IT1246241B - Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili - Google Patents

Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili

Info

Publication number
IT1246241B
IT1246241B IT08360790A IT8360790A IT1246241B IT 1246241 B IT1246241 B IT 1246241B IT 08360790 A IT08360790 A IT 08360790A IT 8360790 A IT8360790 A IT 8360790A IT 1246241 B IT1246241 B IT 1246241B
Authority
IT
Italy
Prior art keywords
reading
circuit
volatile memory
memory cells
information contained
Prior art date
Application number
IT08360790A
Other languages
English (en)
Other versions
IT9083607A0 (it
IT9083607A1 (it
Inventor
Luigi Pascucci
Marco Olivo
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT08360790A priority Critical patent/IT1246241B/it
Publication of IT9083607A0 publication Critical patent/IT9083607A0/it
Priority to EP91830036A priority patent/EP0443989B1/en
Priority to DE69115952T priority patent/DE69115952T2/de
Priority to US07/657,083 priority patent/US5218570A/en
Priority to JP5040491A priority patent/JP3145722B2/ja
Publication of IT9083607A1 publication Critical patent/IT9083607A1/it
Application granted granted Critical
Publication of IT1246241B publication Critical patent/IT1246241B/it
Priority to US08/488,718 priority patent/USRE36579E/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
IT08360790A 1990-02-23 1990-02-23 Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili IT1246241B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT08360790A IT1246241B (it) 1990-02-23 1990-02-23 Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
EP91830036A EP0443989B1 (en) 1990-02-23 1991-02-07 Sense circuit for reading data stored in nonvolatile memory cells
DE69115952T DE69115952T2 (de) 1990-02-23 1991-02-07 Abfühlschaltung zum Lesen von in nichtflüchtigen Speicherzellen gespeicherten Daten
US07/657,083 US5218570A (en) 1990-02-23 1991-02-19 Sense circuit for reading data stored in nonvolatile memory cells
JP5040491A JP3145722B2 (ja) 1990-02-23 1991-02-23 フローティングゲート型メモリセル内に記憶されるデータ読み取り用センス回路
US08/488,718 USRE36579E (en) 1990-02-23 1995-06-08 Sense circuit for reading data stored in nonvolatile memory cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT08360790A IT1246241B (it) 1990-02-23 1990-02-23 Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili

Publications (3)

Publication Number Publication Date
IT9083607A0 IT9083607A0 (it) 1990-02-23
IT9083607A1 IT9083607A1 (it) 1991-08-24
IT1246241B true IT1246241B (it) 1994-11-17

Family

ID=11323056

Family Applications (1)

Application Number Title Priority Date Filing Date
IT08360790A IT1246241B (it) 1990-02-23 1990-02-23 Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili

Country Status (5)

Country Link
US (2) US5218570A (it)
EP (1) EP0443989B1 (it)
JP (1) JP3145722B2 (it)
DE (1) DE69115952T2 (it)
IT (1) IT1246241B (it)

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FR2665792B1 (fr) * 1990-08-08 1993-06-11 Sgs Thomson Microelectronics Memoire integree pourvue de moyens de test ameliores.
DE69026946T2 (de) * 1990-11-19 1996-09-05 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen wie nichtflüchtige Speicher mit kompensiertem Offsetstrom
EP0536095B1 (en) * 1991-09-26 1998-01-21 STMicroelectronics S.r.l. Sense amplifier
KR940004406B1 (ko) * 1991-09-27 1994-05-25 현대전자산업 주식회사 Nand형 셀의 감지증폭기
FR2690751B1 (fr) * 1992-04-30 1994-06-17 Sgs Thomson Microelectronics Procede et circuit de detection de fuites de courant dans une ligne de bit.
US5390147A (en) * 1994-03-02 1995-02-14 Atmel Corporation Core organization and sense amplifier having lubricating current, active clamping and buffered sense node for speed enhancement for non-volatile memory
EP0676768B1 (en) * 1994-03-28 2000-12-27 STMicroelectronics S.r.l. Reference signal generating method and circuit for differential evaluation of the content of non-volatile memory cells
JPH08180697A (ja) * 1994-09-16 1996-07-12 Texas Instr Inc <Ti> センス増幅器用の基準電流を供給する基準回路及び方法
US5689471A (en) * 1995-01-24 1997-11-18 Cypress Semiconductor Corp. Dummy cell for providing a reference voltage in a memory array
US5621686A (en) * 1995-06-07 1997-04-15 Intel Corporation Multiply and divide current mirror
US5638322A (en) * 1995-07-19 1997-06-10 Cypress Semiconductor Corp. Apparatus and method for improving common mode noise rejection in pseudo-differential sense amplifiers
US5694366A (en) * 1996-05-01 1997-12-02 Micron Quantum Devices, Inc. OP amp circuit with variable resistance and memory system including same
DE69627152T2 (de) * 1996-09-30 2004-03-04 Stmicroelectronics S.R.L., Agrate Brianza Leseschaltung für Halbleiter-Speicherzellen
US5768287A (en) 1996-10-24 1998-06-16 Micron Quantum Devices, Inc. Apparatus and method for programming multistate memory device
US5771346A (en) 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
US5764568A (en) 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
JP3968818B2 (ja) * 1997-05-26 2007-08-29 富士通株式会社 アンプ
JP3110407B2 (ja) * 1998-12-11 2000-11-20 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
US6567302B2 (en) 1998-12-29 2003-05-20 Micron Technology, Inc. Method and apparatus for programming multi-state cells in a memory device
KR100322471B1 (ko) * 1999-10-01 2002-02-07 윤종용 불휘발성 반도체 메모리 장치의 감지 증폭기 회로
FR2801419B1 (fr) * 1999-11-18 2003-07-25 St Microelectronics Sa Procede et dispositif de lecture pour memoire en circuit integre
US6407946B2 (en) 1999-12-08 2002-06-18 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device
IT1319597B1 (it) * 2000-12-20 2003-10-20 St Microelectronics Srl Sistema di lettura di una cella di memoria
DE10113239C1 (de) * 2001-03-19 2002-08-22 Infineon Technologies Ag Bewerterschaltung zum Auslesen einer in einer Speicherzelle gespeicherten Information
ITMI20011311A1 (it) * 2001-06-21 2002-12-21 St Microelectronics Srl Memoria con sistema di lettura differenziale perfezionato
US6535426B2 (en) * 2001-08-02 2003-03-18 Stmicroelectronics, Inc. Sense amplifier circuit and method for nonvolatile memory devices
ITTO20020798A1 (it) * 2002-09-13 2004-03-14 Atmel Corp Amplificatore di rilevamento a specchio a dinamica rapida
AU2003272370A1 (en) * 2002-09-13 2004-04-30 Atmel Corporation Fast dynamic mirror sense amplifier with separate comparison equalization and evaluation paths
WO2004075200A1 (ja) * 2003-02-19 2004-09-02 Fujitsu Limited メモリ装置
JP2005285197A (ja) 2004-03-29 2005-10-13 Renesas Technology Corp 半導体記憶装置
ITMI20042538A1 (it) * 2004-12-29 2005-03-29 Atmel Corp Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli
US7193898B2 (en) * 2005-06-20 2007-03-20 Sandisk Corporation Compensation currents in non-volatile memory read operations
US7506113B2 (en) * 2006-07-20 2009-03-17 Sandisk Corporation Method for configuring compensation
US7443729B2 (en) 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
US7885119B2 (en) 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
US7400535B2 (en) * 2006-07-20 2008-07-15 Sandisk Corporation System that compensates for coupling during programming
US7495953B2 (en) * 2006-07-20 2009-02-24 Sandisk Corporation System for configuring compensation
US7522454B2 (en) * 2006-07-20 2009-04-21 Sandisk Corporation Compensating for coupling based on sensing a neighbor using coupling
US8773934B2 (en) 2006-09-27 2014-07-08 Silicon Storage Technology, Inc. Power line compensation for flash memory sense amplifiers
US7567462B2 (en) * 2006-11-16 2009-07-28 Micron Technology, Inc. Method and system for selectively limiting peak power consumption during programming or erase of non-volatile memory devices
US7573748B2 (en) * 2007-01-12 2009-08-11 Atmel Corporation Column leakage compensation in a sensing circuit
US8558727B2 (en) * 2011-05-18 2013-10-15 Qualcomm Incorporated Compensated current cell to scale switching glitches in digital to analog convertors

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JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory
US4604732A (en) * 1984-05-29 1986-08-05 Thomson Components-Mostek Corporation Power supply dependent voltage reference circuit
US4661926A (en) * 1984-11-20 1987-04-28 Thomson Components-Mostek Corp. Bit line gain circuit for read only memory
US4649301A (en) * 1985-01-07 1987-03-10 Thomson Components-Mostek Corp. Multiple-input sense amplifier with two CMOS differential stages driving a high-gain stage
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4727519A (en) * 1985-11-25 1988-02-23 Motorola, Inc. Memory device including a clock generator with process tracking
US4670675A (en) * 1986-02-07 1987-06-02 Advanced Micro Devices, Inc. High gain sense amplifier for small current differential
IT1213343B (it) * 1986-09-12 1989-12-20 Sgs Microelettronica Spa Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.
IT1221780B (it) * 1988-01-29 1990-07-12 Sgs Thomson Microelectronics Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos
JPH01220295A (ja) * 1988-02-29 1989-09-01 Nec Corp 半導体記憶装置
JPH0715952B2 (ja) * 1988-04-13 1995-02-22 株式会社東芝 半導体記憶装置
DE68926124T2 (de) * 1988-06-24 1996-09-19 Toshiba Kawasaki Kk Halbleiterspeicheranordnung
KR0137768B1 (ko) * 1988-11-23 1998-06-01 존 지. 웨브 단일 트랜지스터 메모리 셀과 함께 사용하는 고속 자동 센스 증폭기
JPH0814993B2 (ja) * 1989-01-13 1996-02-14 株式会社東芝 半導体記憶装置
JPH0346197A (ja) * 1989-07-13 1991-02-27 Fujitsu Ltd 半導体記憶装置
JP2647527B2 (ja) * 1990-02-21 1997-08-27 シャープ株式会社 センス増幅回路
IT1244293B (it) * 1990-07-06 1994-07-08 Sgs Thomson Microelectronics Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini
DE69026946T2 (de) * 1990-11-19 1996-09-05 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen wie nichtflüchtige Speicher mit kompensiertem Offsetstrom
DE69026828T2 (de) * 1990-12-13 1996-10-02 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung

Also Published As

Publication number Publication date
EP0443989B1 (en) 1996-01-03
USRE36579E (en) 2000-02-22
JP3145722B2 (ja) 2001-03-12
DE69115952D1 (de) 1996-02-15
EP0443989A3 (en) 1992-01-02
IT9083607A0 (it) 1990-02-23
US5218570A (en) 1993-06-08
DE69115952T2 (de) 1996-09-19
EP0443989A2 (en) 1991-08-28
IT9083607A1 (it) 1991-08-24
JPH04216397A (ja) 1992-08-06

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Legal Events

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0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970227