IT1213343B - Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos. - Google Patents
Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.Info
- Publication number
- IT1213343B IT1213343B IT8621682A IT2168286A IT1213343B IT 1213343 B IT1213343 B IT 1213343B IT 8621682 A IT8621682 A IT 8621682A IT 2168286 A IT2168286 A IT 2168286A IT 1213343 B IT1213343 B IT 1213343B
- Authority
- IT
- Italy
- Prior art keywords
- state
- detection circuit
- matrix cells
- mos technology
- eprom memories
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8621682A IT1213343B (it) | 1986-09-12 | 1986-09-12 | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos. |
DE8787113241T DE3778845D1 (de) | 1986-09-12 | 1987-09-10 | Matrixzellenabtastschaltung fuer mos-eprom-speicher. |
EP87113241A EP0270750B1 (en) | 1986-09-12 | 1987-09-10 | Sense circuit for the state of matrix cells in mos eprom memories |
JP62228226A JPS63133399A (ja) | 1986-09-12 | 1987-09-11 | Mos eprom メモリのマトリックスセルの状態検知回路 |
KR870010097A KR880004488A (ko) | 1986-09-12 | 1987-09-11 | 모스 이피롬 메모리의 매트릭스 셀에 대한 상태 감지회로 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8621682A IT1213343B (it) | 1986-09-12 | 1986-09-12 | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8621682A0 IT8621682A0 (it) | 1986-09-12 |
IT1213343B true IT1213343B (it) | 1989-12-20 |
Family
ID=11185320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8621682A IT1213343B (it) | 1986-09-12 | 1986-09-12 | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0270750B1 (it) |
JP (1) | JPS63133399A (it) |
KR (1) | KR880004488A (it) |
DE (1) | DE3778845D1 (it) |
IT (1) | IT1213343B (it) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1221780B (it) * | 1988-01-29 | 1990-07-12 | Sgs Thomson Microelectronics | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos |
US5040148A (en) * | 1988-06-24 | 1991-08-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device with address transition actuated dummy cell |
US5191552A (en) * | 1988-06-24 | 1993-03-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device with address transition actuated dummy cell |
JPH0713877B2 (ja) * | 1988-10-19 | 1995-02-15 | 株式会社東芝 | 半導体メモリ |
JPH0824000B2 (ja) * | 1989-06-12 | 1996-03-06 | 株式会社東芝 | 半導体メモリ装置 |
JPH0346197A (ja) * | 1989-07-13 | 1991-02-27 | Fujitsu Ltd | 半導体記憶装置 |
IT1246241B (it) * | 1990-02-23 | 1994-11-17 | Sgs Thomson Microelectronics | Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili |
DE69026946T2 (de) * | 1990-11-19 | 1996-09-05 | Sgs Thomson Microelectronics | Verbesserte Abfühlschaltung für Speicheranordnungen wie nichtflüchtige Speicher mit kompensiertem Offsetstrom |
FR2682505B1 (fr) * | 1991-10-11 | 1996-09-27 | Sgs Thomson Microelectronics | Dispositif pour detecter le contenu de cellules au sein d'une memoire, notamment une memoire eprom, procede mis en óoeuvre dans ce dispositif, et memoire munie de ce dispositif. |
US5390147A (en) * | 1994-03-02 | 1995-02-14 | Atmel Corporation | Core organization and sense amplifier having lubricating current, active clamping and buffered sense node for speed enhancement for non-volatile memory |
JP2009129472A (ja) * | 2007-11-20 | 2009-06-11 | Toshiba Corp | 半導体記憶装置 |
JPWO2010082243A1 (ja) * | 2009-01-13 | 2012-06-28 | パナソニック株式会社 | 不揮発性半導体メモリ及びメモリシステム |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4223394A (en) * | 1979-02-13 | 1980-09-16 | Intel Corporation | Sensing amplifier for floating gate memory devices |
JPS5856290A (ja) * | 1981-09-29 | 1983-04-02 | Nec Corp | 記憶装置 |
-
1986
- 1986-09-12 IT IT8621682A patent/IT1213343B/it active
-
1987
- 1987-09-10 DE DE8787113241T patent/DE3778845D1/de not_active Expired - Fee Related
- 1987-09-10 EP EP87113241A patent/EP0270750B1/en not_active Expired - Lifetime
- 1987-09-11 KR KR870010097A patent/KR880004488A/ko not_active Application Discontinuation
- 1987-09-11 JP JP62228226A patent/JPS63133399A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0270750B1 (en) | 1992-05-06 |
EP0270750A2 (en) | 1988-06-15 |
EP0270750A3 (en) | 1990-04-18 |
KR880004488A (ko) | 1988-06-04 |
DE3778845D1 (de) | 1992-06-11 |
IT8621682A0 (it) | 1986-09-12 |
JPS63133399A (ja) | 1988-06-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970929 |