DE69524572T2 - Leseverstärkerschaltung für Halbleiterspeicheranordnungen - Google Patents

Leseverstärkerschaltung für Halbleiterspeicheranordnungen

Info

Publication number
DE69524572T2
DE69524572T2 DE69524572T DE69524572T DE69524572T2 DE 69524572 T2 DE69524572 T2 DE 69524572T2 DE 69524572 T DE69524572 T DE 69524572T DE 69524572 T DE69524572 T DE 69524572T DE 69524572 T2 DE69524572 T2 DE 69524572T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory devices
amplifier circuit
sense amplifier
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69524572T
Other languages
English (en)
Other versions
DE69524572D1 (de
Inventor
Giovanni Campardo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69524572D1 publication Critical patent/DE69524572D1/de
Publication of DE69524572T2 publication Critical patent/DE69524572T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
DE69524572T 1995-04-28 1995-04-28 Leseverstärkerschaltung für Halbleiterspeicheranordnungen Expired - Fee Related DE69524572T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830166A EP0740307B1 (de) 1995-04-28 1995-04-28 Leseverstärkerschaltung für Halbleiterspeicheranordnungen

Publications (2)

Publication Number Publication Date
DE69524572D1 DE69524572D1 (de) 2002-01-24
DE69524572T2 true DE69524572T2 (de) 2002-08-22

Family

ID=8221905

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524572T Expired - Fee Related DE69524572T2 (de) 1995-04-28 1995-04-28 Leseverstärkerschaltung für Halbleiterspeicheranordnungen

Country Status (4)

Country Link
US (2) US5729492A (de)
EP (1) EP0740307B1 (de)
JP (1) JP3091687B2 (de)
DE (1) DE69524572T2 (de)

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US6967896B2 (en) 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
IL161648A0 (en) * 2003-04-29 2004-09-27 Saifun Semiconductors Ltd Apparatus and methods for multi-level sensing in a memory array
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
TWI247311B (en) * 2004-03-25 2006-01-11 Elite Semiconductor Esmt Circuit and method for preventing nonvolatile memory from over erasure
WO2005094178A2 (en) 2004-04-01 2005-10-13 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US7755938B2 (en) 2004-04-19 2010-07-13 Saifun Semiconductors Ltd. Method for reading a memory array with neighbor effect cancellation
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7161861B2 (en) * 2004-11-15 2007-01-09 Infineon Technologies Ag Sense amplifier bitline boost circuit
US7257025B2 (en) 2004-12-09 2007-08-14 Saifun Semiconductors Ltd Method for reading non-volatile memory cells
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
JP4684719B2 (ja) * 2005-04-07 2011-05-18 パナソニック株式会社 半導体記憶装置
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
EP1746645A3 (de) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Speicherzellenanordnung mit sub-minimalem Wortleitungsabstand und Verfahren zu deren Herstellung
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7405988B2 (en) 2005-09-26 2008-07-29 Silicon Storage Technology, Inc. Method and apparatus for systematic and random variation and mismatch compensation for multilevel flash memory operation
KR100748556B1 (ko) 2005-11-23 2007-08-10 삼성전자주식회사 강유전체 메모리 장치 및 그것의 구동방법
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7898885B2 (en) * 2007-07-19 2011-03-01 Micron Technology, Inc. Analog sensing of memory cells in a solid state memory device
JP2009129472A (ja) * 2007-11-20 2009-06-11 Toshiba Corp 半導体記憶装置
US7710782B2 (en) * 2008-05-05 2010-05-04 Macronix International Co., Ltd. Sense amplifier and data sensing method thereof
US20090296506A1 (en) * 2008-05-28 2009-12-03 Macronix International Co., Ltd. Sense amplifier and data sensing method thereof
CN101609710B (zh) * 2008-06-17 2011-07-27 旺宏电子股份有限公司 感测放大器电路及其数据感测方法
CN101800082B (zh) * 2009-02-11 2012-12-05 北京兆易创新科技有限公司 一种用于mlc闪存的灵敏放大器和电流电压转换电路
US8295112B2 (en) 2009-03-31 2012-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Sense amplifiers and exemplary applications
JP5679801B2 (ja) * 2010-12-22 2015-03-04 ラピスセミコンダクタ株式会社 不揮発性記憶装置
US8537606B2 (en) 2011-01-21 2013-09-17 Qualcomm Incorporated Read sensing circuit and method with equalization timing
US8605521B2 (en) 2011-05-12 2013-12-10 Micron Technology, Inc. Sense amplifiers, memories, and apparatuses and methods for sensing a data state of a memory cell
US8493806B1 (en) 2012-01-03 2013-07-23 United Microelectronics Corporation Sense-amplifier circuit of memory and calibrating method thereof
US9355734B2 (en) * 2014-03-04 2016-05-31 Silicon Storage Technology, Inc. Sensing circuits for use in low power nanometer flash memory devices
US10305387B2 (en) 2014-07-30 2019-05-28 Abb Schweiz Ag Systems and methods for single active bridge converters
US9384791B1 (en) 2014-12-30 2016-07-05 Altera Corporation Apparatus and method for sense amplifier offset cancellation
ITUB20155867A1 (it) * 2015-11-24 2017-05-24 St Microelectronics Srl Circuito amplificatore di lettura con compensazione dell'offset per un dispositivo di memoria non volatile
US9672941B1 (en) * 2016-02-08 2017-06-06 Infineon Technologies Ag Memory element status detection
ITUA20161478A1 (it) * 2016-03-09 2017-09-09 St Microelectronics Srl Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile
US9911501B2 (en) * 2016-05-24 2018-03-06 Silicon Storage Technology, Inc. Sensing amplifier comprising a built-in sensing offset for flash memory devices
US10074493B2 (en) * 2016-11-21 2018-09-11 Aeroflex Colorado Springs Inc. Radiation-hardened break before make circuit
US10199112B1 (en) * 2017-08-25 2019-02-05 Silicon Storage Technology, Inc. Sense amplifier circuit for reading data in a flash memory cell
JP2019057348A (ja) * 2017-09-21 2019-04-11 東芝メモリ株式会社 メモリデバイス
US10546638B2 (en) * 2017-09-28 2020-01-28 Taiwan Semiconductor Manufacturing Co., Ltd. Resistive random access memory device
US10643677B2 (en) 2018-06-26 2020-05-05 Sandisk Technologies Llc Negative kick on bit line control transistors for faster bit line settling during sensing
US10643713B1 (en) 2019-02-08 2020-05-05 Sandisk Technologies Llc Toggling power supply for faster bit line settling during sensing
US11380371B2 (en) * 2020-11-13 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Sense amplifier and operating method for non-volatile memory with reduced need on adjusting offset to compensate the mismatch

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JPS603709B2 (ja) * 1980-02-05 1985-01-30 株式会社東芝 半導体記憶装置
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JPS62252594A (ja) * 1986-04-24 1987-11-04 Sony Corp 差動型センスアンプ
JPS6346691A (ja) * 1986-08-14 1988-02-27 Toshiba Corp ダイナミツク型半導体記憶装置
JP2680939B2 (ja) * 1991-03-27 1997-11-19 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
JPH0574181A (ja) * 1991-09-10 1993-03-26 Nec Corp 半導体メモリ装置のデータ読み出し回路
JPH06176585A (ja) * 1992-12-07 1994-06-24 Fujitsu Ltd 半導体記憶装置
JPH06346691A (ja) * 1993-06-03 1994-12-20 Mitsui Constr Co Ltd トンネル覆工の構築方法
EP0740307B1 (de) * 1995-04-28 2001-12-12 STMicroelectronics S.r.l. Leseverstärkerschaltung für Halbleiterspeicheranordnungen

Also Published As

Publication number Publication date
US5729492A (en) 1998-03-17
EP0740307A1 (de) 1996-10-30
DE69524572D1 (de) 2002-01-24
US5982666A (en) 1999-11-09
JPH08321190A (ja) 1996-12-03
JP3091687B2 (ja) 2000-09-25
EP0740307B1 (de) 2001-12-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee