DE69323378T2 - Nicht-flüchtige Halbleiterspeicheranordnung - Google Patents

Nicht-flüchtige Halbleiterspeicheranordnung

Info

Publication number
DE69323378T2
DE69323378T2 DE69323378T DE69323378T DE69323378T2 DE 69323378 T2 DE69323378 T2 DE 69323378T2 DE 69323378 T DE69323378 T DE 69323378T DE 69323378 T DE69323378 T DE 69323378T DE 69323378 T2 DE69323378 T2 DE 69323378T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69323378T
Other languages
English (en)
Other versions
DE69323378D1 (de
Inventor
Kazuo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69323378D1 publication Critical patent/DE69323378D1/de
Application granted granted Critical
Publication of DE69323378T2 publication Critical patent/DE69323378T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
DE69323378T 1992-10-01 1993-10-01 Nicht-flüchtige Halbleiterspeicheranordnung Expired - Fee Related DE69323378T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26375292A JP2819964B2 (ja) 1992-10-01 1992-10-01 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69323378D1 DE69323378D1 (de) 1999-03-18
DE69323378T2 true DE69323378T2 (de) 1999-09-30

Family

ID=17393802

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69323378T Expired - Fee Related DE69323378T2 (de) 1992-10-01 1993-10-01 Nicht-flüchtige Halbleiterspeicheranordnung

Country Status (5)

Country Link
US (1) US5408432A (de)
EP (1) EP0591869B1 (de)
JP (1) JP2819964B2 (de)
KR (1) KR960016498B1 (de)
DE (1) DE69323378T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5886927A (en) * 1996-06-11 1999-03-23 Nkk Corporation Nonvolatile memory device with verify function
JP4004306B2 (ja) * 2002-02-14 2007-11-07 富士通株式会社 書き込み動作中に読み出し動作を行う半導体不揮発性メモリ
US7385855B2 (en) * 2005-12-26 2008-06-10 Ememory Technology Inc. Nonvolatile memory device having self reprogramming function
JP2010020843A (ja) * 2008-07-10 2010-01-28 Toshiba Corp 半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58128097A (ja) * 1981-12-29 1983-07-30 Fujitsu Ltd 半導体記憶装置
JPS6124091A (ja) * 1984-07-12 1986-02-01 Nec Corp メモリ回路
JPS6417298A (en) * 1987-07-09 1989-01-20 Nec Corp Rom read-out circuit
JP2573335B2 (ja) * 1988-11-09 1997-01-22 株式会社東芝 不揮発性メモリ
DE69023556T2 (de) * 1989-06-26 1996-07-18 Nec Corp Halbleiterspeicher mit einem verbesserten Datenleseschema.
US5146427A (en) * 1989-08-30 1992-09-08 Hitachi Ltd. High speed semiconductor memory having a direct-bypass signal path

Also Published As

Publication number Publication date
DE69323378D1 (de) 1999-03-18
EP0591869B1 (de) 1999-02-03
JP2819964B2 (ja) 1998-11-05
US5408432A (en) 1995-04-18
JPH06111586A (ja) 1994-04-22
KR960016498B1 (ko) 1996-12-12
EP0591869A3 (de) 1994-10-19
EP0591869A2 (de) 1994-04-13
KR940010112A (ko) 1994-05-24

Similar Documents

Publication Publication Date Title
DE69326370D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69328517D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69325152T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69520902T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69130993T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69417712T2 (de) Nichtflüchtige Halbleiter-Speichereinrichtung
DE69322311T2 (de) Halbleiterspeicheranordnung
DE69322747D1 (de) Halbleiterspeicheranordnung
DE69230750T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69317937T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69322725T2 (de) Halbleiterspeicheranordnung
KR940011024U (ko) 반도체 메모리 장치
DE69326494D1 (de) Halbleiterspeicheranordnung
DE69427835T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69332966D1 (de) Halbleiterspeicherbauelement
DE69123814T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69406037T2 (de) Nicht-flüchtige Halbleiterspeicheranordnung
DE69324470T2 (de) Halbleiterspeicheranordnung
DE69322436T2 (de) Halbleiterspeicheranordnung
DE69218878D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69325132D1 (de) Halbleiterspeicherbauelement
DE69326108T2 (de) Halbleiterspeicheranordung
DE69321544D1 (de) Halbleiterspeicheranordnung
DE69323378T2 (de) Nicht-flüchtige Halbleiterspeicheranordnung
DE69326206T2 (de) Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee