DE69330434T2 - Flash-eprom mit block-löschmarkierungen für überlöschschutz. - Google Patents
Flash-eprom mit block-löschmarkierungen für überlöschschutz.Info
- Publication number
- DE69330434T2 DE69330434T2 DE69330434T DE69330434T DE69330434T2 DE 69330434 T2 DE69330434 T2 DE 69330434T2 DE 69330434 T DE69330434 T DE 69330434T DE 69330434 T DE69330434 T DE 69330434T DE 69330434 T2 DE69330434 T2 DE 69330434T2
- Authority
- DE
- Germany
- Prior art keywords
- markings
- over
- flash eprom
- block delete
- erase protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1993/005146 WO1994028551A1 (en) | 1993-05-28 | 1993-05-28 | Flash eprom with block erase flags for over-erase protection |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69330434D1 DE69330434D1 (de) | 2001-08-16 |
DE69330434T2 true DE69330434T2 (de) | 2002-05-02 |
Family
ID=22236648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69330434T Expired - Lifetime DE69330434T2 (de) | 1993-05-28 | 1993-05-28 | Flash-eprom mit block-löschmarkierungen für überlöschschutz. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0700570B1 (de) |
JP (1) | JPH09502824A (de) |
DE (1) | DE69330434T2 (de) |
WO (1) | WO1994028551A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125081A (ja) * | 1996-10-21 | 1998-05-15 | Toshiba Corp | 不揮発性半導体メモリ |
JP2002170389A (ja) * | 2000-06-30 | 2002-06-14 | Toshiba Corp | 不揮発性半導体記憶装置とその動作方法 |
US7123537B2 (en) | 2002-03-15 | 2006-10-17 | Macronix International Co., Ltd. | Decoder arrangement of a memory cell array |
US7151692B2 (en) | 2004-01-27 | 2006-12-19 | Macronix International Co., Ltd. | Operation scheme for programming charge trapping non-volatile memory |
US7075828B2 (en) | 2004-04-26 | 2006-07-11 | Macronix International Co., Intl. | Operation scheme with charge balancing erase for charge trapping non-volatile memory |
US7133313B2 (en) | 2004-04-26 | 2006-11-07 | Macronix International Co., Ltd. | Operation scheme with charge balancing for charge trapping non-volatile memory |
US7187590B2 (en) | 2004-04-26 | 2007-03-06 | Macronix International Co., Ltd. | Method and system for self-convergent erase in charge trapping memory cells |
US7209390B2 (en) | 2004-04-26 | 2007-04-24 | Macronix International Co., Ltd. | Operation scheme for spectrum shift in charge trapping non-volatile memory |
US7164603B2 (en) | 2004-04-26 | 2007-01-16 | Yen-Hao Shih | Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory |
US7190614B2 (en) | 2004-06-17 | 2007-03-13 | Macronix International Co., Ltd. | Operation scheme for programming charge trapping non-volatile memory |
US7106625B2 (en) | 2004-07-06 | 2006-09-12 | Macronix International Co, Td | Charge trapping non-volatile memory with two trapping locations per gate, and method for operating same |
US7133317B2 (en) | 2004-11-19 | 2006-11-07 | Macronix International Co., Ltd. | Method and apparatus for programming nonvolatile memory |
US20060113586A1 (en) | 2004-11-29 | 2006-06-01 | Macronix International Co., Ltd. | Charge trapping dielectric structure for non-volatile memory |
US8482052B2 (en) | 2005-01-03 | 2013-07-09 | Macronix International Co., Ltd. | Silicon on insulator and thin film transistor bandgap engineered split gate memory |
US7315474B2 (en) | 2005-01-03 | 2008-01-01 | Macronix International Co., Ltd | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US7158420B2 (en) | 2005-04-29 | 2007-01-02 | Macronix International Co., Ltd. | Inversion bit line, charge trapping non-volatile memory and method of operating same |
US7763927B2 (en) | 2005-12-15 | 2010-07-27 | Macronix International Co., Ltd. | Non-volatile memory device having a nitride-oxide dielectric layer |
US7668017B2 (en) * | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US7242622B2 (en) | 2005-12-06 | 2007-07-10 | Macronix International Co., Ltd. | Methods to resolve hard-to-erase condition in charge trapping non-volatile memory |
JP2006309943A (ja) * | 2006-08-21 | 2006-11-09 | Ricoh Co Ltd | 複合化フラッシュメモリ装置 |
US7811890B2 (en) | 2006-10-11 | 2010-10-12 | Macronix International Co., Ltd. | Vertical channel transistor structure and manufacturing method thereof |
US8223540B2 (en) | 2007-02-02 | 2012-07-17 | Macronix International Co., Ltd. | Method and apparatus for double-sided biasing of nonvolatile memory |
JP2007157331A (ja) * | 2007-03-16 | 2007-06-21 | Ricoh Co Ltd | 複合化フラッシュメモリ及びそれを搭載した携帯用機器 |
US7737488B2 (en) | 2007-08-09 | 2010-06-15 | Macronix International Co., Ltd. | Blocking dielectric engineered charge trapping memory cell with high speed erase |
US9240405B2 (en) | 2011-04-19 | 2016-01-19 | Macronix International Co., Ltd. | Memory with off-chip controller |
US9286160B2 (en) | 2014-02-07 | 2016-03-15 | Stmicroelectronics S.R.L. | System and method for phase change memory with erase flag cells |
US10580505B1 (en) * | 2019-02-21 | 2020-03-03 | Elite Semiconductor Memory Technology Inc. | Erasing method used in flash memory |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2654596B2 (ja) * | 1989-02-06 | 1997-09-17 | 株式会社日立製作所 | 不揮発性記憶装置 |
EP0618535B1 (de) * | 1989-04-13 | 1999-08-25 | SanDisk Corporation | EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher |
JPH088313B2 (ja) * | 1989-07-25 | 1996-01-29 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US5065364A (en) * | 1989-09-15 | 1991-11-12 | Intel Corporation | Apparatus for providing block erasing in a flash EPROM |
JP2624864B2 (ja) * | 1990-02-28 | 1997-06-25 | 株式会社東芝 | 不揮発性半導体メモリ |
JP2709751B2 (ja) * | 1990-06-15 | 1998-02-04 | 三菱電機株式会社 | 不揮発性半導体記憶装置およびそのデータ消去方法 |
US5212663A (en) * | 1991-02-21 | 1993-05-18 | Cypress Semiconductor Corporation | Method to implement a large resettable static RAM without the large surge current |
US5197034A (en) * | 1991-05-10 | 1993-03-23 | Intel Corporation | Floating gate non-volatile memory with deep power down and write lock-out |
JP3080744B2 (ja) * | 1991-12-27 | 2000-08-28 | 日本電気株式会社 | 電気的に書き込み一括消去可能な不揮発性半導体記憶装置 |
EP0559213B1 (de) * | 1992-03-05 | 1999-09-15 | Kabushiki Kaisha Toshiba | Nichtflüchtige Halbleiterspeicheranordnung |
-
1993
- 1993-05-28 DE DE69330434T patent/DE69330434T2/de not_active Expired - Lifetime
- 1993-05-28 JP JP7500575A patent/JPH09502824A/ja active Pending
- 1993-05-28 EP EP93914263A patent/EP0700570B1/de not_active Expired - Lifetime
- 1993-05-28 WO PCT/US1993/005146 patent/WO1994028551A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0700570A4 (de) | 1998-04-08 |
EP0700570A1 (de) | 1996-03-13 |
WO1994028551A1 (en) | 1994-12-08 |
JPH09502824A (ja) | 1997-03-18 |
DE69330434D1 (de) | 2001-08-16 |
EP0700570B1 (de) | 2001-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |