DE69323378D1 - Nicht-flüchtige Halbleiterspeicheranordnung - Google Patents
Nicht-flüchtige HalbleiterspeicheranordnungInfo
- Publication number
- DE69323378D1 DE69323378D1 DE69323378T DE69323378T DE69323378D1 DE 69323378 D1 DE69323378 D1 DE 69323378D1 DE 69323378 T DE69323378 T DE 69323378T DE 69323378 T DE69323378 T DE 69323378T DE 69323378 D1 DE69323378 D1 DE 69323378D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- volatile semiconductor
- volatile
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26375292A JP2819964B2 (ja) | 1992-10-01 | 1992-10-01 | 不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69323378D1 true DE69323378D1 (de) | 1999-03-18 |
DE69323378T2 DE69323378T2 (de) | 1999-09-30 |
Family
ID=17393802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323378T Expired - Fee Related DE69323378T2 (de) | 1992-10-01 | 1993-10-01 | Nicht-flüchtige Halbleiterspeicheranordnung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5408432A (de) |
EP (1) | EP0591869B1 (de) |
JP (1) | JP2819964B2 (de) |
KR (1) | KR960016498B1 (de) |
DE (1) | DE69323378T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5886927A (en) * | 1996-06-11 | 1999-03-23 | Nkk Corporation | Nonvolatile memory device with verify function |
JP4004306B2 (ja) * | 2002-02-14 | 2007-11-07 | 富士通株式会社 | 書き込み動作中に読み出し動作を行う半導体不揮発性メモリ |
US7385855B2 (en) * | 2005-12-26 | 2008-06-10 | Ememory Technology Inc. | Nonvolatile memory device having self reprogramming function |
JP2010020843A (ja) * | 2008-07-10 | 2010-01-28 | Toshiba Corp | 半導体記憶装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58128097A (ja) * | 1981-12-29 | 1983-07-30 | Fujitsu Ltd | 半導体記憶装置 |
JPS6124091A (ja) * | 1984-07-12 | 1986-02-01 | Nec Corp | メモリ回路 |
JPS6417298A (en) * | 1987-07-09 | 1989-01-20 | Nec Corp | Rom read-out circuit |
JP2573335B2 (ja) * | 1988-11-09 | 1997-01-22 | 株式会社東芝 | 不揮発性メモリ |
DE69023556T2 (de) * | 1989-06-26 | 1996-07-18 | Nippon Electric Co | Halbleiterspeicher mit einem verbesserten Datenleseschema. |
US5146427A (en) * | 1989-08-30 | 1992-09-08 | Hitachi Ltd. | High speed semiconductor memory having a direct-bypass signal path |
-
1992
- 1992-10-01 JP JP26375292A patent/JP2819964B2/ja not_active Expired - Fee Related
-
1993
- 1993-10-01 DE DE69323378T patent/DE69323378T2/de not_active Expired - Fee Related
- 1993-10-01 US US08/130,452 patent/US5408432A/en not_active Expired - Fee Related
- 1993-10-01 EP EP93115916A patent/EP0591869B1/de not_active Expired - Lifetime
- 1993-10-02 KR KR1019930020305A patent/KR960016498B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0591869A3 (de) | 1994-10-19 |
DE69323378T2 (de) | 1999-09-30 |
JP2819964B2 (ja) | 1998-11-05 |
EP0591869A2 (de) | 1994-04-13 |
US5408432A (en) | 1995-04-18 |
KR960016498B1 (ko) | 1996-12-12 |
KR940010112A (ko) | 1994-05-24 |
EP0591869B1 (de) | 1999-02-03 |
JPH06111586A (ja) | 1994-04-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |