DE69330434T2 - Flash-eprom mit block-löschmarkierungen für überlöschschutz. - Google Patents

Flash-eprom mit block-löschmarkierungen für überlöschschutz.

Info

Publication number
DE69330434T2
DE69330434T2 DE69330434T DE69330434T DE69330434T2 DE 69330434 T2 DE69330434 T2 DE 69330434T2 DE 69330434 T DE69330434 T DE 69330434T DE 69330434 T DE69330434 T DE 69330434T DE 69330434 T2 DE69330434 T2 DE 69330434T2
Authority
DE
Germany
Prior art keywords
markings
over
flash eprom
block delete
erase protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69330434T
Other languages
English (en)
Other versions
DE69330434D1 (de
Inventor
Tien-Ler Lin
L Wan
Ling-Wen Hsiao
Gilbert Sung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
Original Assignee
Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Publication of DE69330434D1 publication Critical patent/DE69330434D1/de
Application granted granted Critical
Publication of DE69330434T2 publication Critical patent/DE69330434T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
DE69330434T 1993-05-28 1993-05-28 Flash-eprom mit block-löschmarkierungen für überlöschschutz. Expired - Lifetime DE69330434T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1993/005146 WO1994028551A1 (en) 1993-05-28 1993-05-28 Flash eprom with block erase flags for over-erase protection

Publications (2)

Publication Number Publication Date
DE69330434D1 DE69330434D1 (de) 2001-08-16
DE69330434T2 true DE69330434T2 (de) 2002-05-02

Family

ID=22236648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330434T Expired - Lifetime DE69330434T2 (de) 1993-05-28 1993-05-28 Flash-eprom mit block-löschmarkierungen für überlöschschutz.

Country Status (4)

Country Link
EP (1) EP0700570B1 (de)
JP (1) JPH09502824A (de)
DE (1) DE69330434T2 (de)
WO (1) WO1994028551A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125081A (ja) * 1996-10-21 1998-05-15 Toshiba Corp 不揮発性半導体メモリ
JP2002170389A (ja) * 2000-06-30 2002-06-14 Toshiba Corp 不揮発性半導体記憶装置とその動作方法
US7123537B2 (en) 2002-03-15 2006-10-17 Macronix International Co., Ltd. Decoder arrangement of a memory cell array
US7151692B2 (en) 2004-01-27 2006-12-19 Macronix International Co., Ltd. Operation scheme for programming charge trapping non-volatile memory
US7075828B2 (en) 2004-04-26 2006-07-11 Macronix International Co., Intl. Operation scheme with charge balancing erase for charge trapping non-volatile memory
US7133313B2 (en) 2004-04-26 2006-11-07 Macronix International Co., Ltd. Operation scheme with charge balancing for charge trapping non-volatile memory
US7187590B2 (en) 2004-04-26 2007-03-06 Macronix International Co., Ltd. Method and system for self-convergent erase in charge trapping memory cells
US7209390B2 (en) 2004-04-26 2007-04-24 Macronix International Co., Ltd. Operation scheme for spectrum shift in charge trapping non-volatile memory
US7164603B2 (en) 2004-04-26 2007-01-16 Yen-Hao Shih Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory
US7190614B2 (en) 2004-06-17 2007-03-13 Macronix International Co., Ltd. Operation scheme for programming charge trapping non-volatile memory
US7106625B2 (en) 2004-07-06 2006-09-12 Macronix International Co, Td Charge trapping non-volatile memory with two trapping locations per gate, and method for operating same
US7133317B2 (en) 2004-11-19 2006-11-07 Macronix International Co., Ltd. Method and apparatus for programming nonvolatile memory
US20060113586A1 (en) 2004-11-29 2006-06-01 Macronix International Co., Ltd. Charge trapping dielectric structure for non-volatile memory
US8482052B2 (en) 2005-01-03 2013-07-09 Macronix International Co., Ltd. Silicon on insulator and thin film transistor bandgap engineered split gate memory
US7315474B2 (en) 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US7158420B2 (en) 2005-04-29 2007-01-02 Macronix International Co., Ltd. Inversion bit line, charge trapping non-volatile memory and method of operating same
US7763927B2 (en) 2005-12-15 2010-07-27 Macronix International Co., Ltd. Non-volatile memory device having a nitride-oxide dielectric layer
US7668017B2 (en) * 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7242622B2 (en) 2005-12-06 2007-07-10 Macronix International Co., Ltd. Methods to resolve hard-to-erase condition in charge trapping non-volatile memory
JP2006309943A (ja) * 2006-08-21 2006-11-09 Ricoh Co Ltd 複合化フラッシュメモリ装置
US7811890B2 (en) 2006-10-11 2010-10-12 Macronix International Co., Ltd. Vertical channel transistor structure and manufacturing method thereof
US8223540B2 (en) 2007-02-02 2012-07-17 Macronix International Co., Ltd. Method and apparatus for double-sided biasing of nonvolatile memory
JP2007157331A (ja) * 2007-03-16 2007-06-21 Ricoh Co Ltd 複合化フラッシュメモリ及びそれを搭載した携帯用機器
US7737488B2 (en) 2007-08-09 2010-06-15 Macronix International Co., Ltd. Blocking dielectric engineered charge trapping memory cell with high speed erase
US9240405B2 (en) 2011-04-19 2016-01-19 Macronix International Co., Ltd. Memory with off-chip controller
US9286160B2 (en) 2014-02-07 2016-03-15 Stmicroelectronics S.R.L. System and method for phase change memory with erase flag cells
US10580505B1 (en) * 2019-02-21 2020-03-03 Elite Semiconductor Memory Technology Inc. Erasing method used in flash memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2654596B2 (ja) * 1989-02-06 1997-09-17 株式会社日立製作所 不揮発性記憶装置
EP0618535B1 (de) * 1989-04-13 1999-08-25 SanDisk Corporation EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher
JPH088313B2 (ja) * 1989-07-25 1996-01-29 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
JP2624864B2 (ja) * 1990-02-28 1997-06-25 株式会社東芝 不揮発性半導体メモリ
JP2709751B2 (ja) * 1990-06-15 1998-02-04 三菱電機株式会社 不揮発性半導体記憶装置およびそのデータ消去方法
US5212663A (en) * 1991-02-21 1993-05-18 Cypress Semiconductor Corporation Method to implement a large resettable static RAM without the large surge current
US5197034A (en) * 1991-05-10 1993-03-23 Intel Corporation Floating gate non-volatile memory with deep power down and write lock-out
JP3080744B2 (ja) * 1991-12-27 2000-08-28 日本電気株式会社 電気的に書き込み一括消去可能な不揮発性半導体記憶装置
EP0559213B1 (de) * 1992-03-05 1999-09-15 Kabushiki Kaisha Toshiba Nichtflüchtige Halbleiterspeicheranordnung

Also Published As

Publication number Publication date
EP0700570A4 (de) 1998-04-08
EP0700570A1 (de) 1996-03-13
WO1994028551A1 (en) 1994-12-08
JPH09502824A (ja) 1997-03-18
DE69330434D1 (de) 2001-08-16
EP0700570B1 (de) 2001-07-11

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Legal Events

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8364 No opposition during term of opposition