FR2760888B1 - Circuit de lecture pour memoire adapte a la mesure des courants de fuite - Google Patents

Circuit de lecture pour memoire adapte a la mesure des courants de fuite

Info

Publication number
FR2760888B1
FR2760888B1 FR9703219A FR9703219A FR2760888B1 FR 2760888 B1 FR2760888 B1 FR 2760888B1 FR 9703219 A FR9703219 A FR 9703219A FR 9703219 A FR9703219 A FR 9703219A FR 2760888 B1 FR2760888 B1 FR 2760888B1
Authority
FR
France
Prior art keywords
reading circuit
leakage currents
memory suitable
measuring leakage
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9703219A
Other languages
English (en)
Other versions
FR2760888A1 (fr
Inventor
Jean Marie Gaultier
Emilio Miguel Yero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR9703219A priority Critical patent/FR2760888B1/fr
Priority to US09/031,748 priority patent/US5889702A/en
Publication of FR2760888A1 publication Critical patent/FR2760888A1/fr
Application granted granted Critical
Publication of FR2760888B1 publication Critical patent/FR2760888B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current
FR9703219A 1997-03-11 1997-03-11 Circuit de lecture pour memoire adapte a la mesure des courants de fuite Expired - Fee Related FR2760888B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9703219A FR2760888B1 (fr) 1997-03-11 1997-03-11 Circuit de lecture pour memoire adapte a la mesure des courants de fuite
US09/031,748 US5889702A (en) 1997-03-11 1998-02-27 Read circuit for memory adapted to the measurement of leakage currents

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9703219A FR2760888B1 (fr) 1997-03-11 1997-03-11 Circuit de lecture pour memoire adapte a la mesure des courants de fuite

Publications (2)

Publication Number Publication Date
FR2760888A1 FR2760888A1 (fr) 1998-09-18
FR2760888B1 true FR2760888B1 (fr) 1999-05-07

Family

ID=9504869

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9703219A Expired - Fee Related FR2760888B1 (fr) 1997-03-11 1997-03-11 Circuit de lecture pour memoire adapte a la mesure des courants de fuite

Country Status (2)

Country Link
US (1) US5889702A (fr)
FR (1) FR2760888B1 (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69827109D1 (de) * 1998-02-13 2004-11-25 St Microelectronics Srl Abfühlverstärker für nichtflüchtigen Speicher mit niedriger Spannung
FR2778012B1 (fr) * 1998-04-28 2001-09-28 Sgs Thomson Microelectronics Dispositif et procede de lecture de cellules de memoire eeprom
WO2000070359A1 (fr) * 1999-05-14 2000-11-23 Infineon Technologies Ag Circuit integre et procede permettant de determiner la productivite de courant d'une partie du circuit integre
JP3596808B2 (ja) * 2000-08-10 2004-12-02 沖電気工業株式会社 不揮発性半導体記憶装置
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
DE10113239C1 (de) * 2001-03-19 2002-08-22 Infineon Technologies Ag Bewerterschaltung zum Auslesen einer in einer Speicherzelle gespeicherten Information
US6567330B2 (en) * 2001-08-17 2003-05-20 Kabushiki Kaisha Toshiba Semiconductor memory device
US6538940B1 (en) * 2002-09-26 2003-03-25 Motorola, Inc. Method and circuitry for identifying weak bits in an MRAM
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
DE10327284B4 (de) * 2003-06-17 2005-11-03 Infineon Technologies Ag Prüflesevorrichtung für Speicher
KR100517561B1 (ko) * 2003-08-19 2005-09-28 삼성전자주식회사 불 휘발성 반도체 메모리 장치
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
DE102004055466B4 (de) * 2004-11-17 2006-09-21 Infineon Technologies Ag Einrichtung und Verfahren zum Messen von Speicherzell-Strömen
CN100362902C (zh) * 2004-11-18 2008-01-16 华为技术有限公司 一种实现过载拥塞控制的方法
ITTO20070109A1 (it) * 2007-02-14 2008-08-15 St Microelectronics Srl Circuito e metodo di lettura per un dispositivo di memoria non volatile basati sulla generazione adattativa di una grandezza elettrica di riferimento
US8068367B2 (en) * 2007-06-15 2011-11-29 Micron Technology, Inc. Reference current sources
TWI334604B (en) * 2007-06-25 2010-12-11 Ind Tech Res Inst Sensing circuits of phase change memory
JP5127439B2 (ja) * 2007-12-28 2013-01-23 株式会社東芝 半導体記憶装置
JP5331031B2 (ja) * 2010-02-25 2013-10-30 ラピスセミコンダクタ株式会社 電流検出回路
US8971091B2 (en) * 2010-11-19 2015-03-03 Hewlett-Packard Development Company, L.P. Method and circuit for switching a memristive device in an array
US8537625B2 (en) * 2011-03-10 2013-09-17 Freescale Semiconductor, Inc. Memory voltage regulator with leakage current voltage control
US9312002B2 (en) 2014-04-04 2016-04-12 Sandisk Technologies Inc. Methods for programming ReRAM devices
US10181358B2 (en) 2016-10-26 2019-01-15 Mediatek Inc. Sense amplifier
CN111435154B (zh) * 2018-12-25 2022-08-09 北京兆易创新科技股份有限公司 漏电检测电路、闪存存储器漏电检测装置和漏电检测方法
CN113257322B (zh) * 2021-06-21 2021-10-08 上海亿存芯半导体有限公司 读取电路及非易失性存储器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1244293B (it) * 1990-07-06 1994-07-08 Sgs Thomson Microelectronics Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini
FR2665792B1 (fr) * 1990-08-08 1993-06-11 Sgs Thomson Microelectronics Memoire integree pourvue de moyens de test ameliores.
FR2690751B1 (fr) * 1992-04-30 1994-06-17 Sgs Thomson Microelectronics Procede et circuit de detection de fuites de courant dans une ligne de bit.
FR2694119B1 (fr) * 1992-07-24 1994-08-26 Sgs Thomson Microelectronics Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture.
JP3164663B2 (ja) * 1992-09-25 2001-05-08 オリンパス光学工業株式会社 光学式情報記録再生装置
EP0740307B1 (fr) * 1995-04-28 2001-12-12 STMicroelectronics S.r.l. Circuit amplificateur de détection pour dispositifs de mémoire à semi-conducteurs
US5530403A (en) * 1995-05-03 1996-06-25 Motorola, Inc. Low-voltage differential amplifier
FR2734390B1 (fr) * 1995-05-19 1997-06-13 Sgs Thomson Microelectronics Circuit de detection de courant pour la lecture d'une memoire en circuit integre
JP2800740B2 (ja) * 1995-09-28 1998-09-21 日本電気株式会社 半導体記憶装置

Also Published As

Publication number Publication date
US5889702A (en) 1999-03-30
FR2760888A1 (fr) 1998-09-18

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20071130