DE69621294D1 - Halbleiterspeicheranordnungen - Google Patents
HalbleiterspeicheranordnungenInfo
- Publication number
- DE69621294D1 DE69621294D1 DE69621294T DE69621294T DE69621294D1 DE 69621294 D1 DE69621294 D1 DE 69621294D1 DE 69621294 T DE69621294 T DE 69621294T DE 69621294 T DE69621294 T DE 69621294T DE 69621294 D1 DE69621294 D1 DE 69621294D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- memory devices
- devices
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19735295 | 1995-08-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69621294D1 true DE69621294D1 (de) | 2002-06-27 |
DE69621294T2 DE69621294T2 (de) | 2003-01-09 |
Family
ID=16373063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69621294T Expired - Lifetime DE69621294T2 (de) | 1995-08-02 | 1996-08-01 | Halbleiterspeicheranordnungen |
Country Status (5)
Country | Link |
---|---|
US (2) | US5831904A (de) |
EP (1) | EP0757359B1 (de) |
KR (1) | KR100242099B1 (de) |
DE (1) | DE69621294T2 (de) |
SG (1) | SG72699A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6272046B1 (en) * | 2000-05-02 | 2001-08-07 | Advanced Micro Devices, Inc. | Individual source line to decrease column leakage |
US6426898B1 (en) * | 2001-03-05 | 2002-07-30 | Micron Technology, Inc. | Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells |
US6967872B2 (en) * | 2001-12-18 | 2005-11-22 | Sandisk Corporation | Method and system for programming and inhibiting multi-level, non-volatile memory cells |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63153797A (ja) * | 1986-12-17 | 1988-06-27 | Fujitsu Ltd | 書込み可能なリ−ドオンリメモリ |
US5233562A (en) * | 1991-12-30 | 1993-08-03 | Intel Corporation | Methods of repairing field-effect memory cells in an electrically erasable and electrically programmable memory device |
US5388069A (en) * | 1992-03-19 | 1995-02-07 | Fujitsu Limited | Nonvolatile semiconductor memory device for preventing erroneous operation caused by over-erase phenomenon |
JPH06162787A (ja) * | 1992-11-17 | 1994-06-10 | Matsushita Electric Ind Co Ltd | 電気的一括消去機能を有する不揮発性メモリの読み出し方法 |
JPH06349288A (ja) * | 1993-06-02 | 1994-12-22 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
US5422846A (en) * | 1994-04-04 | 1995-06-06 | Motorola Inc. | Nonvolatile memory having overerase protection |
US5576991A (en) * | 1994-07-01 | 1996-11-19 | Advanced Micro Devices, Inc. | Multistepped threshold convergence for a flash memory array |
JP3238574B2 (ja) * | 1994-07-28 | 2001-12-17 | 株式会社東芝 | 不揮発性半導体記憶装置とその消去方法 |
US5546340A (en) * | 1995-06-13 | 1996-08-13 | Advanced Micro Devices, Inc. | Non-volatile memory array with over-erase correction |
US5608672A (en) * | 1995-09-26 | 1997-03-04 | Advanced Micro Devices, Inc. | Correction method leading to a uniform threshold voltage distribution for a flash eprom |
-
1996
- 1996-08-01 US US08/690,790 patent/US5831904A/en not_active Expired - Lifetime
- 1996-08-01 EP EP96112462A patent/EP0757359B1/de not_active Expired - Lifetime
- 1996-08-01 DE DE69621294T patent/DE69621294T2/de not_active Expired - Lifetime
- 1996-08-02 SG SG1996010413A patent/SG72699A1/en unknown
- 1996-08-02 KR KR1019960032378A patent/KR100242099B1/ko not_active IP Right Cessation
-
1997
- 1997-07-03 US US08/888,307 patent/US5920509A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0757359A2 (de) | 1997-02-05 |
SG72699A1 (en) | 2000-05-23 |
EP0757359B1 (de) | 2002-05-22 |
KR970012767A (ko) | 1997-03-29 |
DE69621294T2 (de) | 2003-01-09 |
US5920509A (en) | 1999-07-06 |
US5831904A (en) | 1998-11-03 |
KR100242099B1 (ko) | 2000-03-02 |
EP0757359A3 (de) | 1998-10-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |