IT1244293B - Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini - Google Patents

Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini

Info

Publication number
IT1244293B
IT1244293B IT02087790A IT2087790A IT1244293B IT 1244293 B IT1244293 B IT 1244293B IT 02087790 A IT02087790 A IT 02087790A IT 2087790 A IT2087790 A IT 2087790A IT 1244293 B IT1244293 B IT 1244293B
Authority
IT
Italy
Prior art keywords
cells
reading device
virgin
written
operating field
Prior art date
Application number
IT02087790A
Other languages
English (en)
Other versions
IT9020877A0 (it
IT9020877A1 (it
Inventor
Marco Dallabora
Paolo Rolandi
Marco Maccalli
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT02087790A priority Critical patent/IT1244293B/it
Publication of IT9020877A0 publication Critical patent/IT9020877A0/it
Priority to EP91201641A priority patent/EP0464928B1/en
Priority to DE69126245T priority patent/DE69126245T2/de
Priority to JP16426691A priority patent/JP3184984B2/ja
Priority to US07/725,987 priority patent/US5267202A/en
Publication of IT9020877A1 publication Critical patent/IT9020877A1/it
Application granted granted Critical
Publication of IT1244293B publication Critical patent/IT1244293B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
IT02087790A 1990-07-06 1990-07-06 Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini IT1244293B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT02087790A IT1244293B (it) 1990-07-06 1990-07-06 Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini
EP91201641A EP0464928B1 (en) 1990-07-06 1991-06-27 Reading device for EPROM memory cells with the operational field independent of the threshold jump of the written cells with respect to the virgin cells
DE69126245T DE69126245T2 (de) 1990-07-06 1991-06-27 Leseschaltung für EPROM-Speicherzellen mit einem Betriebsfeld, unabhängig von Schwellpegelsprüngen programmierter Zellen in Beziehung zu nichtprogrammierten Zellen
JP16426691A JP3184984B2 (ja) 1990-07-06 1991-07-04 書き込まれているセルの書き込まれていないセルに対するしきい値のジャンプから独立した動作フィールドを有するｅｐｒｏｍメモリセルのための読み出し装置
US07/725,987 US5267202A (en) 1990-07-06 1991-07-05 Reading device for EPROM memory cells with the operational field independent of the threshold jump of the written cells with respect to the virgin cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02087790A IT1244293B (it) 1990-07-06 1990-07-06 Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini

Publications (3)

Publication Number Publication Date
IT9020877A0 IT9020877A0 (it) 1990-07-06
IT9020877A1 IT9020877A1 (it) 1992-01-06
IT1244293B true IT1244293B (it) 1994-07-08

Family

ID=11173426

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02087790A IT1244293B (it) 1990-07-06 1990-07-06 Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini

Country Status (5)

Country Link
US (1) US5267202A (it)
EP (1) EP0464928B1 (it)
JP (1) JP3184984B2 (it)
DE (1) DE69126245T2 (it)
IT (1) IT1244293B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
DE69426487T2 (de) * 1994-03-28 2001-06-07 Stmicroelectronics S.R.L., Agrate Brianza Verfahren und Schaltung zur Referenzsignalerzeugung zur Differentialauswertung des Inhalts von nichtflüchtigen Speicherzellen
FR2760888B1 (fr) * 1997-03-11 1999-05-07 Sgs Thomson Microelectronics Circuit de lecture pour memoire adapte a la mesure des courants de fuite
US6317362B1 (en) * 1999-07-13 2001-11-13 Sanyo Electric Co., Ltd. Semiconductor memory device
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
IT1319597B1 (it) * 2000-12-20 2003-10-20 St Microelectronics Srl Sistema di lettura di una cella di memoria
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
JP4262227B2 (ja) * 2005-07-22 2009-05-13 シャープ株式会社 半導体記憶装置の読み出し回路
US8773934B2 (en) * 2006-09-27 2014-07-08 Silicon Storage Technology, Inc. Power line compensation for flash memory sense amplifiers
KR20140081027A (ko) * 2012-12-21 2014-07-01 에스케이하이닉스 주식회사 비휘발성 메모리 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1204375B (it) * 1986-06-03 1989-03-01 Sgs Microelettronica Spa Generatore di polarizzazione di sorgenti per transistori naturali in circuiti integrati digitali in tecnologia mos
JPH0814993B2 (ja) * 1989-01-13 1996-02-14 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
US5267202A (en) 1993-11-30
EP0464928A3 (en) 1993-03-31
JP3184984B2 (ja) 2001-07-09
DE69126245T2 (de) 1997-11-06
DE69126245D1 (de) 1997-07-03
EP0464928B1 (en) 1997-05-28
EP0464928A2 (en) 1992-01-08
IT9020877A0 (it) 1990-07-06
IT9020877A1 (it) 1992-01-06
JPH056682A (ja) 1993-01-14

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970730