DE69326370D1 - Nichtflüchtige Halbleiterspeicheranordnung - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung

Info

Publication number
DE69326370D1
DE69326370D1 DE69326370T DE69326370T DE69326370D1 DE 69326370 D1 DE69326370 D1 DE 69326370D1 DE 69326370 T DE69326370 T DE 69326370T DE 69326370 T DE69326370 T DE 69326370T DE 69326370 D1 DE69326370 D1 DE 69326370D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69326370T
Other languages
English (en)
Other versions
DE69326370T2 (de
Inventor
Hiroto Nakai
Hideo Kato
Kaoru Tokushige
Masamichi Asano
Kazuhisa Kanazawa
Toshio Yamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP28119392A external-priority patent/JP2667617B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69326370D1 publication Critical patent/DE69326370D1/de
Application granted granted Critical
Publication of DE69326370T2 publication Critical patent/DE69326370T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
DE69326370T 1992-03-05 1993-03-05 Nichtflüchtige Halbleiterspeicheranordnung Expired - Fee Related DE69326370T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4833892 1992-03-05
JP28119392A JP2667617B2 (ja) 1992-03-05 1992-10-20 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69326370D1 true DE69326370D1 (de) 1999-10-21
DE69326370T2 DE69326370T2 (de) 2000-01-20

Family

ID=26388589

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69326370T Expired - Fee Related DE69326370T2 (de) 1992-03-05 1993-03-05 Nichtflüchtige Halbleiterspeicheranordnung

Country Status (3)

Country Link
US (1) US5371702A (de)
EP (1) EP0559213B1 (de)
DE (1) DE69326370T2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
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KR960000616B1 (ko) * 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
US5414664A (en) * 1993-05-28 1995-05-09 Macronix International Co., Ltd. Flash EPROM with block erase flags for over-erase protection
DE69330434T2 (de) * 1993-05-28 2002-05-02 Macronix International Co. Ltd., Hsinchu Flash-eprom mit block-löschmarkierungen für überlöschschutz.
KR970005644B1 (ko) * 1994-09-03 1997-04-18 삼성전자 주식회사 불휘발성 반도체 메모리장치의 멀티블럭 소거 및 검증장치 및 그 방법
US5517453A (en) * 1994-09-15 1996-05-14 National Semiconductor Corporation Memory with multiple erase modes
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US8171203B2 (en) 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
US6978342B1 (en) 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
KR100204810B1 (ko) * 1996-09-13 1999-06-15 윤종용 소거블럭사이즈를 가변시킬 수 있는 반도체 메모리장치
KR0185954B1 (ko) * 1996-09-30 1999-05-15 삼성전자주식회사 휴대형 단말기기의 메모리 관리방법
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
JP4172078B2 (ja) * 1998-12-28 2008-10-29 富士通株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置における消去方法
JP3920501B2 (ja) 1999-04-02 2007-05-30 株式会社東芝 不揮発性半導体記憶装置及びそのデータ消去制御方法
US7102671B1 (en) 2000-02-08 2006-09-05 Lexar Media, Inc. Enhanced compact flash memory card
US6363008B1 (en) 2000-02-17 2002-03-26 Multi Level Memory Technology Multi-bit-cell non-volatile memory with maximized data capacity
US6662263B1 (en) 2000-03-03 2003-12-09 Multi Level Memory Technology Sectorless flash memory architecture
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
US6549467B2 (en) * 2001-03-09 2003-04-15 Micron Technology, Inc. Non-volatile memory device with erase address register
GB0123421D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Power management system
GB0123419D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Data handling system
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
GB0123415D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Method of writing data to non-volatile memory
GB0123417D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Improved data processing
GB0123410D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
US6957295B1 (en) 2002-01-18 2005-10-18 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US6950918B1 (en) 2002-01-18 2005-09-27 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US7231643B1 (en) 2002-02-22 2007-06-12 Lexar Media, Inc. Image rescue system including direct communication between an application program and a device driver
US7123537B2 (en) * 2002-03-15 2006-10-17 Macronix International Co., Ltd. Decoder arrangement of a memory cell array
US7003621B2 (en) * 2003-03-25 2006-02-21 M-System Flash Disk Pioneers Ltd. Methods of sanitizing a flash-based data storage device
US6973519B1 (en) 2003-06-03 2005-12-06 Lexar Media, Inc. Card identification compatibility
CN1809833B (zh) 2003-12-17 2015-08-05 雷克萨媒体公司 用于减少用于购买的电子设备的盗窃发生率的方法
US7509452B2 (en) 2004-01-19 2009-03-24 Ricoh Company, Ltd. Image forming apparatus, erasing method, and hard disk management method
US7725628B1 (en) 2004-04-20 2010-05-25 Lexar Media, Inc. Direct secondary device interface by a host
US7370166B1 (en) 2004-04-30 2008-05-06 Lexar Media, Inc. Secure portable storage device
US7110301B2 (en) * 2004-05-07 2006-09-19 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory device and multi-block erase method thereof
US7464306B1 (en) 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
US7594063B1 (en) 2004-08-27 2009-09-22 Lexar Media, Inc. Storage capacity status
KR100769771B1 (ko) * 2006-09-29 2007-10-23 주식회사 하이닉스반도체 플래시 메모리 장치 및 그 소거 방법
JP5159127B2 (ja) * 2007-03-14 2013-03-06 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR20090014823A (ko) * 2007-08-07 2009-02-11 삼성전자주식회사 배드 블록을 리맵핑하는 플래시 메모리 장치 및 그것의배드 블록의 리맵핑 방법
JP4746699B1 (ja) * 2010-01-29 2011-08-10 株式会社東芝 半導体記憶装置及びその制御方法
US9286160B2 (en) 2014-02-07 2016-03-15 Stmicroelectronics S.R.L. System and method for phase change memory with erase flag cells

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5050125A (en) * 1987-11-18 1991-09-17 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cellstructure
JPH01298600A (ja) * 1988-05-26 1989-12-01 Toshiba Corp 半導体記憶装置
DE69033438T2 (de) * 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JP2862584B2 (ja) * 1989-08-31 1999-03-03 株式会社東芝 不揮発性半導体メモリ装置
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
JPH043394A (ja) * 1990-04-20 1992-01-08 Citizen Watch Co Ltd 半導体不揮発性記憶装置
JP2601951B2 (ja) * 1991-01-11 1997-04-23 株式会社東芝 半導体集積回路

Also Published As

Publication number Publication date
EP0559213A3 (de) 1995-05-24
EP0559213A2 (de) 1993-09-08
DE69326370T2 (de) 2000-01-20
US5371702A (en) 1994-12-06
EP0559213B1 (de) 1999-09-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee