IT1221780B - Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos - Google Patents

Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos

Info

Publication number
IT1221780B
IT1221780B IT19254/88A IT1925488A IT1221780B IT 1221780 B IT1221780 B IT 1221780B IT 19254/88 A IT19254/88 A IT 19254/88A IT 1925488 A IT1925488 A IT 1925488A IT 1221780 B IT1221780 B IT 1221780B
Authority
IT
Italy
Prior art keywords
detection circuit
cell detection
state cell
mos technology
eprom memories
Prior art date
Application number
IT19254/88A
Other languages
English (en)
Other versions
IT8819254A0 (it
Inventor
Campardo Giovanni
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT19254/88A priority Critical patent/IT1221780B/it
Publication of IT8819254A0 publication Critical patent/IT8819254A0/it
Priority to US07/298,487 priority patent/US4949307A/en
Priority to DE89100780T priority patent/DE68909959T2/de
Priority to EP89100780A priority patent/EP0326004B1/en
Priority to JP1937489A priority patent/JP2784023B2/ja
Application granted granted Critical
Publication of IT1221780B publication Critical patent/IT1221780B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
IT19254/88A 1988-01-29 1988-01-29 Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos IT1221780B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT19254/88A IT1221780B (it) 1988-01-29 1988-01-29 Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos
US07/298,487 US4949307A (en) 1988-01-29 1989-01-18 Circuit for sensing the state of matrix cells in MOS EPROM memories including an offset current generator
DE89100780T DE68909959T2 (de) 1988-01-29 1989-01-18 Schaltung zum Abfühlen des Zustandes von Matrixzellen in MOS-EPROM-Speichern.
EP89100780A EP0326004B1 (en) 1988-01-29 1989-01-18 Circuit for sensing the state of matrix cells in MOS EPROM memories
JP1937489A JP2784023B2 (ja) 1988-01-29 1989-01-27 Ｍｏｓ・ｅｐ ｒｏｍメモリにおけるマトリックスセルの状態を検知するための回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19254/88A IT1221780B (it) 1988-01-29 1988-01-29 Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos

Publications (2)

Publication Number Publication Date
IT8819254A0 IT8819254A0 (it) 1988-01-29
IT1221780B true IT1221780B (it) 1990-07-12

Family

ID=11156153

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19254/88A IT1221780B (it) 1988-01-29 1988-01-29 Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos

Country Status (5)

Country Link
US (1) US4949307A (it)
EP (1) EP0326004B1 (it)
JP (1) JP2784023B2 (it)
DE (1) DE68909959T2 (it)
IT (1) IT1221780B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793033B2 (ja) * 1989-08-24 1995-10-09 日本電気株式会社 センスアンプ
JP2558904B2 (ja) * 1990-01-19 1996-11-27 株式会社東芝 半導体集積回路
JPH03241594A (ja) * 1990-02-19 1991-10-28 Fujitsu Ltd 半導体メモリのセンス回路
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
FR2665792B1 (fr) * 1990-08-08 1993-06-11 Sgs Thomson Microelectronics Memoire integree pourvue de moyens de test ameliores.
DE69026946T2 (de) * 1990-11-19 1996-09-05 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen wie nichtflüchtige Speicher mit kompensiertem Offsetstrom
DE69026828T2 (de) * 1990-12-13 1996-10-02 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung
DE69224125T2 (de) * 1991-09-26 1998-08-27 St Microelectronics Srl Leseverstärker
US5487045A (en) * 1994-09-16 1996-01-23 Philips Electroics North America Corporation Sense amplifier having variable sensing load for non-volatile memory
DE69629668T2 (de) * 1996-06-18 2004-07-08 Stmicroelectronics S.R.L., Agrate Brianza Verfahren und Schaltung zum Erzeugen eines Lesereferenzsignals für nichtflüchtige Speicherzellen
US5805500A (en) * 1997-06-18 1998-09-08 Sgs-Thomson Microelectronics S.R.L. Circuit and method for generating a read reference signal for nonvolatile memory cells
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
ITMI20011311A1 (it) * 2001-06-21 2002-12-21 St Microelectronics Srl Memoria con sistema di lettura differenziale perfezionato
US7237074B2 (en) 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173300A (ja) * 1984-09-17 1986-04-15 Toshiba Corp 半導体記憶装置
IT1221018B (it) * 1985-03-28 1990-06-21 Giulio Casagrande Dispositivo per verificare celle di memoria in funzione del salto di soglia ottenibile in fase di scrittura
IT1213343B (it) * 1986-09-12 1989-12-20 Sgs Microelettronica Spa Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.
IT1214246B (it) * 1987-05-27 1990-01-10 Sgs Microelettronica Spa Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.

Also Published As

Publication number Publication date
US4949307A (en) 1990-08-14
EP0326004A2 (en) 1989-08-02
JPH029095A (ja) 1990-01-12
DE68909959T2 (de) 1994-05-05
IT8819254A0 (it) 1988-01-29
JP2784023B2 (ja) 1998-08-06
EP0326004B1 (en) 1993-10-20
DE68909959D1 (de) 1993-11-25
EP0326004A3 (en) 1991-06-12

Similar Documents

Publication Publication Date Title
IT1221780B (it) Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos
DE69121601D1 (de) Festoxidbrennstoffzelle
DE69414943D1 (de) Brennstoffzelle mit Festoxidelektrolyt
DE69210350D1 (de) Sonnenzellenmodul mit verbesserten witterungsbeständigen Eigenschaften
IT8423479A0 (it) Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura.
DE69109336D1 (de) Festoxidbrennstoffzelle.
IT1213343B (it) Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.
DE69528329D1 (de) EEPROM-Speicherzelle
DE59307434D1 (de) Zentralsymmetrische Brennstoffzellenbatterie
DE69304792D1 (de) Festoxidbrennstoffzelle
IT1246754B (it) Circuito di lettura di celle eprom
ITTO920177V0 (it) Copertura di tettoed elemento costruttio con celle solari
DE3175509D1 (en) High speed nonvolatile electrically erasable memory cell and system
DE69121735D1 (de) Festoxidbrennstoffzellen
DE69408940D1 (de) Festoxidelektrytbrennstoffzelle
DE69929409D1 (de) Speicherzelle mit kapazitiver Ladung
DE3160505D1 (en) Semi-conductor floating gate memory cell with write and erase electrodes
DE59610015D1 (de) Elektrochemische Messzelle
EP0282137A3 (en) Eprom memory cell with two symmetrical half-cells and separate floating gates
DE69411001D1 (de) Brennstoffzelle mit Festoxidelektrolyt
MX149008A (es) Mejoras en registrador de facturacion con memoria de estado solido no volatil
DE59712601D1 (de) Nichtflüchtige speicherzelle
DE69224695D1 (de) Festoxidbrennstoffzellengenerator
DE69221940D1 (de) Bitleitungsvorladungsschaltung zum Lesen einer EPROM-Speicherzelle
DE69009221D1 (de) MOS-Speicherzelle mit einem exponentiellen Dotierungsprofil und mit versetztem Tunneloxid des schwebenden Gates.

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960129