de) * 2004-08-31 2006-04-20 Infineon Technologies Ag Schutzschaltung für nichtflüchtige, elektrostatisch sensitive Speicher
US7453715B2 (en) 2005-03-30 2008-11-18 Ovonyx, Inc. Reading a phase change memory
US7443708B2 (en) * 2006-03-09 2008-10-28 Texas Instruments Incorporated Low resistance plate line bus architecture
US9899073B2 (en) * 2016-06-27 2018-02-20 Micron Technology, Inc. Multi-level storage in ferroelectric memory
US10991411B2 (en) * 2018-08-17 2021-04-27 Micron Technology, Inc. Method and apparatuses for performing a voltage adjustment operation on a section of memory cells based on a quantity of access operations
KR20240028876A (ko) 2022-08-25 2024-03-05 엘지이노텍 주식회사 전력변환장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088339B2 (ja) * 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
JP3110032B2 (ja) * 1990-03-30 2000-11-20 株式会社東芝 強誘電体メモリ
KR970000870B1 (ko) * 1992-12-02 1997-01-20 마쯔시다덴기산교 가부시기가이샤 반도체메모리장치
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ
JPH07111085A (ja) * 1993-10-14 1995-04-25 Sharp Corp 不揮発性半導体記憶装置
JPH06208796A (ja) * 1993-11-01 1994-07-26 Hitachi Ltd 半導体メモリ

Also Published As

Publication number Publication date
KR0170008B1 (ko) 1999-03-30
EP0720171A2 (de) 1996-07-03
DE69517142T2 (de) 2001-02-01
US5671174A (en) 1997-09-23
KR960025730A (ko) 1996-07-20
EP0720171A3 (de) 1997-02-12
EP0720171B1 (de) 2000-05-24
JP3183076B2 (ja) 2001-07-03
JPH0982083A (ja) 1997-03-28

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