DE69417712D1 - Nichtflüchtige Halbleiter-Speichereinrichtung - Google Patents

Nichtflüchtige Halbleiter-Speichereinrichtung

Info

Publication number
DE69417712D1
DE69417712D1 DE69417712T DE69417712T DE69417712D1 DE 69417712 D1 DE69417712 D1 DE 69417712D1 DE 69417712 T DE69417712 T DE 69417712T DE 69417712 T DE69417712 T DE 69417712T DE 69417712 D1 DE69417712 D1 DE 69417712D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69417712T
Other languages
English (en)
Other versions
DE69417712T2 (de
Inventor
Hiroto Nakai
Tadashi Miyakawa
Shigeru Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69417712D1 publication Critical patent/DE69417712D1/de
Application granted granted Critical
Publication of DE69417712T2 publication Critical patent/DE69417712T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G11C29/28—Dependent multiple arrays, e.g. multi-bit arrays
DE69417712T 1993-12-28 1994-12-28 Nichtflüchtige Halbleiter-Speichereinrichtung Expired - Lifetime DE69417712T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35134093A JPH07201191A (ja) 1993-12-28 1993-12-28 不揮発性半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69417712D1 true DE69417712D1 (de) 1999-05-12
DE69417712T2 DE69417712T2 (de) 1999-09-09

Family

ID=18416643

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417712T Expired - Lifetime DE69417712T2 (de) 1993-12-28 1994-12-28 Nichtflüchtige Halbleiter-Speichereinrichtung

Country Status (6)

Country Link
US (1) US5553026A (de)
EP (1) EP0662692B1 (de)
JP (1) JPH07201191A (de)
KR (1) KR950020740A (de)
CN (1) CN1046369C (de)
DE (1) DE69417712T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100566464B1 (ko) * 1995-01-31 2006-03-31 가부시끼가이샤 히다치 세이사꾸쇼 반도체 메모리 장치
JPH0973776A (ja) * 1995-09-07 1997-03-18 Mitsubishi Electric Corp 同期型半導体記憶装置
JP3603440B2 (ja) * 1996-01-12 2004-12-22 富士通株式会社 半導体記憶装置
JP3171097B2 (ja) * 1996-03-25 2001-05-28 日本電気株式会社 半導体記憶装置
JPH09288614A (ja) * 1996-04-22 1997-11-04 Mitsubishi Electric Corp 半導体集積回路装置、半導体記憶装置およびそのための制御回路
JPH1027490A (ja) * 1996-07-10 1998-01-27 Toshiba Corp 不揮発性半導体記憶装置
JP3268732B2 (ja) * 1996-10-21 2002-03-25 株式会社東芝 不揮発性半導体メモリ
JP3039400B2 (ja) * 1996-11-21 2000-05-08 日本電気株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置におけるブロック消去のテスト方法
JP3450628B2 (ja) * 1997-02-26 2003-09-29 株式会社東芝 半導体記憶装置
JP4059951B2 (ja) * 1997-04-11 2008-03-12 株式会社ルネサステクノロジ 半導体記憶装置
JP3908338B2 (ja) * 1997-06-30 2007-04-25 富士通株式会社 半導体記憶装置
JP3206737B2 (ja) * 1998-03-27 2001-09-10 日本電気株式会社 ラッチ回路
JP3854025B2 (ja) * 1998-12-25 2006-12-06 株式会社東芝 不揮発性半導体記憶装置
JP3920501B2 (ja) * 1999-04-02 2007-05-30 株式会社東芝 不揮発性半導体記憶装置及びそのデータ消去制御方法
US6288938B1 (en) * 1999-08-19 2001-09-11 Azalea Microelectronics Corporation Flash memory architecture and method of operation
US6795367B1 (en) * 2000-05-16 2004-09-21 Micron Technology, Inc. Layout technique for address signal lines in decoders including stitched blocks
JP3754600B2 (ja) * 2000-06-13 2006-03-15 シャープ株式会社 不揮発性半導体記憶装置およびそのテスト方法
JP4366001B2 (ja) * 2000-08-11 2009-11-18 株式会社アドバンテスト 半導体メモリ試験方法・半導体メモリ試験装置
US6966016B2 (en) * 2001-04-16 2005-11-15 Advanced Micro Devices, Inc. System and method for erase test of integrated circuit device having non-homogeneously sized sectors
JP4068427B2 (ja) * 2002-10-08 2008-03-26 エルピーダメモリ株式会社 データインバージョン回路及び半導体装置
JP3914869B2 (ja) * 2002-12-20 2007-05-16 スパンション インク 不揮発性メモリ及びその書き換え方法
US7906804B2 (en) * 2006-07-19 2011-03-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and manufacturing method thereof
KR100769772B1 (ko) 2006-09-29 2007-10-23 주식회사 하이닉스반도체 플래시 메모리 장치 및 이를 이용한 소거 방법
JP2008103033A (ja) * 2006-10-19 2008-05-01 Toshiba Corp 半導体記憶装置及びこれにおける電力供給方法
KR100909627B1 (ko) * 2007-10-10 2009-07-27 주식회사 하이닉스반도체 플래시 메모리소자
JP2010165457A (ja) * 2010-05-06 2010-07-29 Ricoh Co Ltd フラッシュメモリ装置
US10991433B2 (en) * 2019-09-03 2021-04-27 Silicon Storage Technology, Inc. Method of improving read current stability in analog non-volatile memory by limiting time gap between erase and program

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274596A (en) * 1987-09-16 1993-12-28 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device having simultaneous operation of adjacent blocks
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
US5031146A (en) * 1988-12-22 1991-07-09 Digital Equipment Corporation Memory apparatus for multiple processor systems
JPH03230397A (ja) * 1990-02-06 1991-10-14 Mitsubishi Electric Corp 不揮発生メモリ装置
JP2624864B2 (ja) * 1990-02-28 1997-06-25 株式会社東芝 不揮発性半導体メモリ
JP2962080B2 (ja) * 1991-12-27 1999-10-12 日本電気株式会社 ランダムアクセスメモリ
JPH05274879A (ja) * 1992-03-26 1993-10-22 Nec Corp 半導体装置

Also Published As

Publication number Publication date
KR950020740A (ko) 1995-07-24
CN1121248A (zh) 1996-04-24
EP0662692A1 (de) 1995-07-12
EP0662692B1 (de) 1999-04-07
JPH07201191A (ja) 1995-08-04
US5553026A (en) 1996-09-03
DE69417712T2 (de) 1999-09-09
CN1046369C (zh) 1999-11-10

Similar Documents

Publication Publication Date Title
DE69325152D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69326370D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69420591D1 (de) Nichtflüchtige Halbleiterspeicher
DE69520902D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69328517D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69417712D1 (de) Nichtflüchtige Halbleiter-Speichereinrichtung
DE69130993D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69032678D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69430683D1 (de) Halbleiterspeicheranordnung
DE69522412D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69722133D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69726698T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE4407210B4 (de) Halbleiterspeicherbauelementaufbau
DE69322311D1 (de) Halbleiterspeicheranordnung
DE69230750D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69432846D1 (de) Halbleiterspeichereinrichtung
DE69427443D1 (de) Halbleiterspeicheranordnung
DE69614046D1 (de) Nichtflüchtige Halbleiterspeicher
DE69322747D1 (de) Halbleiterspeicheranordnung
DE69317937D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69322725D1 (de) Halbleiterspeicheranordnung
KR910001776A (ko) 비휘발성 반도체 메모리장치
DE69432882D1 (de) Halbleiterspeicheranordnung
DE69321700D1 (de) Nicht-flüchtige Halbleiterspeicher
DE69427835D1 (de) Nichtflüchtige Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition