DE69427835D1 - Nichtflüchtige Halbleiterspeicheranordnung - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung

Info

Publication number
DE69427835D1
DE69427835D1 DE69427835T DE69427835T DE69427835D1 DE 69427835 D1 DE69427835 D1 DE 69427835D1 DE 69427835 T DE69427835 T DE 69427835T DE 69427835 T DE69427835 T DE 69427835T DE 69427835 D1 DE69427835 D1 DE 69427835D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69427835T
Other languages
English (en)
Other versions
DE69427835T2 (de
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69427835D1 publication Critical patent/DE69427835D1/de
Publication of DE69427835T2 publication Critical patent/DE69427835T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
DE69427835T 1993-03-31 1994-03-30 Nichtflüchtige Halbleiterspeicheranordnung Expired - Fee Related DE69427835T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9730693A JPH06290591A (ja) 1993-03-31 1993-03-31 半導体不揮発性記憶装置

Publications (2)

Publication Number Publication Date
DE69427835D1 true DE69427835D1 (de) 2001-08-30
DE69427835T2 DE69427835T2 (de) 2002-04-04

Family

ID=14188812

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69427835T Expired - Fee Related DE69427835T2 (de) 1993-03-31 1994-03-30 Nichtflüchtige Halbleiterspeicheranordnung
DE69418521T Expired - Fee Related DE69418521T2 (de) 1993-03-31 1994-03-30 Nichtflüchtige Speicheranordnung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69418521T Expired - Fee Related DE69418521T2 (de) 1993-03-31 1994-03-30 Nichtflüchtige Speicheranordnung

Country Status (5)

Country Link
US (1) US5459694A (de)
EP (2) EP0834883B1 (de)
JP (1) JPH06290591A (de)
KR (1) KR940022570A (de)
DE (2) DE69427835T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69615483T2 (de) * 1995-06-13 2002-05-29 Samsung Electronics Co Ltd Leseverstärkerschaltung einer nichtflüchtigen Halbleiterspeicheranordnung
US5729493A (en) * 1996-08-23 1998-03-17 Motorola Inc. Memory suitable for operation at low power supply voltages and sense amplifier therefor
KR100248868B1 (ko) * 1996-12-14 2000-03-15 윤종용 플래시 불휘발성 반도체 메모리 장치 및 그 장치의 동작 모드 제어 방법
KR100323554B1 (ko) 1997-05-14 2002-03-08 니시무로 타이죠 불휘발성반도체메모리장치
US6188608B1 (en) 1999-04-23 2001-02-13 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device
JP3359615B2 (ja) * 1999-04-23 2002-12-24 松下電器産業株式会社 不揮発性半導体記憶装置
JP2003157689A (ja) * 2001-11-20 2003-05-30 Hitachi Ltd 半導体装置及びデータプロセッサ
JP4278438B2 (ja) * 2003-05-27 2009-06-17 三洋電機株式会社 不揮発性半導体記憶装置及びその制御方法
JP4484577B2 (ja) * 2004-05-07 2010-06-16 株式会社ルネサステクノロジ 半導体記憶装置及びその制御方法
JP2006107546A (ja) * 2004-09-30 2006-04-20 Toshiba Corp 不揮発性半導体記憶装置及びその動作方法
JP4801986B2 (ja) * 2005-02-03 2011-10-26 株式会社東芝 半導体記憶装置
JP5483799B2 (ja) * 2006-01-06 2014-05-07 三星電子株式会社 メモリ装置及びその動作方法
JP2010079953A (ja) * 2008-09-24 2010-04-08 Toshiba Corp 半導体記憶装置
KR101461632B1 (ko) 2008-11-17 2014-11-13 삼성전자주식회사 계층적 비트 라인 구조를 가지는 반도체 메모리 장치
JP5684161B2 (ja) * 2012-01-26 2015-03-11 株式会社東芝 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4305139A (en) * 1979-12-26 1981-12-08 International Business Machines Corporation State detection for storage cells
US5022009A (en) * 1988-06-02 1991-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having reading operation of information by differential amplification
KR910004166B1 (ko) * 1988-12-27 1991-06-22 삼성전자주식회사 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치
JP2862584B2 (ja) * 1989-08-31 1999-03-03 株式会社東芝 不揮発性半導体メモリ装置
JPH04129092A (ja) * 1990-09-18 1992-04-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2719237B2 (ja) * 1990-12-20 1998-02-25 シャープ株式会社 ダイナミック型半導体記憶装置
US5291045A (en) * 1991-03-29 1994-03-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device using a differential cell in a memory cell

Also Published As

Publication number Publication date
EP0618589A2 (de) 1994-10-05
EP0618589B1 (de) 1999-05-19
EP0618589A3 (en) 1995-11-29
US5459694A (en) 1995-10-17
EP0834883A2 (de) 1998-04-08
JPH06290591A (ja) 1994-10-18
DE69418521D1 (de) 1999-06-24
DE69427835T2 (de) 2002-04-04
KR940022570A (ko) 1994-10-21
DE69418521T2 (de) 1999-11-18
EP0834883A3 (de) 1999-01-13
EP0834883B1 (de) 2001-07-25

Similar Documents

Publication Publication Date Title
DE69325152D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69326370T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69420591T2 (de) Nichtflüchtige Halbleiterspeicher
DE69520902T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69328517D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69417712T2 (de) Nichtflüchtige Halbleiter-Speichereinrichtung
DE69130993D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69722133D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69230750T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69427443D1 (de) Halbleiterspeicheranordnung
DE69432846D1 (de) Halbleiterspeichereinrichtung
DE69317937D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69321700T2 (de) Nicht-flüchtige Halbleiterspeicher
DE69427835T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69406037D1 (de) Nicht-flüchtige Halbleiterspeicheranordnung
DE69123814T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69429567D1 (de) Nichtflüchtige Halbleiteranordnung
DE69427107T2 (de) Halbleiterspeicheranordnung
DE69419339T2 (de) Nichtflüchtige Speicheranordnung
DE69429794D1 (de) Nichtflüchtige Halbleiterspeicher
DE69423996T2 (de) Halbleiterspeicheranordnung
DE69519015T2 (de) Mehrzustand-Halbleiterspeicheranordnung
DE69323378T2 (de) Nicht-flüchtige Halbleiterspeicheranordnung
DE69420195T2 (de) Halbleiterspeicheranordnung
DE69429975T2 (de) Nichtflüchtige Speicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee