DE68909959D1 - Schaltung zum Abfühlen des Zustandes von Matrixzellen in MOS-EPROM-Speichern. - Google Patents

Schaltung zum Abfühlen des Zustandes von Matrixzellen in MOS-EPROM-Speichern.

Info

Publication number
DE68909959D1
DE68909959D1 DE89100780T DE68909959T DE68909959D1 DE 68909959 D1 DE68909959 D1 DE 68909959D1 DE 89100780 T DE89100780 T DE 89100780T DE 68909959 T DE68909959 T DE 68909959T DE 68909959 D1 DE68909959 D1 DE 68909959D1
Authority
DE
Germany
Prior art keywords
mos
sensing
circuit
state
matrix cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89100780T
Other languages
English (en)
Other versions
DE68909959T2 (de
Inventor
Giovanni Campardo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE68909959D1 publication Critical patent/DE68909959D1/de
Application granted granted Critical
Publication of DE68909959T2 publication Critical patent/DE68909959T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
DE89100780T 1988-01-29 1989-01-18 Schaltung zum Abfühlen des Zustandes von Matrixzellen in MOS-EPROM-Speichern. Expired - Fee Related DE68909959T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19254/88A IT1221780B (it) 1988-01-29 1988-01-29 Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos

Publications (2)

Publication Number Publication Date
DE68909959D1 true DE68909959D1 (de) 1993-11-25
DE68909959T2 DE68909959T2 (de) 1994-05-05

Family

ID=11156153

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89100780T Expired - Fee Related DE68909959T2 (de) 1988-01-29 1989-01-18 Schaltung zum Abfühlen des Zustandes von Matrixzellen in MOS-EPROM-Speichern.

Country Status (5)

Country Link
US (1) US4949307A (de)
EP (1) EP0326004B1 (de)
JP (1) JP2784023B2 (de)
DE (1) DE68909959T2 (de)
IT (1) IT1221780B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793033B2 (ja) * 1989-08-24 1995-10-09 日本電気株式会社 センスアンプ
JP2558904B2 (ja) * 1990-01-19 1996-11-27 株式会社東芝 半導体集積回路
JPH03241594A (ja) * 1990-02-19 1991-10-28 Fujitsu Ltd 半導体メモリのセンス回路
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
FR2665792B1 (fr) * 1990-08-08 1993-06-11 Sgs Thomson Microelectronics Memoire integree pourvue de moyens de test ameliores.
DE69026946T2 (de) * 1990-11-19 1996-09-05 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen wie nichtflüchtige Speicher mit kompensiertem Offsetstrom
DE69026828T2 (de) * 1990-12-13 1996-10-02 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung
DE69224125T2 (de) * 1991-09-26 1998-08-27 St Microelectronics Srl Leseverstärker
US5487045A (en) * 1994-09-16 1996-01-23 Philips Electroics North America Corporation Sense amplifier having variable sensing load for non-volatile memory
EP0814482B1 (de) * 1996-06-18 2003-08-27 STMicroelectronics S.r.l. Verfahren und Schaltung zum Erzeugen eines Lesereferenzsignals für nichtflüchtige Speicherzellen
US5805500A (en) * 1997-06-18 1998-09-08 Sgs-Thomson Microelectronics S.R.L. Circuit and method for generating a read reference signal for nonvolatile memory cells
US6538922B1 (en) * 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
ITMI20011311A1 (it) * 2001-06-21 2002-12-21 St Microelectronics Srl Memoria con sistema di lettura differenziale perfezionato
US7237074B2 (en) 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173300A (ja) * 1984-09-17 1986-04-15 Toshiba Corp 半導体記憶装置
IT1221018B (it) * 1985-03-28 1990-06-21 Giulio Casagrande Dispositivo per verificare celle di memoria in funzione del salto di soglia ottenibile in fase di scrittura
IT1213343B (it) * 1986-09-12 1989-12-20 Sgs Microelettronica Spa Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.
IT1214246B (it) * 1987-05-27 1990-01-10 Sgs Microelettronica Spa Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.

Also Published As

Publication number Publication date
EP0326004A3 (de) 1991-06-12
US4949307A (en) 1990-08-14
JP2784023B2 (ja) 1998-08-06
IT1221780B (it) 1990-07-12
EP0326004B1 (de) 1993-10-20
EP0326004A2 (de) 1989-08-02
IT8819254A0 (it) 1988-01-29
JPH029095A (ja) 1990-01-12
DE68909959T2 (de) 1994-05-05

Similar Documents

Publication Publication Date Title
DE68920699D1 (de) Speicherzelle und Leseschaltung.
DE3885408D1 (de) Nichtflüchtige Speicherzelle.
DE3886114D1 (de) Halbleiterspeichergerät mit redundanter Speicherzellenmatrix.
DE59010020D1 (de) Statische Speicherzelle
DE58905297D1 (de) Einrichtung zum lagern.
DE68922941T2 (de) Bedingungsschreib-RAM.
DE68909959T2 (de) Schaltung zum Abfühlen des Zustandes von Matrixzellen in MOS-EPROM-Speichern.
KR900700449A (ko) 세포 분화의 유발에 유효한 화합물
DE3763472D1 (de) Gehaeuse zum einsetzen in schalttafeln.
DE3852131D1 (de) Speicherkarte.
DE3767729D1 (de) Assoziativspeicherzelle.
DE68919402T2 (de) Speicherkarte.
DE68915196D1 (de) Nichtflüchtige RAM-Zelle.
NL193547B (nl) Halfgeleider-geheugenmatrix met reservegeheugenelementen.
DE69129404T2 (de) Speicherzelleschaltung und Matrix
NO875479L (no) Fremgangsmaate for setting av elektroder i elektrolyseceller.
NL192066B (nl) Niet-vluchtige halfgeleidergeheugencel.
DE68906191D1 (de) Kolonnenpackung mit profilierung zum zurueckhalten von fluessigkeit.
DE3854005D1 (de) Speicherzelle.
DE3853182D1 (de) Speicherzelle mit gesättigtem schnellem Schreiben.
DE3850048D1 (de) Speicherzellenzugriff.
DE3887180T2 (de) Halbleiter-Speichereinrichtung mit Schutzzellen.
DE68915211D1 (de) Standardzelle.
DE3775379D1 (de) Nichtfluechtige speicherzellenanordnung.
NO893644D0 (no) Elektrolysecelle.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee