DE69419339D1 - Nichtflüchtige Speicheranordnung - Google Patents

Nichtflüchtige Speicheranordnung

Info

Publication number
DE69419339D1
DE69419339D1 DE69419339T DE69419339T DE69419339D1 DE 69419339 D1 DE69419339 D1 DE 69419339D1 DE 69419339 T DE69419339 T DE 69419339T DE 69419339 T DE69419339 T DE 69419339T DE 69419339 D1 DE69419339 D1 DE 69419339D1
Authority
DE
Germany
Prior art keywords
memory device
volatile memory
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69419339T
Other languages
English (en)
Other versions
DE69419339T2 (de
Inventor
Hideki Arakawa
Akira Tanaka
Kenshiro Arase
Masaru Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69419339D1 publication Critical patent/DE69419339D1/de
Publication of DE69419339T2 publication Critical patent/DE69419339T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE69419339T 1993-03-31 1994-03-30 Nichtflüchtige Speicheranordnung Expired - Fee Related DE69419339T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7476993 1993-03-31
JP24306993 1993-09-29
JP5297903A JPH07147095A (ja) 1993-03-31 1993-11-29 半導体不揮発性記憶装置およびデコーダ回路

Publications (2)

Publication Number Publication Date
DE69419339D1 true DE69419339D1 (de) 1999-08-12
DE69419339T2 DE69419339T2 (de) 2000-01-27

Family

ID=27301613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69419339T Expired - Fee Related DE69419339T2 (de) 1993-03-31 1994-03-30 Nichtflüchtige Speicheranordnung

Country Status (5)

Country Link
US (1) US6385088B1 (de)
EP (1) EP0618586B1 (de)
JP (1) JPH07147095A (de)
KR (1) KR940022554A (de)
DE (1) DE69419339T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5663923A (en) * 1995-04-28 1997-09-02 Intel Corporation Nonvolatile memory blocking architecture
EP0745995B1 (de) * 1995-05-05 2001-04-11 STMicroelectronics S.r.l. Anordnung von nichtflüchtigen EEPROM,insbesondere Flash-EEPROM
DE69514502T2 (de) * 1995-05-05 2000-08-03 St Microelectronics Srl Nichtflüchtige Speicheranordnung mit Sektoren, deren Grösse und Anzahl bestimmbar sind
DE19526012C2 (de) * 1995-07-17 1997-09-11 Siemens Ag Elektrisch lösch- und programmierbare nicht-flüchtige Speicherzelle
JP3173456B2 (ja) * 1998-03-19 2001-06-04 日本電気株式会社 半導体記憶装置
JP2001028427A (ja) 1999-07-14 2001-01-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2005209914A (ja) * 2004-01-23 2005-08-04 Renesas Technology Corp 不揮発性半導体記憶装置
JP4907563B2 (ja) 2008-01-16 2012-03-28 パナソニック株式会社 半導体記憶装置
JP2009272000A (ja) * 2008-05-07 2009-11-19 Toshiba Microelectronics Corp 不揮発性半導体記憶装置およびそのテスト方法
KR101469105B1 (ko) * 2008-07-24 2014-12-05 삼성전자주식회사 불 휘발성 반도체 메모리 장치 및 그것을 포함한 메모리시스템
KR20120065805A (ko) * 2010-12-13 2012-06-21 삼성전자주식회사 비휘발성 메모리 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5496333A (en) * 1978-01-17 1979-07-30 Ricoh Co Ltd Refresh system
FR2626401B1 (fr) * 1988-01-26 1990-05-18 Sgs Thomson Microelectronics Memoire eeprom a grille flottante avec transistor de selection de ligne de source
US5295096A (en) * 1988-07-11 1994-03-15 Mitsubishi Denki Kabushiki Kaisha NAND type EEPROM and operating method therefor
JP2582412B2 (ja) * 1988-09-09 1997-02-19 富士通株式会社 不揮発性半導体記憶装置
US5023837A (en) * 1989-09-05 1991-06-11 Texas Instruments Incorporated Bitline segmentation in logic arrays
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
JP2792211B2 (ja) * 1990-07-06 1998-09-03 日本電気株式会社 半導体記憶装置
US5117389A (en) * 1990-09-05 1992-05-26 Macronix International Co., Ltd. Flat-cell read-only-memory integrated circuit
JP2635810B2 (ja) * 1990-09-28 1997-07-30 株式会社東芝 半導体記憶装置
JP2624569B2 (ja) * 1990-10-22 1997-06-25 シャープ株式会社 読出し専用メモリ
US5197029A (en) * 1991-02-07 1993-03-23 Texas Instruments Incorporated Common-line connection for integrated memory array
JP3104319B2 (ja) * 1991-08-29 2000-10-30 ソニー株式会社 不揮発性記憶装置
US5327378A (en) * 1992-03-04 1994-07-05 Waferscale Integration, Inc. Easily manufacturable compact EPROM
JPH0612884A (ja) * 1992-06-30 1994-01-21 Nec Corp 連想記憶装置
JP2845414B2 (ja) * 1992-09-18 1999-01-13 シャープ株式会社 半導体読み出し専用メモリ
US5369608A (en) * 1992-10-23 1994-11-29 Samsung Electronics Co., Ltd. Apparatus for relieving standby current fail of memory device
US5319593A (en) * 1992-12-21 1994-06-07 National Semiconductor Corp. Memory array with field oxide islands eliminated and method
KR960014973B1 (ko) * 1992-12-28 1996-10-23 삼성전자 주식회사 반도체 메모리장치

Also Published As

Publication number Publication date
DE69419339T2 (de) 2000-01-27
EP0618586A1 (de) 1994-10-05
EP0618586B1 (de) 1999-07-07
KR940022554A (ko) 1994-10-21
JPH07147095A (ja) 1995-06-06
US6385088B1 (en) 2002-05-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee